Inventor · disambiguated record
Kazunari Ishimaru
Also filed as: ISHIMARU KAZUNARI
25 granted patents·5 pending applications·645 citations·filing 1993–2008
97Inventor score
Top patents by PatentIndex Score
30 records- 0195US6656826B2Semiconductor device with fuse to be blown with energy beam and method of manufacturing the semiconductor deviceTOSHIBA KK·Filed 2001·Granted Dec 2, 2003·106 cites·26 claims
- 0293US7129550B2Fin-shaped semiconductor deviceTOSHIBA KK·Filed 2004·Granted Oct 31, 2006·56 cites·20 claims
- 0393US5578518AMethod of manufacturing a trench isolation having round cornersTOSHIBA KK·Filed 1994·Granted Nov 26, 1996·159 cites·12 claims
- 0492US7723171B2Semiconductor device and method of fabricating the sameTOSHIBA KK·Filed 2008·Granted May 25, 2010·20 cites·9 claims
- 0592US6977837B2Semiconductor memory including static random access memory formed of FinFETTOSHIBA KK·Filed 2004·Granted Dec 20, 2005·67 cites·16 claims
- 0687US7772692B2Semiconductor device with cooling memberTOSHIBA KK·Filed 2007·Granted Aug 10, 2010·15 cites·21 claims
- 0784US7371644B2Semiconductor device and method of fabricating the sameTOSHIBA KK·Filed 2006·Granted May 13, 2008·10 cites·5 claims
- 0877US7687368B2Semiconductor device manufacturing methodTOSHIBA KK·Filed 2005·Granted Mar 30, 2010·8 cites·14 claims
- 0977US6627528B1Semiconductor device and its manufacturing processTOSHIBA KK·Filed 2000·Granted Sep 30, 2003·25 cites·33 claims
- 1076US7432542B2Semiconductor device with electrostrictive layer in semiconductor layer and method of manufacturing the sameTOSHIBA KK·Filed 2006·Granted Oct 7, 2008·6 cites·12 claims
- 1173US7235469B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2004·Granted Jun 26, 2007·18 cites·20 claims
- 1271US7164175B2Semiconductor device with silicon-film fins and method of manufacturing the sameTOSHIBA KK·Filed 2004·Granted Jan 16, 2007·15 cites·11 claims
- 1369US6365472B1Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 1999·Granted Apr 2, 2002·32 cites·10 claims
- 1467US7468923B2Semiconductor integrated circuitTOSHIBA KK·Filed 2006·Granted Dec 23, 2008·6 cites·16 claims
- 1567US7061054B2Semiconductor device and semiconductor device manufacturing methodTOSHIBA KK·Filed 2003·Granted Jun 13, 2006·16 cites·29 claims
- 1654US5998849ASemiconductor device having highly-doped source/drain regions with interior edges in a dislocation-free stateTOSHIBA KK·Filed 1997·Granted Dec 7, 1999·17 cites·6 claims
- 1749US2006166456A1Semiconductor device and manufacturing method thereofFUJIWARA MAKOTO·Filed 2006·Application pending·0 cites
- 1848US7541245B2Semiconductor device with silicon-film fins and method of manufacturing the sameTOSHIBA KK·Filed 2006·Granted Jun 2, 2009·0 cites·15 claims
- 1948US5731623ABipolar device with trench structureTOSHIBA KK·Filed 1997·Granted Mar 24, 1998·15 cites·9 claims
- 2045US5397910ASemiconductor integrated circuit device with wiring microstructure formed on gates and method of manufacturing the sameTOSHIBA KK·Filed 1993·Granted Mar 14, 1995·12 cites·7 claims
- 2144US5518961ASemiconductor integrated circuit device with wiring microstructure formed on gates and method of manufacturing the sameTOSHIBA KK·Filed 1994·Granted May 21, 1996·11 cites·4 claims
- 2240US2006237788A1Semiconductor device and its fabrication methodTOSHIBA KK·Filed 2006·Application pending·0 cites
- 2340US2007007566A1Semiconductor device having silicide film and method of manufacturing the sameISHIMARU KAZUNARI·Filed 2006·Application pending·0 cites
- 2439US5886387ABiCMOS semiconductor integrated circuit device having MOS transistor and bipolar transistor regions of different thicknessTOSHIBA KK·Filed 1996·Granted Mar 23, 1999·8 cites·6 claims
- 2539US2006170047A1Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2005·Application pending·0 cites
- 2637US6355982B2Semiconductor memory device having pairs of bit lines arranged on both sides of memory cellsTOSHIBA KK·Filed 1998·Granted Mar 12, 2002·5 cites·19 claims
- 2737US5960272AElement-isolating construct of a semiconductor integrated circuit having an offset region between impurity doped regions, and process of manufacturing the constructTOSHIBA KK·Filed 1996·Granted Sep 28, 1999·5 cites·7 claims
- 2837US5496744AMethod of fabricating complementary poly emitter transistorsTOSHIBA KK·Filed 1994·Granted Mar 5, 1996·8 cites·5 claims
- 2936US6066543AMethod of manufacturing a gap filling for shallow trench isolationTOSHIBA KK·Filed 1998·Granted May 23, 2000·5 cites·19 claims
- 3032US2001038552A1Semiconductor memory with switches for reducing leakage currentTOSHIBA KK·Filed 2001·Application pending·0 cites
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