Inventor · disambiguated record
Roger A. Haken
Also filed as: HAKEN ROGER · HAKEN ROGER A
43 granted patents·2,608 citations·filing 1976–1993
99Inventor score
Top patents by PatentIndex Score
43 records- 0197US4821085AVLSI local interconnect structureTEXAS INSTRUMENTS INC·Filed 1985·Granted Apr 11, 1989·111 cites·12 claims
- 0296US4804636AProcess for making integrated circuits having titanium nitride triple interconnectTEXAS INSTRUMENTS INC·Filed 1986·Granted Feb 14, 1989·244 cites·56 claims
- 0396US4657628AProcess for patterning local interconnectsTEXAS INSTRUMENTS INC·Filed 1986·Granted Apr 14, 1987·213 cites·11 claims
- 0495US5010032AProcess for making CMOS device with both P+ and N+ gates including refractory metal silicide and nitride interconnectsTEXAS INSTRUMENTS INC·Filed 1989·Granted Apr 23, 1991·107 cites·22 claims
- 0595US4975756ASRAM with local interconnectTEXAS INSTRUMENTS INC·Filed 1989·Granted Dec 4, 1990·181 cites·4 claims
- 0694US4931411AIntegrated circuit process with TiN-gate transistorTEXAS INSTRUMENTS INC·Filed 1988·Granted Jun 5, 1990·97 cites·17 claims
- 0794US4613956AFloating gate memory with improved dielectricTEXAS INSTRUMENTS INC·Filed 1983·Granted Sep 23, 1986·76 cites·4 claims
- 0893US5024960ADual LDD submicron CMOS process for making low and high voltage transistors with common gateTEXAS INSTRUMENTS INC·Filed 1988·Granted Jun 18, 1991·77 cites·8 claims
- 0993US4690730AOxide-capped titanium silicide formationTEXAS INSTRUMENTS INC·Filed 1986·Granted Sep 1, 1987·87 cites·55 claims
- 1091US4656732AIntegrated circuit fabrication processTEXAS INSTRUMENTS INC·Filed 1984·Granted Apr 14, 1987·78 cites·8 claims
- 1190US4890141ACMOS device with both p+ and n+ gatesTEXAS INSTRUMENTS INC·Filed 1988·Granted Dec 26, 1989·62 cites·41 claims
- 1289US5302539AVLSI interconnect method and structureTEXAS INSTRUMENTS INC·Filed 1990·Granted Apr 12, 1994·65 cites·13 claims
- 1389US4788160AProcess for formation of shallow silicided junctionsTEXAS INSTRUMENTS INC·Filed 1987·Granted Nov 29, 1988·92 cites·28 claims
- 1488US4845047AThreshold adjustment method for an IGFETTEXAS INSTRUMENTS INC·Filed 1987·Granted Jul 4, 1989·53 cites·6 claims
- 1586US5122846ABistable logic device using trench transistorsTEXAS INSTRUMENTS INC·Filed 1991·Granted Jun 16, 1992·70 cites·58 claims
- 1686US4442591AHigh-voltage CMOS processTEXAS INSTRUMENTS INC·Filed 1982·Granted Apr 17, 1984·60 cites·11 claims
- 1785US4590663AHigh voltage CMOS technology with N-channel source/drain extensionsTEXAS INSTRUMENTS INC·Filed 1983·Granted May 27, 1986·60 cites·10 claims
- 1884US4814854AIntegrated circuit device and process with tin-gate transistorTEXAS INSTRUMENTS INC·Filed 1986·Granted Mar 21, 1989·47 cites·15 claims
- 1984US4811078AIntegrated circuit device and process with tin capacitorsTEXAS INSTRUMENTS INC·Filed 1986·Granted Mar 7, 1989·65 cites·37 claims
- 2084US4746219ALocal interconnectTEXAS INSTRUMENTS INC·Filed 1986·Granted May 24, 1988·68 cites·16 claims
- 2184US4676866AProcess to increase tin thicknessTEXAS INSTRUMENTS INC·Filed 1986·Granted Jun 30, 1987·67 cites·19 claims
