Inventor · disambiguated record
Michael Nelhiebel
Also filed as: NELHIEBEL MICHAEL
18 granted patents·1 pending application·22 citations·filing 2011–2023
88Inventor score
Top patents by PatentIndex Score
19 records- 0188US8502274B1Integrated circuit including power transistor cells and a connecting lineMATOY KURT·Filed 2012·Granted Aug 6, 2013·18 cites·25 claims
- 0282US10304782B2Compressive interlayer having a defined crack-stop edge extensionINFINEON TECHNOLOGIES AG·Filed 2017·Granted May 28, 2019·4 cites·28 claims
- 0365US12292469B2Current measuring circuitINFINEON TECHNOLOGIES AG·Filed 2022·Granted May 6, 2025·0 cites·20 claims
- 0457US11171049B2Semiconductor device and a method of forming the semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Nov 9, 2021·0 cites·19 claims
- 0557US10978395B2Method of manufacturing a semiconductor device having a power metallization structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Apr 13, 2021·0 cites·18 claims
- 0654US10396067B2Semiconductor device having a load current component and a sensor componentINFINEON TECHNOLOGIES AG·Filed 2019·Granted Aug 27, 2019·0 cites·14 claims
- 0753US10700019B2Semiconductor device with compressive interlayerINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jun 30, 2020·0 cites·27 claims
- 0852US10446469B2Semiconductor device having a copper element and method of forming a semiconductor device having a copper elementINFINEON TECHNOLOGIES AG·Filed 2016·Granted Oct 15, 2019·0 cites·15 claims
- 0951US11443990B2Prognostic health management for power devicesINFINEON TECHNOLOGIES AG·Filed 2020·Granted Sep 13, 2022·0 cites·17 claims
- 1051US10734320B2Power metallization structure for semiconductor devicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Aug 4, 2020·0 cites·18 claims
- 1150US2025022681A1Scanning electron microscopy-based sample analysisINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
- 1249US10332793B2Self-organizing barrier layer disposed between a metallization layer and a semiconductor regionINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Jun 25, 2019·0 cites·17 claims
- 1346US11276624B2Semiconductor device power metallization layer with stress-relieving heat sink structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Mar 15, 2022·0 cites·13 claims
- 1446US10249612B2Semiconductor device including self-protecting current sensorINFINEON TECHNOLOGIES AG·Filed 2015·Granted Apr 2, 2019·0 cites·10 claims
- 1544US9523729B2Apparatus and method for testing electric conductorsINFINEON TECHNOLOGIES AG·Filed 2013·Granted Dec 20, 2016·0 cites·15 claims
- 1643US11127693B2Barrier for power metallization in semiconductor devicesINFINEON TECHNOLOGIES AG·Filed 2019·Granted Sep 21, 2021·0 cites·20 claims
- 1742US9418937B2Integrated circuit and method of forming an integrated circuitDETZEL THOMAS·Filed 2011·Granted Aug 16, 2016·0 cites·17 claims
- 1840US10937720B2Semiconductor device with copper structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Mar 2, 2021·0 cites·17 claims
- 1940US9812376B2Electrically conductive element, power semiconductor device having an electrically conductive element and method of manufacturing a power semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2015·Granted Nov 7, 2017·0 cites·14 claims
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