Inventor · disambiguated record
Masashige Aoyama
Also filed as: AOYAMA MASASHIGE
6 granted patents·166 citations·filing 1988–2004
84Inventor score
Technology areasH10D
Files withSANYO ELECTRIC CO6
Top patents by PatentIndex Score
6 records- 0192US4908681AInsulated gate field effect transistor with buried layerSANYO ELECTRIC CO·Filed 1988·Granted Mar 13, 1990·112 cites·4 claims
- 0277US6635925B1Semiconductor device and method of manufacturing the sameSANYO ELECTRIC CO·Filed 2000·Granted Oct 21, 2003·24 cites·8 claims
- 0365US6784059B1Semiconductor device and method of manufacturing thereofSANYO ELECTRIC CO·Filed 2000·Granted Aug 31, 2004·11 cites·20 claims
- 0461US6683349B1Semiconductor device and method of manufacturing the sameSANYO ELECTRIC CO·Filed 2000·Granted Jan 27, 2004·10 cites·7 claims
- 0541US5940708AMethod for production of semiconductor integrated circuit deviceSANYO ELECTRIC CO·Filed 1996·Granted Aug 17, 1999·9 cites·5 claims
- 0639US7224023B2Semiconductor device and method of manufacturing thereofSANYO ELECTRIC CO·Filed 2004·Granted May 29, 2007·0 cites·9 claims
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