Inventor · disambiguated record
Gang Mao
Also filed as: MAO GANG
6 granted patents·3 pending applications·10 citations·filing 2006–2024
74Inventor score
Files withSEMICONDUCTOR MFG INT SHANGHAI CORP3HUANG XIAOLU1MAO GANG1SEMICONDUCTOR MFG INT BEIJING CORP1SEMICONDUCTOR MFG INT SHANGHAI1
Top patents by PatentIndex Score
9 records- 0176US10121880B2Fin field-effect transistor and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2017·Granted Nov 6, 2018·3 cites·18 claims
- 0274US10236216B2Method for manufacturing a semiconductor device having a fin located on a substrateSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2017·Granted Mar 19, 2019·2 cites·10 claims
- 0363USD1072328SSolar lightMAO GANG·Filed 2023·Granted Apr 22, 2025·3 cites·1 claims
- 0461US9595585B2Methods for high-k metal gate CMOS with SiC and SiGe source/drain regionsSEMICONDUCTOR MFG INT BEIJING CORP·Filed 2014·Granted Mar 14, 2017·1 cites·20 claims
- 0554US12276404B1Led lamp with panel locking assemblySHENZHEN SNC OPTO ELECTRONIC CO LTD·Filed 2024·Granted Apr 15, 2025·0 cites·9 claims
- 0653US7897508B2Method to eliminate Cu dislocation for reliability and yieldSEMICONDUCTOR MFG INT SHANGHAI·Filed 2006·Granted Mar 1, 2011·1 cites·14 claims
- 0751US2019164845A1Semiconductor device and manufacturing method thereforSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2019·Application pending·0 cites
- 0836US2013020652A1Method for suppressing short channel effect of cmos deviceSHANGHAI HUALI MICROELECT CORP·Filed 2011·Application pending·0 cites
- 0931US2013049119A1Multi-working voltages cmos device with single gate oxide layer thickness and manufacturing method thereofHUANG XIAOLU·Filed 2011·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →