Inventor · disambiguated record
Kenichi Tokano
Also filed as: TOKANO KENICHI
13 granted patents·266 citations·filing 2001–2011
92Inventor score
Top patents by PatentIndex Score
13 records- 0198US6750508B2Power semiconductor switching element provided with buried electrodeTOSHIBA KK·Filed 2001·Granted Jun 15, 2004·190 cites·11 claims
- 0289US7595530B2Power semiconductor device with epitaxially-filled trenchesTOSHIBA KK·Filed 2006·Granted Sep 29, 2009·12 cites·8 claims
- 0385US7531871B2Power semiconductor switching elementTOSHIBA KK·Filed 2005·Granted May 12, 2009·8 cites·8 claims
- 0484US7301202B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2005·Granted Nov 27, 2007·11 cites·19 claims
- 0577US7898031B2Semiconductor device with tapered trenches and impurity concentration gradientsTOSHIBA KK·Filed 2010·Granted Mar 1, 2011·3 cites·7 claims
- 0675US7714385B2Semiconductor device and method of fabricating the sameTOSHIBA KK·Filed 2006·Granted May 11, 2010·6 cites·11 claims
- 0773US7067870B2Power semiconductor switching elementTOSHIBA KK·Filed 2004·Granted Jun 27, 2006·12 cites·13 claims
- 0870US7488993B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2005·Granted Feb 10, 2009·5 cites·15 claims
- 0968US7936015B2Semiconductor device having trenches filled with a semiconductor having an impurity concentration gradientTOSHIBA KK·Filed 2009·Granted May 3, 2011·2 cites·7 claims
- 1063US7423315B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2005·Granted Sep 9, 2008·3 cites·20 claims
- 1161US7075149B2Semiconductor device and its manufacturing methodTOSHIBA KK·Filed 2004·Granted Jul 11, 2006·10 cites·18 claims
- 1250US7391077B2Vertical type semiconductor deviceTOSHIBA KK·Filed 2004·Granted Jun 24, 2008·4 cites·8 claims
- 1344US8431992B2Semiconductor device including first and second semiconductor regions with increasing impurity concentrations from a substrate surfaceTOKANO KENICHI·Filed 2011·Granted Apr 30, 2013·0 cites·6 claims
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