Inventor · disambiguated record
Chao-Ching Hsieh
Also filed as: HSIEH CHAO · HSIEH CHAO-CHING
27 granted patents·12 pending applications·136 citations·filing 1999–2019
95Inventor score
Files withUNITED MICROELECTRONICS CORP25HSIEH CHAO-CHING7CHANG YU-LAN1CHEN NENG-KUO1CHIANG YI-YIING1
Top patents by PatentIndex Score
39 records- 0195US10269868B1Semiconductor structure and the method of making the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Apr 23, 2019·12 cites·12 claims
- 0294US10177311B1Resistive random access memory (RRAM) and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jan 8, 2019·11 cites·20 claims
- 0393US10283564B1Semiconductor structure and the method of making the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted May 7, 2019·8 cites·18 claims
- 0489US8118319B2Twisted structure for a skateboardHSIEH CHAO·Filed 2010·Granted Feb 21, 2012·32 cites·5 claims
- 0583US8405143B2Semiconductor deviceLIN CHUN-HSIEN·Filed 2011·Granted Mar 26, 2013·7 cites·19 claims
- 0683US7390754B2Method of forming a silicideUNITED MICROELECTRONICS CORP·Filed 2006·Granted Jun 24, 2008·9 cites·15 claims
- 0781US7344978B2Fabrication method of semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2005·Granted Mar 18, 2008·9 cites·10 claims
- 0878US7915127B2Manufacturing method of semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2009·Granted Mar 29, 2011·7 cites·20 claims
- 0975US7482668B2Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2007·Granted Jan 27, 2009·5 cites·10 claims
- 1073US7432167B2Method of fabricating a strained silicon channel metal oxide semiconductor transistorUNITED MICROELECTRONICS CORP·Filed 2007·Granted Oct 7, 2008·5 cites·34 claims
- 1172US7229920B2Method of fabricating metal silicide layerUNITED MICROELECTRONICS CORP·Filed 2005·Granted Jun 12, 2007·4 cites·18 claims
- 1271US7390729B2Method of fabricating a semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2006·Granted Jun 24, 2008·4 cites·18 claims
- 1370US7884028B2Method of removing material layer and remnant metalUNITED MICROELECTRONICS CORP·Filed 2007·Granted Feb 8, 2011·3 cites·20 claims
- 1467US7951662B2Method of fabricating strained silicon transistorUNITED MICROELECTRONICS CORP·Filed 2008·Granted May 31, 2011·2 cites·17 claims
- 1567US7892935B2Semiconductor processUNITED MICROELECTRONICS CORP·Filed 2006·Granted Feb 22, 2011·2 cites·12 claims
- 1666US7785972B2Method for fabricating semiconductor MOS deviceUNITED MICROELECTRONICS CORP·Filed 2006·Granted Aug 31, 2010·2 cites·17 claims
- 1758US10636794B2Magnetic tunnel junction structure of magnetic random access memory cellUNITED MICROELECTRONICS CORP·Filed 2019·Granted Apr 28, 2020·0 cites·10 claims
- 1857US7649263B2Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2007·Granted Jan 19, 2010·1 cites·11 claims
- 1957US7553762B2Method for forming metal silicide layerUNITED MICROELECTRONICS CORP·Filed 2007·Granted Jun 30, 2009·1 cites·25 claims
- 2057US6371045B1Physical vapor deposition device for forming a metallic layer on a semiconductor waferUNITED MICROELECTRONICS CORP·Filed 1999·Granted Apr 16, 2002·12 cites·7 claims
- 2152US10312238B2Manufacturing method of magnetic random access memory cellUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jun 4, 2019·0 cites·10 claims
- 2252US7572722B2Method of fabricating nickel silicideUNITED MICROELECTRONICS CORP·Filed 2007·Granted Aug 11, 2009·0 cites·10 claims
- 2350US7385294B2Semiconductor device having nickel silicide and method of fabricating nickel silicideUNITED MICROELECTRONICS CORP·Filed 2005·Granted Jun 10, 2008·0 cites·7 claims
- 2449US8440580B2Method of fabricating silicon nitride gap-filling layerCHEN NENG-KUO·Filed 2007·Granted May 14, 2013·0 cites·17 claims
- 2545US7670438B2Method of removing particles from waferUNITED MICROELECTRONICS CORP·Filed 2007·Granted Mar 2, 2010·0 cites·20 claims
- 2645US2008224232A1Silicidation process for mos transistor and transistor structureUNITED MICROELECTRONICS CORP·Filed 2007·Application pending·0 cites
- 2743US7595264B2Fabrication method of semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2008·Granted Sep 29, 2009·0 cites·16 claims
- 2843US2009102058A1Method for forming a plug structure and related plug structure thereofHSIEH CHAO-CHING·Filed 2007·Application pending·0 cites
- 2942US8431487B2Method for forming a plug structureHSIEH CHAO-CHING·Filed 2011·Granted Apr 30, 2013·0 cites·8 claims
- 3040US2007032077A1Method of manufacturing metal plug and contactHUNG TZUNG-YU·Filed 2005·Application pending·0 cites
- 3140US2007087573A1Pre-treatment method for physical vapor deposition of metal layer and method of forming metal silicide layerCHIANG YI-YIING·Filed 2005·Application pending·0 cites
- 3239US2007082494A1Method for forming silicide layerUNITED MICROELECTRONICS CORP·Filed 2006·Application pending·0 cites
- 3339US2008009134A1Method for fabricating metal silicideHUNG TSUNG-YU·Filed 2006·Application pending·0 cites
- 3437US2008171449A1Method for cleaning salicideHSIEH CHAO-CHING·Filed 2007·Application pending·0 cites
- 3536US2007059878A1Salicide processCHANG YU-LAN·Filed 2005·Application pending·0 cites
- 3634US2007049017A1Plug fabricating method for dielectric layerHSIEH CHAO-CHING·Filed 2005·Application pending·0 cites
- 3733US2006240666A1Method of forming silicideHSIEH CHAO-CHING·Filed 2005·Application pending·0 cites
- 3831US2012122288A1Method of fabricating a silicide layerHSIEH CHAO-CHING·Filed 2010·Application pending·0 cites
- 3930US2007020925A1Method of forming a nickel platinum silicideHSIEH CHAO-CHING·Filed 2005·Application pending·0 cites
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