Inventor · disambiguated record
Te-Yuan Wu
Also filed as: WU TE-YUAN
20 granted patents·82 citations·filing 2000–2016
93Inventor score
Top patents by PatentIndex Score
20 records- 0185US7709908B2High-voltage MOS transistor deviceUNITED MICROELECTRONICS CORP·Filed 2007·Granted May 4, 2010·14 cites·26 claims
- 0284US9499399B2Method for forming MEMS structure with an etch stop layer buried within inter-dielectric layerUNITED MICROELECTRONICS CORP·Filed 2013·Granted Nov 22, 2016·4 cites·10 claims
- 0381US8766358B2Semiconductor structure and method for manufacturing the sameLEE CHIU-TE·Filed 2012·Granted Jul 1, 2014·7 cites·17 claims
- 0476US6864124B2Method of forming a fuseUNITED MICROELECTRONICS CORP·Filed 2002·Granted Mar 8, 2005·19 cites·19 claims
- 0574US8921937B2High voltage metal-oxide-semiconductor transistor device and method of fabricating the sameWANG CHIH-CHUNG·Filed 2011·Granted Dec 30, 2014·3 cites·9 claims
- 0667US8492835B1High voltage MOSFET deviceWANG CHIH-CHUNG·Filed 2012·Granted Jul 23, 2013·2 cites·9 claims
- 0766US8981501B2Semiconductor device and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2013·Granted Mar 17, 2015·2 cites·16 claims
- 0865US6251725B1Method of fabricating a DRAM storage node on a semiconductor waferUNITED MICROELECTRONICS CORP·Filed 2000·Granted Jun 26, 2001·14 cites·20 claims
- 0964US8436418B2High-voltage semiconductor device with electrostatic discharge protectionWANG CHIH-CHUNG·Filed 2011·Granted May 7, 2013·2 cites·20 claims
- 1060US9236471B2Semiconductor structure and method for manufacturing the sameUNITED MICROELECTRONICS CORP·Filed 2014·Granted Jan 12, 2016·1 cites·32 claims
- 1160US7301216B2Fuse structureUNITED MICROELECTRONICS CORP·Filed 2004·Granted Nov 27, 2007·7 cites·11 claims
- 1257US7541676B2Fuse-structureUNITED MICROELECTRONICS CORP·Filed 2004·Granted Jun 2, 2009·6 cites·26 claims
- 1356US10927000B2MEMS structure with an etch stop layer buried within inter-dielectric layerUNITED MICROELECTRONICS CORP·Filed 2016·Granted Feb 23, 2021·0 cites·7 claims
- 1455US9034713B2Method of fabricating high voltage metal-oxide-semiconductor transistor deviceUNITED MICROELECTRONICS CORP·Filed 2014·Granted May 19, 2015·0 cites·10 claims
- 1551US8072011B2Semiconductor device and method for operating the sameTANG SUNG-NIEN·Filed 2009·Granted Dec 6, 2011·0 cites·6 claims
- 1646US8742498B2High voltage semiconductor device and fabricating method thereofCHIEN FU-CHUN·Filed 2011·Granted Jun 3, 2014·1 cites·10 claims
- 1744US8179188B2Method for operating semiconductor deviceTANG SUNG-NIEN·Filed 2011·Granted May 15, 2012·0 cites·8 claims
- 1842US9105493B2High voltage metal-oxide-semiconductor transistor device and layout pattern thereofLEE MING-TSUNG·Filed 2012·Granted Aug 11, 2015·0 cites·18 claims
- 1939US8698247B2Semiconductor deviceWANG CHIH-CHUNG·Filed 2011·Granted Apr 15, 2014·0 cites·11 claims
- 2033US8890144B2High voltage semiconductor deviceCHANG PAO-AN·Filed 2012·Granted Nov 18, 2014·0 cites·16 claims
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