Inventor · disambiguated record
Masanobu Igeta
Also filed as: IGETA MASANOBU
11 granted patents·14 pending applications·99 citations·filing 2001–2024
88Inventor score
Top patents by PatentIndex Score
25 records- 0187US8853100B2Film formation method, film formation apparatus and storage mediumTOKYO ELECTRON LTD·Filed 2013·Granted Oct 7, 2014·9 cites·9 claims
- 0286US7129185B2Substrate processing method and a computer readable storage medium storing a program for controlling sameTOKYO ELECTRON LTD·Filed 2004·Granted Oct 31, 2006·36 cites·17 claims
- 0386US6927112B2Radical processing of a sub-nanometer insulation filmTOKYO ELECTRON LTD·Filed 2002·Granted Aug 9, 2005·27 cites·47 claims
- 0483US7754293B2Film forming methodTOKYO ELECTRON LTD·Filed 2006·Granted Jul 13, 2010·9 cites·19 claims
- 0573US7497964B2Plasma igniting method and substrate processing methodTOKYO ELECTRON LTD·Filed 2006·Granted Mar 3, 2009·4 cites·6 claims
- 0672US2024047218A1Systems and methods for improving planarity using selective atomic layer etching (ale)TOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 0765US7501352B2Method and system for forming an oxynitride layerTOKYO ELECTRON LTD·Filed 2005·Granted Mar 10, 2009·3 cites·163 claims
- 0863US2025092514A1Substrate processing method and substrate processing systemTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 0962US7125799B2Method and device for processing substrate, and apparatus for manufacturing semiconductor deviceTOKYO ELECTRON LTD·Filed 2002·Granted Oct 24, 2006·8 cites·18 claims
- 1060US11823910B2Systems and methods for improving planarity using selective atomic layer etching (ALE)TOKYO ELECTRON LTD·Filed 2020·Granted Nov 21, 2023·0 cites·18 claims
- 1155US11605712B2Fabrication process flow of dielectric layer for isolation of nano-sheet devices on bulk silicon substrateTOKYO ELECTRON LTD·Filed 2021·Granted Mar 14, 2023·0 cites·18 claims
- 1255US2008139000A1Radical Processing of a Sub-Nanometer Insulation FilmTOKYO ELECTRON LTD·Filed 2008·Application pending·0 cites
- 1351US7378358B2Method for forming insulating film on substrate, method for manufacturing semiconductor device and substrate-processing apparatusTOKYO ELECTRON LTD·Filed 2003·Granted May 27, 2008·3 cites·3 claims
- 1451US2007190802A1Method for manufacturing semiconductor device, substrate treater, and substrate treatment systemTOKYO ELECTRON LTD·Filed 2007·Application pending·0 cites
- 1550US10700009B2Ruthenium metal feature fill for interconnectsTOKYO ELECTRON LTD·Filed 2018·Granted Jun 30, 2020·0 cites·20 claims
- 1650US2023411146A1Substrate processing method and substrate processing deviceTOKYO ELECTRON LTD·Filed 2021·Application pending·0 cites
- 1749US2005170541A1Radical processing of a sub-nanometer insulation filmTOKYO ELECTRON LTD·Filed 2005·Application pending·0 cites
- 1848US2021376123A1Substrate processing method for forming inner spacers in a nano-sheet deviceTOKYO ELECTRON LTD·Filed 2021·Application pending·0 cites
- 1940US2007065593A1Multi-source method and system for forming an oxide layerWAJDA CORY·Filed 2005·Application pending·0 cites
- 2040US2006228898A1Method and system for forming a high-k dielectric layerWAJDA CORY·Filed 2005·Application pending·0 cites
- 2140US2007066084A1Method and system for forming a layer with controllable spstial variationWAJDA CORY·Filed 2005·Application pending·0 cites
- 2239US2004023513A1Method for manufacturing semiconductor device, substrate treater, and substrate treatment systemFiled 2001·Application pending·0 cites
- 2338US2006174833A1Substrate treating apparatus and method of substrate treatmentTOKYO ELECTRON LTD·Filed 2003·Application pending·0 cites
- 2435US2004053472A1Method for film formation of gate insulator, apparatus for film formation of gate insulator, and cluster toolFiled 2001·Application pending·0 cites
- 2533US2016322218A1Film Forming Method and Film Forming ApparatusTOKYO ELECTRON LTD·Filed 2016·Application pending·0 cites
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