Inventor · disambiguated record
Russell Carlton Mcmullan
Also filed as: MCMULLAN RUSSELL · MCMULLAN RUSSELL C · MCMULLAN RUSSELL CARLTON
14 granted patents·64 citations·filing 2009–2017
89Inventor score
Top patents by PatentIndex Score
14 records- 0195US9385140B1Efficient buried oxide layer interconnect schemeTEXAS INSTRUMENTS INC·Filed 2015·Granted Jul 5, 2016·19 cites·20 claims
- 0294US9741724B2SRAM well-tie with an uninterrupted grated first poly and first contact patterns in a bit cell arrayTEXAS INSTRUMENTS INC·Filed 2015·Granted Aug 22, 2017·26 cites·16 claims
- 0378US8871587B2Complementary stress memorization technique layer methodMCMULLAN RUSSELL CARLTON·Filed 2009·Granted Oct 28, 2014·6 cites·9 claims
- 0477US10461075B2Embedded tungsten resistorTEXAS INSTRUMENTS INC·Filed 2015·Granted Oct 29, 2019·2 cites·22 claims
- 0576US9184226B2Embedded tungsten resistorMCMULLAN RUSSELL CARLTON·Filed 2012·Granted Nov 10, 2015·4 cites·10 claims
- 0672US8962419B2Complementary stress memorization technique layer methodTEXAS INSTRUMENTS INC·Filed 2014·Granted Feb 24, 2015·2 cites·10 claims
- 0763US9209195B2SRAM well-tie with an uninterrupted grated first poly and first contact patterns in a bit cell arrayTEXAS INSTRUMENTS INC·Filed 2013·Granted Dec 8, 2015·1 cites·10 claims
- 0860US8379435B2Smart well assisted SRAM read and writeTEXAS INSTRUMENTS INC·Filed 2009·Granted Feb 19, 2013·4 cites·4 claims
- 0952US9985018B2Embedded tungsten resistorTEXAS INSTRUMENTS INC·Filed 2015·Granted May 29, 2018·0 cites·23 claims
- 1052US9966373B2MOS transistor structure and method of forming the structure with vertically and horizontally-elongated metal contactsTEXAS INSTRUMENTS INC·Filed 2017·Granted May 8, 2018·0 cites·17 claims
- 1150US9589983B2Efficient buried oxide layer interconnect schemeTEXAS INSTRUMENTS INC·Filed 2016·Granted Mar 7, 2017·0 cites·20 claims
- 1249US9093315B2CMOS process to improve SRAM yieldTEXAS INSTRUMENTS INC·Filed 2013·Granted Jul 28, 2015·0 cites·2 claims
- 1348US9583609B2MOS transistor structure and method of forming the structure with vertically and horizontally-elongated metal contactsTEXAS INSTRUMENTS INC·Filed 2013·Granted Feb 28, 2017·0 cites·17 claims
- 1443US8603875B2CMOS process to improve SRAM yieldYU SHAOFENG·Filed 2011·Granted Dec 10, 2013·0 cites·18 claims
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