Inventor · disambiguated record
Yih-Feng Chyan
Also filed as: CHYAN YIH-FENG
12 granted patents·187 citations·filing 1997–2001
91Inventor score
Top patents by PatentIndex Score
12 records- 0183US6274490B1Method of manufacturing semiconductor devices having high pressure annealLUCENT TECHNOLOGIES INC·Filed 2000·Granted Aug 14, 2001·30 cites·24 claims
- 0282US6518622B1Vertical replacement gate (VRG) MOSFET with a conductive layer adjacent a source/drain region and method of manufacture thereforAGERE SYSTEMS INC·Filed 2000·Granted Feb 11, 2003·35 cites·24 claims
- 0379US6903411B1Architecture for circuit connection of a vertical transistorAGERE SYSTEMS INC·Filed 2000·Granted Jun 7, 2005·29 cites·19 claims
- 0474US6451660B1Method of forming bipolar transistors comprising a native oxide layer formed on a substrate by rinsing the substrate in ozonated waterAGERE SYST GUARDIAN CORP·Filed 2000·Granted Sep 17, 2002·18 cites·19 claims
- 0571US6359317B1Vertical PNP bipolar transistor and its method of fabricationAGERE SYST GUARDIAN CORP·Filed 1998·Granted Mar 19, 2002·32 cites·6 claims
- 0660US6358807B1Bipolar semiconductor device and method of forming same having reduced transient enhanced diffusionAGERE SYST GUARDIAN CORP·Filed 2000·Granted Mar 19, 2002·9 cites·12 claims
- 0760US6001701AProcess for making bipolar having graded or modulated collectorLUCENT TECHNOLOGIES INC·Filed 1997·Granted Dec 14, 1999·26 cites·7 claims
- 0858US6750528B2Bipolar deviceAGERE SYSTEMS INC·Filed 2001·Granted Jun 15, 2004·8 cites·17 claims
- 0936US6815302B2Method of making a bipolar transistor with an oxygen implanted emitter windowAGERE SYSTEMS INC·Filed 2001·Granted Nov 9, 2004·0 cites·20 claims
- 1034US6555871B1Flash memory device having a bipolar transistor formed integral thereto and a method of manufacture thereforAGERE SYSTEMS INC·Filed 2000·Granted Apr 29, 2003·0 cites·20 claims
- 1134US6537887B2Integrated circuit fabricationAGERE SYSTEMS INC·Filed 2000·Granted Mar 25, 2003·0 cites·13 claims
- 1233US6657281B1Bipolar transistor with a low K material in emitter base spacer regionsAGERE SYSTEMS INC·Filed 2000·Granted Dec 2, 2003·0 cites·13 claims
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