Inventor · disambiguated record
Olaf Heitzsch
Also filed as: HEITZSCH OLAF
8 granted patents·1 pending application·56 citations·filing 1998–2019
83Inventor score
Top patents by PatentIndex Score
9 records- 0175US6337255B1Method for forming a trench structure in a silicon substrateINFINEON TECHNOLOGIES AG·Filed 2000·Granted Jan 8, 2002·25 cites·10 claims
- 0270US7795105B2Method for producing an integrated circuit assembly with an auxiliary indentation, particularly with aligning marks, and an integrated circuit arrangementINFINEON TECHNOLOGIES AG·Filed 2006·Granted Sep 14, 2010·5 cites·27 claims
- 0355US6447372B1Polishing agent for semiconductor substratesINFINEON TECHNOLOGIES AG·Filed 2000·Granted Sep 10, 2002·4 cites·8 claims
- 0451US6459296B2Method, system and method of using a component for setting the electrical characteristics of microelectronic circuit configurationsINFINEON TECHNOLOGIES AG·Filed 2001·Granted Oct 1, 2002·8 cites·13 claims
- 0547US6014218ADevice and method for end-point monitoring used in the polishing of components, in particular semiconductor componentsSIEMENS AG·Filed 1998·Granted Jan 11, 2000·14 cites·22 claims
- 0646US11276624B2Semiconductor device power metallization layer with stress-relieving heat sink structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Mar 15, 2022·0 cites·13 claims
- 0738US8901737B2Integrated circuit arrangement with an auxiliary indentation, particularly with aligning marksGOLLER KLAUS·Filed 2010·Granted Dec 2, 2014·0 cites·8 claims
- 0834US2002072301A1Apparatus and method for detecting a work piece in an automatic processing apparatusFiled 2001·Application pending·0 cites
- 0930US6645812B2Method for fabricating a non-volatile semiconductor memory cell with a separate tunnel windowINFINEON TECHNOLOGIES AG·Filed 2001·Granted Nov 11, 2003·0 cites·10 claims
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