Inventor · disambiguated record
Hsing-Huang Tseng
Also filed as: TSENG HSING H · TSENG HSING-HUANG · TSENG HSING-SAN
30 granted patents·6 pending applications·2,117 citations·filing 1992–2005
98Inventor score
Top patents by PatentIndex Score
36 records- 0198US6063698AMethod for manufacturing a high dielectric constant gate oxide for use in semiconductor integrated circuitsMOTOROLA INC·Filed 1997·Granted May 16, 2000·231 cites·20 claims
- 0296US5972804AProcess for forming a semiconductor deviceMOTOROLA INC·Filed 1997·Granted Oct 26, 1999·181 cites·15 claims
- 0396US5960289AMethod for making a dual-thickness gate oxide layer using a nitride/oxide composite regionMOTOROLA INC·Filed 1998·Granted Sep 28, 1999·251 cites·20 claims
- 0495US5552332AProcess for fabricating a MOSFET device having reduced reverse short channel effectsMOTOROLA INC·Filed 1995·Granted Sep 3, 1996·160 cites·19 claims
- 0595US5464792AProcess to incorporate nitrogen at an interface of a dielectric layer in a semiconductor deviceMOTOROLA INC·Filed 1994·Granted Nov 7, 1995·122 cites·19 claims
- 0692US6902969B2Process for forming dual metal gate structuresFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Jun 7, 2005·78 cites·24 claims
- 0791US6787421B2Method for forming a dual gate oxide device using a metal oxide and resulting deviceFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Sep 7, 2004·59 cites·19 claims
- 0891US5726087AMethod of formation of semiconductor gate dielectricMOTOROLA INC·Filed 1994·Granted Mar 10, 1998·89 cites·14 claims
- 0991US5712208AMethods of formation of semiconductor composite gate dielectric having multiple incorporated atomic dopantsMOTOROLA INC·Filed 1995·Granted Jan 27, 1998·95 cites·19 claims
- 1090US7144825B2Multi-layer dielectric containing diffusion barrier materialFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Dec 5, 2006·55 cites·18 claims
- 1190US7015153B1Method for forming a layer using a purging gas in a semiconductor processFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Mar 21, 2006·56 cites·19 claims
- 1290US5387540AMethod of forming trench isolation structure in an integrated circuitMOTOROLA INC·Filed 1993·Granted Feb 7, 1995·105 cites·39 claims
- 1390US5371026AMethod for fabricating paired MOS transistors having a current-gain differentialMOTOROLA INC·Filed 1992·Granted Dec 6, 1994·85 cites·9 claims
- 1489US6717226B2Transistor with layered high-K gate dielectric and method thereforMOTOROLA INC·Filed 2002·Granted Apr 6, 2004·52 cites·7 claims
- 1588US5571734AMethod for forming a fluorinated nitrogen containing dielectricMOTOROLA INC·Filed 1994·Granted Nov 5, 1996·71 cites·19 claims
- 1685US6297173B1Process for forming a semiconductor deviceMOTOROLA INC·Filed 1999·Granted Oct 2, 2001·52 cites·21 claims
- 1783US7402472B2Method of making a nitrided gate dielectricFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jul 22, 2008·9 cites·11 claims
- 1882US7235502B2Transitional dielectric layer to improve reliability and performance of high dielectric constant transistorsFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jun 26, 2007·8 cites·12 claims
- 1982US6686282B1Plated metal transistor gate and method of formationMOTOROLA INC·Filed 2003·Granted Feb 3, 2004·30 cites·30 claims
- 2082US5580815AProcess for forming field isolation and a structure over a semiconductor substrateMOTOROLA INC·Filed 1994·Granted Dec 3, 1996·74 cites·29 claims
- 2182US5436488ATrench isolator structure in an integrated circuitMOTOROLA INC·Filed 1994·Granted Jul 25, 1995·60 cites·24 claims
- 2278US6884685B2Radical oxidation and/or nitridation during metal oxide layer deposition processFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Apr 26, 2005·22 cites·21 claims
- 2377US6146948AMethod for manufacturing a thin oxide for use in semiconductor integrated circuitsMOTOROLA INC·Filed 1997·Granted Nov 14, 2000·42 cites·30 claims
- 2477US5731238AIntegrated circuit having a jet vapor deposition silicon nitride film and method of making the sameMOTOROLA INC·Filed 1996·Granted Mar 24, 1998·52 cites·22 claims
- 2571US7214590B2Method of forming an electronic deviceFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted May 8, 2007·5 cites·20 claims
- 2666US5830802AProcess for reducing halogen concentration in a material layer during semiconductor device fabricationMOTOROLA INC·Filed 1995·Granted Nov 3, 1998·32 cites·17 claims
- 2759US5707889AProcess for forming field isolationMOTOROLA INC·Filed 1996·Granted Jan 13, 1998·21 cites·15 claims
- 2858US5712177AMethod for forming a reverse dielectric stackMOTOROLA INC·Filed 1995·Granted Jan 27, 1998·18 cites·4 claims
- 2947US2005215361A1Racket frame structure made of aluminum alloyTSENG HSING-SAN·Filed 2004·Application pending·0 cites
- 3045US7001852B2Method of making a high quality thin dielectric layerFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Feb 21, 2006·2 cites·33 claims
- 3141US7704821B2In-situ nitridation of high-k dielectricsFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Apr 27, 2010·0 cites·13 claims
- 3241US2006234436A1Method of forming a semiconductor device having a high-k dielectricTSENG HSING H·Filed 2005·Application pending·0 cites
- 3340US2006094259A1Forming gas anneal process for high dielectric constant gate dielectrics in a semiconductor fabrication processFREESCALE SEMICONDUCTOR INC·Filed 2004·Application pending·0 cites
- 3437US2006084217A1Plasma impurification of a metal gate in a semiconductor fabrication processFREESCALE SEMICONDUCTOR INC·Filed 2004·Application pending·0 cites
- 3533US2002187651A1Method for making a semiconductor deviceFiled 2001·Application pending·0 cites
- 3628US2001003381A1Method to locate particles of a predetermined species within a solid and resulting structuresFiled 1998·Application pending·0 cites
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