Inventor · disambiguated record
Fu-Tsun Tsai
Also filed as: TSAI FU-TSUN
23 granted patents·1 pending application·75 citations·filing 2013–2024
93Inventor score
Top patents by PatentIndex Score
24 records- 0197US9130072B1Backside illuminated image sensor and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Sep 8, 2015·27 cites·20 claims
- 0291US9293490B2Deep trench isolation with air-gap in backside illumination image sensor chipsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 22, 2016·9 cites·20 claims
- 0386US9627426B2Image sensor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 18, 2017·6 cites·20 claims
- 0485US9768221B2Pad structure layout for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Sep 19, 2017·8 cites·19 claims
- 0583US9548329B2Backside illuminated image sensor and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 17, 2017·6 cites·20 claims
- 0683US2025072082A1Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0779US10096672B2Semiconductor device having barrier layer to prevent impurity diffusionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 9, 2018·2 cites·20 claims
- 0878US10608094B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 31, 2020·2 cites·20 claims
- 0977US12159921B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 3, 2024·0 cites·20 claims
- 1077US10056455B1Semiconductor device and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 21, 2018·2 cites·20 claims
- 1177US9728598B2Semiconductor device having barrier layer to prevent impurity diffusionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 8, 2017·2 cites·17 claims
- 1275US9659859B2Metal pad offset for multi-layer metal layoutTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 23, 2017·2 cites·20 claims
- 1375US9318368B2Photomask and method for forming dual STI structure by using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Apr 19, 2016·4 cites·18 claims
- 1474US9490345B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 8, 2016·3 cites·20 claims
- 1571US11437495B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 6, 2022·0 cites·20 claims
- 1665US9450093B2Semiconductor device structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 20, 2016·1 cites·20 claims
- 1764US9093430B2Metal pad offset for multi-layer metal layoutTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 28, 2015·1 cites·21 claims
- 1861US10903336B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 26, 2021·0 cites·16 claims
- 1956US9406499B2Semiconductor wafer structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 2, 2016·0 cites·20 claims
- 2055US11532728B2Method semiconductor device fabrication with improved epitaxial source/drain proximity controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 20, 2022·0 cites·20 claims
- 2154US11271111B2Source/drain structure with barrier in FinFET device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 8, 2022·0 cites·20 claims
- 2253US9666555B2Manufacturing method of forming a semiconductor wafer structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 30, 2017·0 cites·20 claims
- 2351US10361287B2Method for manufacturing semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 23, 2019·0 cites·20 claims
- 2450US10804378B2Method for semiconductor device fabrication with improved epitaxial source/drain proximity controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 13, 2020·0 cites·20 claims
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