Inventor · disambiguated record
Yoshiro Baba
Also filed as: BABA YOSHIRO
34 granted patents·2 pending applications·1,604 citations·filing 1986–2016
98Inventor score
Top patents by PatentIndex Score
36 records- 0197US5126807AVertical MOS transistor and its production methodTOSHIBA KK·Filed 1991·Granted Jun 30, 1992·193 cites·7 claims
- 0296US5321289AVertical MOSFET having trench covered with multilayer gate filmTOSHIBA KK·Filed 1993·Granted Jun 14, 1994·164 cites·6 claims
- 0394US5242845AMethod of production of vertical MOS transistorTOSHIBA KK·Filed 1992·Granted Sep 7, 1993·121 cites·10 claims
- 0492US5578508AVertical power MOSFET and process of fabricating the sameTOSHIBA KK·Filed 1995·Granted Nov 26, 1996·135 cites·9 claims
- 0592US5282018APower semiconductor device having gate structure in trenchTOSHIBA KK·Filed 1993·Granted Jan 25, 1994·103 cites·11 claims
- 0690US6239464B1Semiconductor gate trench with covered open endsTOSHIBA KK·Filed 1999·Granted May 29, 2001·86 cites·3 claims
- 0790US6060747ASemiconductor deviceTOSHIBA KK·Filed 1998·Granted May 9, 2000·80 cites·17 claims
- 0886US4710794AComposite semiconductor deviceTOSHIBA KK·Filed 1986·Granted Dec 1, 1987·78 cites·6 claims
- 0984US5770514AMethod for manufacturing a vertical transistor having a trench gateTOSHIBA KK·Filed 1997·Granted Jun 23, 1998·59 cites·1 claims
- 1083US6337498B1Semiconductor device having directionally balanced gates and manufacturing methodTOSHIBA KK·Filed 1999·Granted Jan 8, 2002·50 cites·5 claims
- 1182US5086332APlanar semiconductor device having high breakdown voltageTOSHIBA KK·Filed 1989·Granted Feb 4, 1992·60 cites·4 claims
- 1278US5733810AMethod of manufacturing MOS type semiconductor device of vertical structureTOSHIBA KK·Filed 1997·Granted Mar 31, 1998·41 cites·14 claims
- 1376US5610422ASemiconductor device having a buried insulated gateTOSHIBA KK·Filed 1995·Granted Mar 11, 1997·35 cites·5 claims
- 1476US4968932AEvaluation method for semiconductor deviceTOSHIBA KK·Filed 1988·Granted Nov 6, 1990·33 cites·4 claims
- 1575US6524894B1Semiconductor device for use in power-switching device and method of manufacturing the sameTOSHIBA KK·Filed 2001·Granted Feb 25, 2003·23 cites·25 claims
- 1673US5726088AMethod of manufacturing a semiconductor device having a buried insulated gateTOSHIBA KK·Filed 1996·Granted Mar 10, 1998·30 cites·2 claims
- 1772US5250446AMethod of manufacturing a semiconductor device by forming at least three regions of different lifetimes of carriers at different depthsTOSHIBA KK·Filed 1992·Granted Oct 5, 1993·48 cites·4 claims
- 1866US5084408AMethod of making complete dielectric isolation structure in semiconductor integrated circuitTOSHIBA KK·Filed 1990·Granted Jan 28, 1992·36 cites·8 claims
- 1964US6476429B2Semiconductor device with breakdown voltage improved by hetero regionTOSHIBA KK·Filed 2001·Granted Nov 5, 2002·9 cites·20 claims
- 2063US5917228ATrench-type schottky-barrier diodeTOSHIBA KK·Filed 1997·Granted Jun 29, 1999·21 cites·13 claims
- 2162US5126817ADielectrically isolated structure for use in soi-type semiconductor deviceTOSHIBA KK·Filed 1990·Granted Jun 30, 1992·33 cites·7 claims
- 2260US5731637ASemiconductor deviceTOSHIBA KK·Filed 1996·Granted Mar 24, 1998·27 cites·4 claims
- 2357US5589421AMethod of manufacturing annealed filmsTOSHIBA KK·Filed 1994·Granted Dec 31, 1996·27 cites·6 claims
- 2455US5554872ASemiconductor device and method of increasing device breakdown voltage of semiconductor deviceTOSHIBA KK·Filed 1995·Granted Sep 10, 1996·20 cites·19 claims
- 2553US5031021ASemiconductor device with a high breakdown voltageTOSHIBA KK·Filed 1986·Granted Jul 9, 1991·14 cites·3 claims
- 2653US2008242067A1Semiconductor substrate and method of manufacture thereofOGINO MASANOBU·Filed 2008·Application pending·0 cites
- 2750US8058693B2Semiconductor device having switching element and method for fabricating semiconductor device having switching elementENDO KOICHI·Filed 2009·Granted Nov 15, 2011·1 cites·6 claims
- 2850US4780426AMethod for manufacturing high-breakdown voltage semiconductor deviceTOSHIBA KK·Filed 1987·Granted Oct 25, 1988·17 cites·11 claims
- 2949US4984052ABonded substrate of semiconductor elements having a high withstand voltageTOSHIBA KK·Filed 1989·Granted Jan 8, 1991·15 cites·6 claims
- 3044US6010950AMethod of manufacturing semiconductor bonded substrateTOSHIBA KK·Filed 1998·Granted Jan 4, 2000·10 cites·1 claims
- 3144US5864180ASemiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 1998·Granted Jan 26, 1999·11 cites·12 claims
- 3242US2004124445A1Semiconductor substrate and method of manufacture thereofFiled 2003·Application pending·0 cites
- 3340US9966441B2Semiconductor device with two-dimensional electron gasTOSHIBA KK·Filed 2016·Granted May 8, 2018·0 cites·14 claims
- 3440US5877540AEpitaxial-base bipolar transistorTOSHIBA KK·Filed 1996·Granted Mar 2, 1999·7 cites·15 claims
- 3540US5029324ASemiconductor device having a semiconductive protection layerTOSHIBA KK·Filed 1990·Granted Jul 2, 1991·10 cites·6 claims
- 3638US6031276ASemiconductor device and method of manufacturing the same with stable control of lifetime carriersTOSHIBA KK·Filed 1997·Granted Feb 29, 2000·7 cites·5 claims
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