Inventor · disambiguated record
Hiroaki Honjo
Also filed as: HONJO HIROAKI
32 granted patents·2 pending applications·208 citations·filing 1995–2020
96Inventor score
Top patents by PatentIndex Score
34 records- 0195US6466416B1Magnetic head, method for making the same and magnetic recording/reproducing device using the sameNEC CORP·Filed 2000·Granted Oct 15, 2002·67 cites·15 claims
- 0290US7042319B2Thin film electromagnet and switching device comprising itDENSO CORP·Filed 2002·Granted May 9, 2006·36 cites·31 claims
- 0382US6903908B2Magnetoresistive effect sensor with barrier layer smoothed by composition of lower shield layerNEC CORP·Filed 2001·Granted Jun 7, 2005·16 cites·7 claims
- 0482US6791794B2Magnetic head having an antistripping layer for preventing a magnetic layer from strippingNEC CORP·Filed 2002·Granted Sep 14, 2004·14 cites·23 claims
- 0580US6718621B1Magnetoresistive head production methodNEC CORP·Filed 2000·Granted Apr 13, 2004·15 cites·12 claims
- 0678US10164174B2Magnetoresistance effect element and magnetic memoryUNIV TOHOKU·Filed 2018·Granted Dec 25, 2018·1 cites·25 claims
- 0775US11770981B2Magnetoresistive element and magnetic memoryUNIV TOHOKU·Filed 2019·Granted Sep 26, 2023·1 cites·12 claims
- 0875US6687082B1Magnetic head and manufacturing method thereof and magnetic recording and reproducing apparatusNEC CORP·Filed 2000·Granted Feb 3, 2004·11 cites·1 claims
- 0972US10749107B2Method of manufacturing magnetic tunnel coupling elementUNIV TOHOKU·Filed 2017·Granted Aug 18, 2020·1 cites·5 claims
- 1072US7023659B2Magnetic head having an antistripping layer for preventing a magnetic layer from strippingNEC CORP·Filed 2004·Granted Apr 4, 2006·6 cites·31 claims
- 1167US11081641B2Magnetoresistance effect element, magnetic memory, and method for manufacturing magnetoresistance effect elementUNIV TOHOKU·Filed 2017·Granted Aug 3, 2021·1 cites·23 claims
- 1267US6493195B1Magnetoresistance element, with lower electrode anti-erosion/flaking layerNEC CORP·Filed 2000·Granted Dec 10, 2002·13 cites·16 claims
- 1365US11563169B2Magnetic tunnel junction element and magnetic memoryUNIV TOHOKU·Filed 2016·Granted Jan 24, 2023·2 cites·11 claims
- 1465US10658572B2Magnetoresistance effect element and magnetic memoryUNIV TOHOKU·Filed 2018·Granted May 19, 2020·0 cites·14 claims
- 1565US10586580B2Magnetic tunnel junction element and magnetic memoryUNIV TOHOKU·Filed 2017·Granted Mar 10, 2020·2 cites·8 claims
- 1664US6592811B1Magnetic material having a high saturation magnetic flux density and a low coercive forceNEC CORP·Filed 2000·Granted Jul 15, 2003·3 cites·2 claims
- 1761US11121310B2Spin electronics element and method of manufacturing thereofUNIV TOHOKU·Filed 2019·Granted Sep 14, 2021·0 cites·16 claims
- 1861US10424725B2Spintronics elementUNIV TOHOKU·Filed 2018·Granted Sep 24, 2019·0 cites·11 claims
- 1960US6780530B2Magnetic material having a high saturation magnetic flux density and a low coercive forceNEC CORP·Filed 2003·Granted Aug 24, 2004·2 cites·6 claims
- 2056US11258006B2Magnetic memory element, method for producing same, and magnetic memoryUNIV TOHOKU·Filed 2020·Granted Feb 22, 2022·0 cites·16 claims
- 2156US7173793B2Recording head, recording head manufacturing method, combined head and magnetic recording/reproduction apparatusNEC CORP·Filed 2004·Granted Feb 6, 2007·2 cites·12 claims
- 2256US2006119982A1Magnetic head having an antistripping layer for preventing a magnetic layer from strippingHONJO HIROAKI·Filed 2006·Application pending·0 cites
- 2355US6795271B2Recording head, recording head manufacturing method, combined head and magnetic recording/reproduction apparatusNEC CORP·Filed 2000·Granted Sep 21, 2004·2 cites·6 claims
- 2450US10396274B2Spin electronics element and method of manufacturing thereofUNIV TOHOKU·Filed 2016·Granted Aug 27, 2019·0 cites·15 claims
- 2548US10833256B2Magnetic tunnel junction element and method for manufacturing sameUNIV TOHOKU·Filed 2017·Granted Nov 10, 2020·0 cites·6 claims
- 2647US11264565B2Magnetoresistance effect element and magnetic memoryUNIV TOHOKU·Filed 2020·Granted Mar 1, 2022·0 cites·64 claims
- 2747US7238540B2Magnetic random access memory and method of manufacturing the sameNEC CORP·Filed 2004·Granted Jul 3, 2007·5 cites·13 claims
- 2846US11765981B1Magnetoresistance effect element and magnetic memoryUNIV TOHOKU·Filed 2019·Granted Sep 19, 2023·0 cites·6 claims
- 2944US11963458B2Magnetic tunnel junction device, method for manufacturing magnetic tunnel junction device, and magnetic memoryUNIV TOHOKU·Filed 2019·Granted Apr 16, 2024·0 cites·10 claims
- 3044US11462253B2Magnetoresistance effect element and magnetic memoryUNIV TOHOKU·Filed 2017·Granted Oct 4, 2022·0 cites·21 claims
- 3144US2008008908A1Ferromagnetic Film, Magneto-Resistance Element And Magnetic Random Access MemoryNEC CORP·Filed 2005·Application pending·0 cites
- 3243US10644234B2Method for producing magnetic memory comprising magnetic tunnel junction elementUNIV TOHOKU·Filed 2017·Granted May 5, 2020·0 cites·16 claims
- 3342US12402537B2Magnetoresistance effect element, magnetic memory, and film formation method for said magnetoresistance effect elementUNIV TOHOKU·Filed 2019·Granted Aug 26, 2025·0 cites·8 claims
- 3441US5706152AThin film magnetic head having improved insulation of upper side lead terminalNEC CORP·Filed 1995·Granted Jan 6, 1998·8 cites·4 claims
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