Inventor · disambiguated record
Woong Lee
Also filed as: LEE WOONG · Lee Woong-Seop
34 granted patents·8 pending applications·272 citations·filing 2004–2022
97Inventor score
Top patents by PatentIndex Score
42 records- 0197US9419013B1Semiconductor device and method of manufacturing the sameLEE DONG SIK·Filed 2015·Granted Aug 16, 2016·71 cites·15 claims
- 0297US9076879B2Three-dimensional semiconductor memory device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jul 7, 2015·39 cites·25 claims
- 0394US9659958B2Three-dimensional semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 23, 2017·17 cites·20 claims
- 0494US9536897B2Semiconductor device and method of fabricating the sameYOO DONGCHUL·Filed 2015·Granted Jan 3, 2017·36 cites·19 claims
- 0591US10553609B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Feb 4, 2020·14 cites·20 claims
- 0690US9525065B1Semiconductor devices including a channel pad, and methods of manufacturing semiconductor devices including a channel padKYEON DONG MIN·Filed 2015·Granted Dec 20, 2016·26 cites·16 claims
- 0789US9899411B2Three-dimensional semiconductor memory device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Feb 20, 2018·5 cites·17 claims
- 0887US9379134B2Semiconductor memory devices having increased distance between gate electrodes and epitaxial patterns and methods of fabricating the sameLEE JOONSUK·Filed 2015·Granted Jun 28, 2016·9 cites·20 claims
- 0985US9064736B2Method of manufacturing three dimensional semiconductor memory deviceLEE JOON-SUK·Filed 2014·Granted Jun 23, 2015·12 cites·20 claims
- 1083US9893082B2Semiconductor memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 13, 2018·4 cites·15 claims
- 1182US9559111B2Three-dimensional semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jan 31, 2017·3 cites·13 claims
- 1280US7410869B2Method of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 12, 2008·7 cites·14 claims
- 1379US10128263B2Memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 13, 2018·2 cites·20 claims
- 1475US8008214B2Method of forming an insulation structure and method of manufacturing a semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 30, 2011·4 cites·14 claims
- 1571US7736963B2Method of forming a gate structure for a semiconductor device and method of forming a cell gate structure for a non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 15, 2010·5 cites·17 claims
- 1669US9704878B2Nonvolatile memory devices and methods of forming sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 11, 2017·1 cites·21 claims
- 1768US9653472B2Semiconductor device, method of fabricating the semiconductor device, and method of forming epitaxial layerLEE WOONG·Filed 2015·Granted May 16, 2017·2 cites·20 claims
- 1868US7902059B2Methods of forming void-free layers in openings of semiconductor substratesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Mar 8, 2011·3 cites·23 claims
- 1968US7521375B2Method of forming an oxinitride layerSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 21, 2009·2 cites·23 claims
- 2067US10128266B2Three-dimensional semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Nov 13, 2018·1 cites·20 claims
- 2167US9711531B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 18, 2017·1 cites·19 claims
- 2264US7189661B2Method of forming silicon oxynitride layer in semiconductor device and apparatus of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 13, 2007·2 cites·14 claims
- 2363US11903206B2Three-dimensional semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Feb 13, 2024·0 cites·20 claims
- 2462US10868038B2Memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Dec 15, 2020·0 cites·17 claims
- 2561US7855117B2Method of forming a thin layer and method of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 21, 2010·2 cites·18 claims
- 2660US10373975B2Memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Aug 6, 2019·0 cites·15 claims
- 2755US11342351B2Three-dimensional semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted May 24, 2022·0 cites·19 claims
- 2852US10153295B2Nonvolatile memory devices and methods of forming sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Dec 11, 2018·0 cites·17 claims
- 2952US7459364B2Methods of forming self-aligned floating gates using multi-etchingSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 2, 2008·4 cites·14 claims
- 3048US8481387B2Method of forming an insulation structure and method of manufacturing a semiconductor device using the sameJEE JUNG-GEUN·Filed 2011·Granted Jul 9, 2013·0 cites·4 claims
- 3146US7629217B2Methods of forming void-free layers in openings of semiconductor substratesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 8, 2009·0 cites·25 claims
- 3246US7160776B2Methods of forming a gate structure of a non-volatile memory device and apparatus for performing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 9, 2007·0 cites·18 claims
- 3344US7297620B2Method of forming an oxide layer including increasing the temperature during oxidationSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 20, 2007·0 cites·24 claims
- 3443US2008044981A1Trench Isolation Methods, Methods of Forming Gate Structures Using the Trench Isolation Methods and Methods of Fabricating Non-Volatile Memory Devices Using the Trench Isolation MethodsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3543US2008014753A1Method of Manufacturing a Semiconductor Device Using a Radical Oxidation ProcessJANG WON-JUN·Filed 2007·Application pending·0 cites
- 3641US2006134925A1Method of forming a gate insulating layer of a semiconductor device using deuterium gasLEE JAI-DONG·Filed 2005·Application pending·0 cites
- 3740US2008014729A1Method of manufacturing a memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3839US8431983B2Non-volatile memory device and method of fabricating the sameLEE WOONG·Filed 2009·Granted Apr 30, 2013·0 cites·9 claims
- 3939US2005266640A1Method of forming a dielectric layer and method of manufacturing a nonvolatile memory device using the sameYOU YOUNG-SUB·Filed 2005·Application pending·0 cites
- 4039US2015145020A1Semiconductor device and method of fabricating the sameKIM CHAEHO·Filed 2014·Application pending·0 cites
- 4138US2005153513A1Method of forming a dielectric layer for a non-volatile memory cell and method of forming a non-volatile memory cell having the dielectric layerFiled 2004·Application pending·0 cites
- 4236US2012156848A1Method of manufacturing non-volatile memory device and contact plugs of semiconductor deviceYANG SANG-RYOL·Filed 2011·Application pending·0 cites
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