Inventor · disambiguated record
Rajni J. Aggarwal
Also filed as: AGGARWAL RAJNI J
19 granted patents·5 pending applications·53 citations·filing 1992–2024
92Inventor score
Top patents by PatentIndex Score
24 records- 0190US9006838B2High sheet resistor in CMOS flowTEXAS INSTRUMENTS INC·Filed 2013·Granted Apr 14, 2015·7 cites·4 claims
- 0289US9548298B1Method of improving bipolar device signal to noise performance by reducing the effect of oxide interface trapping centersTEXAS INSTRUMENTS INC·Filed 2015·Granted Jan 17, 2017·6 cites·8 claims
- 0380US7968878B2Electrical test structure to detect stress induced defects using diodesTEXAS INSTRUMENTS INC·Filed 2009·Granted Jun 28, 2011·6 cites·19 claims
- 0475US2024429275A1Deep trench isolation with field oxideTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 0574US8580631B2High sheet resistor in CMOS flowAGGARWAL RAJNI J·Filed 2011·Granted Nov 12, 2013·3 cites·16 claims
- 0670US9665675B2Method to improve transistor matchingTEXAS INSTRUMENTS INC·Filed 2014·Granted May 30, 2017·2 cites·4 claims
- 0769US10339251B2Method to improve transistor matchingTEXAS INSTRUMENTS INC·Filed 2017·Granted Jul 2, 2019·1 cites·11 claims
- 0868US9728581B2Construction of a hall-effect sensor in a buried isolation regionTEXAS INSTRUMENTS INC·Filed 2015·Granted Aug 8, 2017·1 cites·7 claims
- 0965US12513974B2Reduced silicon dislocation defects from deep SI trench integrationTEXAS INSTRUMENTS INC·Filed 2022·Granted Dec 30, 2025·0 cites·20 claims
- 1065US12087813B2Deep trench isolation with field oxideTEXAS INSTRUMENTS INC·Filed 2021·Granted Sep 10, 2024·0 cites·20 claims
- 1164US9536822B2Drawn dummy FeCAP, via and metal structuresSUMMERFELT SCOTT R·Filed 2009·Granted Jan 3, 2017·2 cites·20 claims
- 1263US10872925B2Hall sensor with buried hall plateTEXAS INSTRUMENTS INC·Filed 2019·Granted Dec 22, 2020·0 cites·10 claims
- 1358US10396122B2Hall sensor with buried hall plateTEXAS INSTRUMENTS INC·Filed 2017·Granted Aug 27, 2019·0 cites·10 claims
- 1457US9698211B2High sheet resistor in CMOS flowTEXAS INSTRUMENTS INC·Filed 2016·Granted Jul 4, 2017·0 cites·16 claims
- 1555US9362270B2High sheet resistor in CMOS flowTEXAS INSTRUMENTS INC·Filed 2015·Granted Jun 7, 2016·0 cites·3 claims
- 1655US5346851AMethod of fabricating Shannon Cell circuitsTEXAS INSTRUMENTS INC·Filed 1992·Granted Sep 13, 1994·24 cites·3 claims
- 1754US9773793B2Transistor performance modification with stressor structuresSUMMERFELT SCOTT R·Filed 2009·Granted Sep 26, 2017·0 cites·19 claims
- 1853US8609501B2Fluorine implant under isolation dielectric structures to improve bipolar transistor performance and matchingTIAN WEIDONG·Filed 2012·Granted Dec 17, 2013·1 cites·20 claims
- 1951US9818740B2Method of improving bipolar device signal to noise performance by reducing the effect of oxide interface trapping centersTEXAS INSTRUMENTS INC·Filed 2016·Granted Nov 14, 2017·0 cites·18 claims
- 2051US2014370621A1Ferroelectric capacitor encapsulated with a hydrogen barrierTEXAS INSTRUMENTS INC·Filed 2014·Application pending·0 cites
- 2148US8377719B2Drawn dummy FeCAP, via and metal structuresTEXAS INSTRUMENTS INC·Filed 2011·Granted Feb 19, 2013·0 cites·8 claims
- 2244US2011079878A1Ferroelectric capacitor encapsulated with a hydrogen barrierTEXAS INSTRUMENTS INC·Filed 2010·Application pending·0 cites
- 2342US2012241907A1Ferroelectric capacitor encapsulated with a hydrogen barrierAGGARWAL RAJNI J·Filed 2012·Application pending·0 cites
- 2433US2016218062A1Thin film resistor integration in copper damascene metallizationTEXAS INSTRUMENTS INC·Filed 2015·Application pending·0 cites
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