Inventor · disambiguated record
Sven Lanzerstorfer
Also filed as: LANZERSTORFER SVEN · LANZERSTORFER SVEN GUSTAV
11 granted patents·3 pending applications·48 citations·filing 2001–2025
85Inventor score
Files withINFINEON TECHNOLOGIES AG6INFINEON TECHNOLOGIES AUSTRIA2KRISCHKE NORBERT2DETZEL THOMAS1INFINEON TECHNOLOGIES AUSTRIA AG1
Top patents by PatentIndex Score
14 records- 0188US8502274B1Integrated circuit including power transistor cells and a connecting lineMATOY KURT·Filed 2012·Granted Aug 6, 2013·18 cites·25 claims
- 0282US8120135B2TransistorKRISCHKE NORBERT·Filed 2010·Granted Feb 21, 2012·12 cites·23 claims
- 0371US9837530B2Semiconductor device and method of manufacturing the sameINFINEON TECHNOLOGIES AG·Filed 2015·Granted Dec 5, 2017·2 cites·21 claims
- 0468US6605841B2Method for producing an electrode by means of a field effect controllable semiconductor component and field-effect-controllable semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2001·Granted Aug 12, 2003·16 cites·10 claims
- 0552US10446469B2Semiconductor device having a copper element and method of forming a semiconductor device having a copper elementINFINEON TECHNOLOGIES AG·Filed 2016·Granted Oct 15, 2019·0 cites·15 claims
- 0651US2025234532A1One-time programmable cell and related methodsINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 0746US11276624B2Semiconductor device power metallization layer with stress-relieving heat sink structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Mar 15, 2022·0 cites·13 claims
- 0842US9418937B2Integrated circuit and method of forming an integrated circuitDETZEL THOMAS·Filed 2011·Granted Aug 16, 2016·0 cites·17 claims
- 0942US7535055B2Trench transistorINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted May 19, 2009·0 cites·13 claims
- 1039US9590094B2Semiconductor device with power transistor cells and lateral transistors and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2015·Granted Mar 7, 2017·0 cites·10 claims
- 1138US7419883B2Method for fabricating a semiconductor structure having selective dopant regionsINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted Sep 2, 2008·0 cites·20 claims
- 1235US9570441B2Semiconductor device with thermally grown oxide layer between field and gate electrode and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2015·Granted Feb 14, 2017·0 cites·15 claims
- 1334US2005275025A1Semiconductor component and method for its productionLANZERSTORFER SVEN·Filed 2005·Application pending·0 cites
- 1429US2005270869A1TransistorKRISCHKE NORBERT·Filed 2005·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →