Inventor · disambiguated record
Yoshihisa Mizutani
Also filed as: MIZUTANI YOSHIHISA
27 granted patents·1 pending application·531 citations·filing 1977–2019
97Inventor score
Top patents by PatentIndex Score
28 records- 0194US4661833AElectrically erasable and programmable read only memoryTOSHIBA KK·Filed 1985·Granted Apr 28, 1987·100 cites·6 claims
- 0293US4882707ANon-volatile semi-conductor memory device with double gate structureTOSHIBA KK·Filed 1989·Granted Nov 21, 1989·88 cites·14 claims
- 0387US10562836B2Process for producing acetic acidDAICEL CORP·Filed 2016·Granted Feb 18, 2020·2 cites·14 claims
- 0485US10894759B2Method and apparatus for producing acetic acidDAICEL CORP·Filed 2019·Granted Jan 19, 2021·1 cites·17 claims
- 0583US10265639B2Process for producing acetic acidDAICEL CORP·Filed 2017·Granted Apr 23, 2019·1 cites·11 claims
- 0683US4665418ASemiconductor memory deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted May 12, 1987·35 cites·10 claims
- 0782US10428006B2Method and apparatus for producing acetic acidDAICEL CORP·Filed 2016·Granted Oct 1, 2019·1 cites·17 claims
- 0882US10246399B2Process for producing acetic acidDAICEL CORP·Filed 2017·Granted Apr 2, 2019·1 cites·14 claims
- 0977US10183905B2Method for producing acetic acidDAICEL CORP·Filed 2016·Granted Jan 22, 2019·2 cites·26 claims
- 1076US4479297AMethod of fabricating three-dimensional semiconductor devices utilizing CeO2 and ion-implantation.TOKYO SHIBAURA ELECTRIC CO·Filed 1982·Granted Oct 30, 1984·42 cites·9 claims
- 1175US4754320AEEPROM with sidewall control gateTOSHIBA KK·Filed 1986·Granted Jun 28, 1988·34 cites·6 claims
- 1269US10633322B2Process for producing acetic acidDAICEL CORP·Filed 2019·Granted Apr 28, 2020·0 cites·16 claims
- 1368US10661196B2Process for producing acetic acidDAICEL CORP·Filed 2018·Granted May 26, 2020·0 cites·12 claims
- 1468US4437225AMethod of forming SOS devices by selective laser treatment and reactive formation of isolation regionsTOKYO SHIBAURA ELECTRIC CO·Filed 1982·Granted Mar 20, 1984·28 cites·8 claims
- 1568US4383883AMethod for fabricating semiconductor deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1981·Granted May 17, 1983·28 cites·8 claims
- 1664US6094244AReflective liquid crystal display deviceTOSHIBA KK·Filed 1996·Granted Jul 25, 2000·31 cites·8 claims
- 1764US4878199ASemiconductor memory deviceTOSHIBA KK·Filed 1988·Granted Oct 31, 1989·20 cites·16 claims
- 1855US5172196ANonvolatile semiconductor memory deviceTOSHIBA KK·Filed 1989·Granted Dec 15, 1992·15 cites·16 claims
- 1954US4698659AStacked complementary metal oxide semiconductor inverterTOKYO SHIBAURA ELECTRIC CO·Filed 1986·Granted Oct 6, 1987·20 cites·4 claims
- 2053US4637128AMethod of producing semiconductor deviceTOSHIBA KK·Filed 1985·Granted Jan 20, 1987·20 cites·12 claims
- 2153US4396930ACompact MOSFET device with reduced plurality of wire contactsTOKYO SHIBAURA ELECTRIC CO·Filed 1980·Granted Aug 2, 1983·17 cites·4 claims
- 2252US4106049ASemiconductor deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1977·Granted Aug 8, 1978·11 cites·12 claims
- 2348US4642880AMethod for manufacturing a recessed semiconductor deviceTOSHIBA KK·Filed 1985·Granted Feb 17, 1987·19 cites·11 claims
- 2448US2016176796A1Acetaldehyde production methodDAICEL CORP·Filed 2014·Application pending·0 cites
- 2547US4506279AMetal-oxide-semiconductor device with bilayered source and drainTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted Mar 19, 1985·8 cites·4 claims
- 2646US10428004B2Method for producing acetic acidDAICEL CORP·Filed 2017·Granted Oct 1, 2019·0 cites·20 claims
- 2736US4745453ASemiconductor deviceTOSHIBA KK·Filed 1986·Granted May 17, 1988·5 cites·9 claims
- 2825US4954871ASemiconductor device with composite electrodeMIZUTANI YOSHIHISA·Filed 1988·Granted Sep 4, 1990·2 cites·7 claims
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