Inventor · disambiguated record
Manfred Pfaffenlehner
Also filed as: PFAFFENLEHNER MANFRED
23 granted patents·3 pending applications·99 citations·filing 2005–2024
93Inventor score
Files withINFINEON TECHNOLOGIES AG18INFINEON TECHNOLOGIES AUSTRIA3INFINEON TECHNOLOGIES AUSTRIA AG2SCHULZE HANS-JOACHIM2MAUDER ANTON1
Top patents by PatentIndex Score
26 records- 0194US7514750B2Semiconductor device and fabrication method suitable thereforINFINEON TECHNOLOGIES AG·Filed 2005·Granted Apr 7, 2009·22 cites·10 claims
- 0292US7842590B2Method for manufacturing a semiconductor substrate including laser annealingINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted Nov 30, 2010·23 cites·21 claims
- 0390US7470952B2Power IGBT with increased robustnessINFINEON TECHNOLOGIES AG·Filed 2006·Granted Dec 30, 2008·22 cites·10 claims
- 0487US8367532B2Semiconductor device and fabrication methodINFINEON TECHNOLOGIES AG·Filed 2012·Granted Feb 5, 2013·5 cites·23 claims
- 0582US7812427B2Soft switching semiconductor component with high robustness and low switching lossesINFINEON TECHNOLOGIES AG·Filed 2007·Granted Oct 12, 2010·8 cites·22 claims
- 0680US7709887B2Semiconductor component and methodINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted May 4, 2010·7 cites·21 claims
- 0779US8003502B2Semiconductor device and fabrication methodINFINEON TECHNOLOGIES AUSTRIA·Filed 2009·Granted Aug 23, 2011·4 cites·22 claims
- 0875US11094779B2Semiconductor device having an edge termination region comprising a first edge termination region of a second conductivity type adjacent to a second edge termination region of a first conductivity typeINFINEON TECHNOLOGIES AG·Filed 2017·Granted Aug 17, 2021·2 cites·1 claims
- 0970US10957764B2Vertical semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2015·Granted Mar 23, 2021·2 cites·9 claims
- 1068US10600862B2High voltage termination structure of a power semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Mar 24, 2020·1 cites·20 claims
- 1168US8828810B2Method of producing a semiconductor including two differently doped semiconductor zonesSCHULZE HANS-JOACHIM·Filed 2012·Granted Sep 9, 2014·2 cites·9 claims
- 1263US11848377B2Semiconductor component with edge termination regionINFINEON TECHNOLOGIES AG·Filed 2021·Granted Dec 19, 2023·0 cites·9 claims
- 1361US2025107115A1Power Semiconductor Device and Method of Producing a Power Semiconductor DeviceINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 1460US10497801B2Method of manufacturing a semiconductor device having an undulated profile of net doping in a drift zoneINFINEON TECHNOLOGIES AG·Filed 2019·Granted Dec 3, 2019·0 cites·20 claims
- 1559US8159022B2Robust semiconductor device with an emitter zone and a field stop zoneSCHULZE HANS-JOACHIM·Filed 2008·Granted Apr 17, 2012·1 cites·15 claims
- 1657US11018249B2Semiconductor component with edge termination regionINFINEON TECHNOLOGIES AG·Filed 2019·Granted May 25, 2021·0 cites·19 claims
- 1755US10211325B2Semiconductor device including undulated profile of net doping in a drift zoneINFINEON TECHNOLOGIES AG·Filed 2014·Granted Feb 19, 2019·0 cites·14 claims
- 1854US9177829B2Semiconductor component having a passivation layer and production methodINFINEON TECHNOLOGIES AG·Filed 2014·Granted Nov 3, 2015·0 cites·26 claims
- 1954US8252671B2Semiconductor device and fabrication methodMAUDER ANTON·Filed 2011·Granted Aug 28, 2012·0 cites·22 claims
- 2054US2023274996A1Chip arrangement, chip package, method of forming a chip arrangement, and method of forming a chip packageINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
- 2149US11251266B2Power semiconductor device and method of processing a power semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2020·Granted Feb 15, 2022·0 cites·20 claims
- 2246US8035195B2Semiconductor elementINFINEON TECHNOLOGIES AG·Filed 2008·Granted Oct 11, 2011·0 cites·18 claims
- 2345US9385181B2Semiconductor diode and method of manufacturing a semiconductor diodeINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jul 5, 2016·0 cites·12 claims
- 2445US2020357883A1Power Semiconductor Device and MethodINFINEON TECHNOLOGIES AG·Filed 2020·Application pending·0 cites
- 2542US10998399B2Power semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2019·Granted May 4, 2021·0 cites·19 claims
- 2641US9825136B2Semiconductor component and integrated circuitINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Nov 21, 2017·0 cites·16 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →