Inventor · disambiguated record
Bernard S. Meyerson
Also filed as: MEYERSON BERNARD S · MEYERSON BERNARD STEELE
46 granted patents·1 pending application·3,259 citations·filing 1982–2008
99Inventor score
Top patents by PatentIndex Score
47 records- 0199US5461250ASiGe thin film or SOI MOSFET and method for making the sameIBM·Filed 1992·Granted Oct 24, 1995·386 cites·18 claims
- 0299US4647494ASilicon/carbon protection of metallic magnetic structuresIBM·Filed 1985·Granted Mar 3, 1987·157 cites·19 claims
- 0397US5714777ASi/SiGe vertical junction field effect transistorIBM·Filed 1997·Granted Feb 3, 1998·218 cites·25 claims
- 0497US5159508AMagnetic head slider having a protective coating thereonIBM·Filed 1990·Granted Oct 27, 1992·111 cites·5 claims
- 0596US5906680AMethod and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layersIBM·Filed 1996·Granted May 25, 1999·184 cites·59 claims
- 0695US4684542ALow pressure chemical vapor deposition of tungsten silicideIBM·Filed 1986·Granted Aug 4, 1987·150 cites·8 claims
- 0794US5298452AMethod and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layersIBM·Filed 1992·Granted Mar 29, 1994·194 cites·30 claims
- 0893US5659187ALow defect density/arbitrary lattice constant heteroepitaxial layersIBM·Filed 1995·Granted Aug 19, 1997·151 cites·74 claims
- 0992US5246884ACvd diamond or diamond-like carbon for chemical-mechanical polish etch stopIBM·Filed 1991·Granted Sep 21, 1993·174 cites·25 claims
- 1091US5808344ASingle-transistor logic and CMOS invertersIBM·Filed 1997·Granted Sep 15, 1998·95 cites·16 claims
- 1191US5540785AFabrication of defect free silicon on an insulating substrateIBM·Filed 1994·Granted Jul 30, 1996·106 cites·9 claims
- 1290US5316958AMethod of dopant enhancement in an epitaxial silicon layer by using germaniumIBM·Filed 1990·Granted May 31, 1994·131 cites·25 claims
- 1389US7401240B2Method for dynamically managing power in microprocessor chips according to present processing demandsIBM·Filed 2004·Granted Jul 15, 2008·52 cites·21 claims
- 1489US5777364AGraded channel field effect transistorIBM·Filed 1997·Granted Jul 7, 1998·93 cites·2 claims
- 1589US5160987AThree-dimensional semiconductor structures formed from planar layersIBM·Filed 1991·Granted Nov 3, 1992·197 cites·16 claims
- 1687US5462883AMethod of fabricating defect-free silicon on an insulating substrateIBM·Filed 1994·Granted Oct 31, 1995·81 cites·32 claims
- 1787US5008207AMethod of fabricating a narrow base transistorIBM·Filed 1989·Granted Apr 16, 1991·57 cites·33 claims
- 1885US6750119B2Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVDIBM·Filed 2001·Granted Jun 15, 2004·22 cites·13 claims
- 1985US4592933AHigh efficiency homogeneous chemical vapor depositionIBM·Filed 1984·Granted Jun 3, 1986·52 cites·12 claims
- 2084US5810924ALow defect density/arbitrary lattice constant heteroepitaxial layersIBM·Filed 1995·Granted Sep 22, 1998·72 cites·20 claims
- 2183US5821577AGraded channel field effect transistorIBM·Filed 1992·Granted Oct 13, 1998·66 cites·16 claims
- 2283US5117271ALow capacitance bipolar junction transistor and fabrication process therforIBM·Filed 1990·Granted May 26, 1992·56 cites·20 claims
- 2382US4436797AX-Ray maskIBM·Filed 1982·Granted Mar 13, 1984·40 cites·20 claims
- 2481US5352912AGraded bandgap single-crystal emitter heterojunction bipolar transistorIBM·Filed 1991·Granted Oct 4, 1994·52 cites·18 claims
- 2581US5106767AProcess for fabricating low capacitance bipolar junction transistorIBM·Filed 1991·Granted Apr 21, 1992·56 cites·19 claims
- 2680US7183576B2Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVDIBM·Filed 2004·Granted Feb 27, 2007·14 cites·12 claims
- 2770US7405422B2Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVDIBM·Filed 2006·Granted Jul 29, 2008·2 cites·1 claims
- 2870US6004137AMethod of making graded channel effect transistorIBM·Filed 1993·Granted Dec 21, 1999·33 cites·8 claims
- 2968US5057450AMethod for fabricating silicon-on-insulator structuresIBM·Filed 1991·Granted Oct 15, 1991·44 cites·8 claims
- 3067US7647519B2System and computer program product for dynamically managing power in microprocessor chips according to present processing demandsIBM·Filed 2008·Granted Jan 12, 2010·3 cites·22 claims
- 3167US5607511AMethod and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layersIBM·Filed 1994·Granted Mar 4, 1997·33 cites·7 claims
- 3266US6908866B2Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVDIBM·Filed 2004·Granted Jun 21, 2005·6 cites·12 claims
- 3366US4526593ARestrictor plug device with filter for a gas supply systemIBM·Filed 1983·Granted Jul 2, 1985·19 cites·1 claims
- 3460US5031029ACopper device and use thereof with semiconductor devicesIBM·Filed 1990·Granted Jul 9, 1991·28 cites·20 claims
- 3559US4504331ASilicon dopant source in intermetallic semiconductor growth operationsIBM·Filed 1983·Granted Mar 12, 1985·20 cites·7 claims
- 3656US7652288B2Epitaxial and polycrystalline growth of Si1-X-YGEXCY and Si1-YCY alloy layers on Si by UHV-CVDIBM·Filed 2008·Granted Jan 26, 2010·0 cites·18 claims
- 3753US4972246AEffective narrow band gap base transistorIBM·Filed 1988·Granted Nov 20, 1990·14 cites·23 claims
- 3852US5319240AThree dimensional integrated device and circuit structuresIBM·Filed 1993·Granted Jun 7, 1994·13 cites·7 claims
- 3950US5357899AEpitaxial silicon membranesIBM·Filed 1993·Granted Oct 25, 1994·17 cites·5 claims
- 4049US5241131AErosion/corrosion resistant diaphragmIBM·Filed 1992·Granted Aug 31, 1993·18 cites·27 claims
- 4147US5181964ASingle ended ultra-high vacuum chemical vapor deposition (uhv/cvd) reactorIBM·Filed 1990·Granted Jan 26, 1993·12 cites·3 claims
- 4241US5273829AEpitaxial silicon membranesIBM·Filed 1991·Granted Dec 28, 1993·11 cites·5 claims
- 4341US5151383AMethod for producing high energy electroluminescent devicesIBM·Filed 1989·Granted Sep 29, 1992·9 cites·13 claims
- 4440US2006105559A1Ultrathin buried insulators in Si or Si-containing materialIBM·Filed 2004·Application pending·0 cites
- 4535US5132765ANarrow base transistor and method of fabricating sameBLOUSE JEFFREY L·Filed 1991·Granted Jul 21, 1992·8 cites·12 claims
- 4631US5409852AMethod of Manufacturing three dimensional integrated device and circuit structuresIBM·Filed 1993·Granted Apr 25, 1995·2 cites·21 claims
- 4730US5119157ASemiconductor device with self-aligned contact to buried subcollectorIBM·Filed 1991·Granted Jun 2, 1992·0 cites·2 claims
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