Inventor · disambiguated record
Qianbing Xu
Also filed as: Xu Qianbing
8 granted patents·2 pending applications·11 citations·filing 2018–2025
78Inventor score
Files withYANGTZE MEMORY TECH CO LTD10
Top patents by PatentIndex Score
10 records- 0192US10658378B2Through array contact (TAC) for three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted May 19, 2020·9 cites·20 claims
- 0287US10937806B2Through array contact (TAC) for three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Mar 2, 2021·2 cites·20 claims
- 0379US12446217B23D NAND memory device and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Oct 14, 2025·0 cites·20 claims
- 0472US11737263B23D NAND memory device and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Aug 22, 2023·0 cites·10 claims
- 0566US2025386508A1Semiconductor device, fabrication method thereof, and memory systemYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 0661US11805643B2Method of fabrication thereof a multi-level vertical memory device including inter-level channel connectorYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Oct 31, 2023·0 cites·20 claims
- 0755US11502094B2Multi-level vertical memory device including inter-level channel connectorYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Nov 15, 2022·0 cites·13 claims
- 0854US2025386506A1Semiconductor device, manufacturing method thereof and memory systemYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 0951US11716843B2Method for forming contact structures in three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Aug 1, 2023·0 cites·22 claims
- 1049US11145667B23D NAND memory device and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Oct 12, 2021·0 cites·20 claims
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