- 2283US4987093AThrough-field implant isolated devices and methodTEXAS INSTRUMENTS INC·Filed 1989·Granted Jan 22, 1991·59 cites·3 claims
- 2382US4577390AFabrication of polysilicon to polysilicon capacitors with a composite dielectric layerTEXAS INSTRUMENTS INC·Filed 1983·Granted Mar 25, 1986·51 cites·7 claims
- 2481US5077228AProcess for simultaneous formation of trench contact and vertical transistor gate and structureTEXAS INSTRUMENTS INC·Filed 1989·Granted Dec 31, 1991·56 cites·10 claims
- 2581US4613885AHigh-voltage CMOS processTEXAS INSTRUMENTS INC·Filed 1984·Granted Sep 23, 1986·47 cites·11 claims
- 2681US4524431AHigh-speed nonvolatile memory arrayTEXAS INSTRUMENTS INC·Filed 1982·Granted Jun 18, 1985·37 cites·7 claims
- 2779US4811076ADevice and process with doubled capacitorsTEXAS INSTRUMENTS INC·Filed 1986·Granted Mar 7, 1989·52 cites·10 claims
- 2876US5021851ANMOS source/drain doping with both P and AsTEXAS INSTRUMENTS INC·Filed 1989·Granted Jun 4, 1991·44 cites·11 claims
- 2975US4587718AProcess for forming TiSi2 layers of differing thicknesses in a single integrated circuitTEXAS INSTRUMENTS INC·Filed 1984·Granted May 13, 1986·32 cites·18 claims
- 3073US5141890ACMOS sidewall oxide-lightly doped drain processTEXAS INSTRUMENTS INC·Filed 1986·Granted Aug 25, 1992·41 cites·5 claims
- 3173US4851360ANMOS source/drain doping with both P and AsTEXAS INSTRUMENTS INC·Filed 1988·Granted Jul 25, 1989·28 cites·8 claims
- 3270US5389809ASilicided MOS transistorTEXAS INSTRUMENTS INC·Filed 1992·Granted Feb 14, 1995·48 cites·21 claims
- 3365US4894693ASingle-polysilicon dram device and processTIGELAAR HOWARD L·Filed 1986·Granted Jan 16, 1990·32 cites·26 claims
- 3460US4922312ADRAM process with improved polysilicon-to-polysilicon capacitor and the capacitorTEXAS INSTRUMENTS INC·Filed 1988·Granted May 1, 1990·17 cites·13 claims
- 3558US5244825ADRAM process with improved poly-to-poly capacitorTEXAS INSTRUMENTS INC·Filed 1992·Granted Sep 14, 1993·18 cites·13 claims
- 3657US4949154AThin dielectrics over polysiliconTEXAS INSTRUMENTS INC·Filed 1989·Granted Aug 14, 1990·22 cites·12 claims
- 3747US4890147AThrough-field implant isolated devices and methodTEXAS INSTRUMENTS INC·Filed 1987·Granted Dec 26, 1989·14 cites·3 claims
- 3847US4521446AMethod for depositing polysilicon over TiO2TEXAS INSTRUMENTS INC·Filed 1983·Granted Jun 4, 1985·13 cites·9 claims
- 3939US4472791ACMOS Unipolar nonvolatile memory cellTEXAS INSTRUMENTS INC·Filed 1982·Granted Sep 18, 1984·3 cites·8 claims
- 4037US5359216ADRAM process with improved polysilicon-to-polysilicon capacitor and the capacitorTEXAS INSTRUMENTS INC·Filed 1993·Granted Oct 25, 1994·5 cites·19 claims
- 4134USRE34535EFloating gate memory with improved dielectricTEXAS INSTRUMENTS INC·Filed 1990·Granted Feb 8, 1994·4 cites·3 claims
- 4232US5098192ADRAM with improved poly-to-poly capacitorTEXAS INSTRUMENTS INC·Filed 1991·Granted Mar 24, 1992·2 cites·64 claims
- 4332US4125818ACharge-coupled devicesNAT RES DEV·Filed 1976·Granted Nov 14, 1978·3 cites·3 claims
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