Inventor · disambiguated record
Sinan Goktepeli
Also filed as: GOKTEPELI SINAN
56 granted patents·34 pending applications·463 citations·filing 2004–2025
98Inventor score
Files withQUALCOMM INC52FREESCALE SEMICONDUCTOR INC11PSEMI CORP11MURATA MANUFACTURING CO7PEREGRINE SEMICONDUCTOR CORP3
Top patents by PatentIndex Score
90 records- 0199US9780210B1Backside semiconductor growthQUALCOMM INC·Filed 2016·Granted Oct 3, 2017·71 cites·30 claims
- 0298US11387235B2S-contact for SOIPSEMI CORP·Filed 2020·Granted Jul 12, 2022·6 cites·22 claims
- 0398US11081559B1Backside contact of a semiconductor deviceQUALCOMM INC·Filed 2020·Granted Aug 3, 2021·21 cites·20 claims
- 0498US9837412B2S-contact for SOIPEREGRINE SEMICONDUCTOR CORP·Filed 2015·Granted Dec 5, 2017·40 cites·25 claims
- 0598US9755029B1Switch device performance improvement through multisided biased shieldingQUALCOMM INC·Filed 2016·Granted Sep 5, 2017·40 cites·9 claims
- 0698US9362492B2Integrated phase change switchQUALCOMM SWITCH CORP·Filed 2014·Granted Jun 7, 2016·53 cites·19 claims
- 0797US10420171B2Semiconductor devices on two sides of an isolation layerQUALCOMM INC·Filed 2016·Granted Sep 17, 2019·22 cites·15 claims
- 0896US7221006B2GeSOI transistor with low junction current and low junction capacitance and method for making the sameFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted May 22, 2007·48 cites·19 claims
- 0995US9466536B2Semiconductor-on-insulator integrated circuit with back side gateQUALCOMM INC·Filed 2014·Granted Oct 11, 2016·23 cites·21 claims
- 1094US10438950B2S-contact for SOIPSEMI CORP·Filed 2017·Granted Oct 8, 2019·6 cites·20 claims
- 1194US9812580B1Deep trench active device with backside body contactQUALCOMM INC·Filed 2016·Granted Nov 7, 2017·15 cites·25 claims
- 1293US11735589B2S-contact for SOIPSEMI CORP·Filed 2022·Granted Aug 22, 2023·1 cites·21 claims
- 1393US9647209B2Integrated phase change switchQUALCOMM INC·Filed 2016·Granted May 9, 2017·8 cites·20 claims
- 1492US10439565B2Low parasitic capacitance low noise amplifierQUALCOMM INC·Filed 2018·Granted Oct 8, 2019·8 cites·19 claims
- 1592US7323389B2Method of forming a FINFET structureFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jan 29, 2008·23 cites·20 claims
- 1690US2025015082A1S-Contact for SOIPSEMI CORP·Filed 2024·Application pending·0 cites
- 1789US9917062B1Self-aligned transistors for dual-side processingQUALCOMM INC·Filed 2016·Granted Mar 13, 2018·5 cites·13 claims
- 1887US10763257B2S-contact for SOIPSEMI CORP·Filed 2019·Granted Sep 1, 2020·2 cites·19 claims
- 1987US10083963B2Logic circuit block layouts with dual-side processingQUALCOMM INC·Filed 2016·Granted Sep 25, 2018·12 cites·16 claims
- 2086US12100707B2S-contact for SOIPSEMI CORP·Filed 2023·Granted Sep 24, 2024·0 cites·21 claims
- 2186US11081582B2High voltage (HV) metal oxide semiconductor field effect transistor (MOSFET) in semiconductor on insulator (SOI) technologyQUALCOMM INC·Filed 2020·Granted Aug 3, 2021·2 cites·8 claims
- 2284US10522626B2Silicon-on-insulator backside contactsQUALCOMM INC·Filed 2018·Granted Dec 31, 2019·3 cites·10 claims
- 2382US10002838B2Method and apparatus for back-biased switch transistorsQUALCOMM INC·Filed 2016·Granted Jun 19, 2018·3 cites·18 claims
- 2481US2025393268A1Back-gate effect control via dopingMURATA MANUFACTURING CO·Filed 2025·Application pending·0 cites
- 2580US12432991B2Back-gate effect control via dopingMURATA MANUFACTURING CO·Filed 2024·Granted Sep 30, 2025·0 cites·19 claims
- 2680US10896958B2Silicon-on-insulator backside contactsQUALCOMM INC·Filed 2019·Granted Jan 19, 2021·2 cites·10 claims
