Inventor · disambiguated record
Takatoshi Nagoya
Also filed as: NAGOYA TAKATOSHI
13 granted patents·129 citations·filing 1991–2009
90Inventor score
Top patents by PatentIndex Score
13 records- 0185US5156982APattern shift measuring methodSHINETSU HANDOTAI KK·Filed 1992·Granted Oct 20, 1992·53 cites·8 claims
- 0275US5487358AApparatus for growing silicon epitaxial layerSHINETSU HANDOTAI KK·Filed 1995·Granted Jan 30, 1996·27 cites·4 claims
- 0372US5421288AProcess for growing silicon epitaxial layerSHINETSU HANDOTAI KK·Filed 1993·Granted Jun 6, 1995·25 cites·9 claims
- 0460US7189293B2Method of producing annealed wafer and annealed waferSHINETSU HANDOTAI KK·Filed 2002·Granted Mar 13, 2007·7 cites·23 claims
- 0556US7153785B2Method of producing annealed wafer and annealed waferSHINETSU HANDOTAI KK·Filed 2002·Granted Dec 26, 2006·5 cites·9 claims
- 0654US6805743B2Method for manufacturing single-crystal-silicon wafersSHINETSU HANDOTAI KK·Filed 2001·Granted Oct 19, 2004·4 cites·16 claims
- 0752US6841450B2Annealed wafer manufacturing method and annealed waferSHINETSU HANDOTAI KK·Filed 2001·Granted Jan 11, 2005·3 cites·24 claims
- 0847US6670261B2Production method for annealed waferSHINETSU HANDOTAI KK·Filed 2001·Granted Dec 30, 2003·1 cites·2 claims
- 0944US7622312B2Method for evaluating dopant contamination of semiconductor waferSHINETSU HANDOTAI KK·Filed 2006·Granted Nov 24, 2009·0 cites·24 claims
- 1041US7659216B2Method for producing annealed wafer and annealed waferSHINETSU HANDOTAI KK·Filed 2005·Granted Feb 9, 2010·0 cites·12 claims
- 1140US8551246B2Method for evaluating oxide dielectric breakdown voltage of a silicon single crystal waferTAHARA FUMIO·Filed 2009·Granted Oct 8, 2013·0 cites·5 claims
- 1230US5172188APattern shift measuring methodSHINETSU HANDOTAI KK·Filed 1991·Granted Dec 15, 1992·4 cites·5 claims
- 1327US5685905AMethod of manufacturing a single crystal thin filmSHINETSU HANDOTAI KK·Filed 1996·Granted Nov 11, 1997·0 cites·3 claims
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