- 2780US9837302B1Methods of forming a device having semiconductor devices on two sides of a buried dielectric layerQUALCOMM INC·Filed 2016·Granted Dec 5, 2017·3 cites·25 claims
- 2879US11309352B2Integrated acoustic filter on complementary metal oxide semiconductor (CMOS) dieQUALCOMM INC·Filed 2018·Granted Apr 19, 2022·3 cites·16 claims
- 2979US10431558B2Method and apparatus for back-biased switch transistorsQUALCOMM INC·Filed 2018·Granted Oct 1, 2019·2 cites·5 claims
- 3079US10074942B2Switch device performance improvement through multisided biased shieldingQUALCOMM INC·Filed 2017·Granted Sep 11, 2018·2 cites·7 claims
- 3178US7312129B2Method for producing two gates controlling the same channelFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Dec 25, 2007·7 cites·20 claims
- 3276US10707866B1Capacitance balance in dual sided contact switchQUALCOMM INC·Filed 2018·Granted Jul 7, 2020·2 cites·20 claims
- 3375US10475816B2Body current bypass resistorQUALCOMM INC·Filed 2018·Granted Nov 12, 2019·2 cites·18 claims
- 3472US10748934B2Silicon on insulator with multiple semiconductor thicknesses using layer transferQUALCOMM INC·Filed 2018·Granted Aug 18, 2020·1 cites·18 claims
- 3570US10637411B2Transistor layout for improved harmonic performanceQUALCOMM INC·Filed 2018·Granted Apr 28, 2020·2 cites·19 claims
- 3670US7488635B2Semiconductor structure with reduced gate doping and methods for forming thereofFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Feb 10, 2009·3 cites·19 claims
- 3768US10326028B1Complementary metal-oxide-semiconductor (CMOS) voltage-controlled resistorQUALCOMM INC·Filed 2018·Granted Jun 18, 2019·1 cites·20 claims
- 3867US10043752B2Substrate contact using dual sided silicidationQUALCOMM INC·Filed 2016·Granted Aug 7, 2018·1 cites·14 claims
- 3967US9847293B1Utilization of backside silicidation to form dual side contacted capacitorQUALCOMM INC·Filed 2016·Granted Dec 19, 2017·1 cites·8 claims
- 4062US7534674B2Method of making a semiconductor device with a stressorFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted May 19, 2009·1 cites·19 claims
- 4162US2025022775A13-dimensional integrated circuit structures and circuitsMURATA MANUFACTURING CO·Filed 2024·Application pending·0 cites
- 4261US10418465B1Non-volatile memory structure in silicon-on-insulator (SOI) technologyQUALCOMM INC·Filed 2018·Granted Sep 17, 2019·1 cites·18 claims
- 4361US7144784B2Method of forming a semiconductor device and structure thereofFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Dec 5, 2006·9 cites·21 claims
- 4461US2018158822A1S-Contact for SOIPEREGRINE SEMICONDUCTOR CORP·Filed 2017·Application pending·0 cites
- 4561US2025015029A1Multi-die-to-wafer hybrid bondingMURATA MANUFACTURING CO·Filed 2024·Application pending·0 cites
- 4658US7364970B2Method of making a multi-bit non-volatile memory (NVM) cell and structureFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Apr 29, 2008·1 cites·12 claims
- 4758US2020266266A1Semiconductor device with high charge carrier mobility materials on porous siliconQUALCOMM lncorporated·Filed 2020·Application pending·0 cites
- 4857US7157355B2Method of making a semiconductor device having a strained semiconductor layerFREESCALE SMEICONDUCTOR INC·Filed 2004·Granted Jan 2, 2007·6 cites·20 claims
- 4956US10600910B2High voltage (HV) metal oxide semiconductor field effect transistor (MOSFET) in semiconductor on insulator (SOI) technologyQUALCOMM INC·Filed 2018·Granted Mar 24, 2020·0 cites·15 claims
- 5055US2025063780A1Vertical Nano-Pillar Transistor Structures for 3-D ICSMURATA MANUFACTURING CO·Filed 2023·Application pending·0 cites
Showing the top 50 of 90 patent records by PatentIndex Score.
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