Inventor · disambiguated record
Lars-Erik Wernersson
Also filed as: WERNERSSON LARS-ERIK
13 granted patents·4 pending applications·136 citations·filing 2006–2022
90Inventor score
Top patents by PatentIndex Score
17 records- 0195US8063450B2Assembly of nanoscaled field effect transistorsWERNERSSON LARS-ERIK·Filed 2007·Granted Nov 22, 2011·90 cites·20 claims
- 0287US8330143B2Semiconductor nanowire transistorWERNERSSON LARS-ERIK·Filed 2006·Granted Dec 11, 2012·16 cites·12 claims
- 0379US8551834B2Method of producing precision vertical and horizontal layers in a vertical semiconductor structureOHLSSON JONAS·Filed 2012·Granted Oct 8, 2013·4 cites·9 claims
- 0478US8890117B2Nanowire circuit architectureWERNERSSON LARS-ERIK·Filed 2008·Granted Nov 18, 2014·8 cites·16 claims
- 0575US8344361B2Semiconductor nanowire vertical device architectureQUNANO AB·Filed 2006·Granted Jan 1, 2013·6 cites·20 claims
- 0675US8178403B2Method of producing precision vertical and horizontal layers in a vertical semiconductor structureOHLSSON JONAS·Filed 2007·Granted May 15, 2012·5 cites·10 claims
- 0768US9608567B2Transceiver moduleEGARD MIKAEL·Filed 2011·Granted Mar 28, 2017·4 cites·14 claims
- 0866US9117753B2Process for manufacturing a semiconductor device and an intermediate product for the manufacture of a semiconductor deviceEGARD MIKAEL·Filed 2012·Granted Aug 25, 2015·2 cites·20 claims
- 0963US10361284B2Method for vertical gate-last processWERNERSSON LARS ERIK·Filed 2016·Granted Jul 23, 2019·1 cites·15 claims
- 1054US9087896B2Method of producing precision vertical and horizontal layers in a vertical semiconductor structureOHLSSON JONAS·Filed 2013·Granted Jul 21, 2015·0 cites·5 claims
- 1144US2024222372A1Semiconductor structure forming a plurality of transistorsC2AMPS AB·Filed 2022·Application pending·0 cites
- 1243US2011089477A1Nanostructured mos capacitorQUNANO AB·Filed 2009·Application pending·0 cites
- 1338US2014048851A1Substrate comprising si-base and inas-layerWERNERSSON LARS-ERIK·Filed 2012·Application pending·0 cites
- 1434US10090292B2Radial nanowire Esaki diode devices and methodsQUNANO AB·Filed 2013·Granted Oct 2, 2018·0 cites·6 claims
- 1533US12402375B2Asymmetric vertical nanowire MOSFET having asymmetric nanowire geometry near metal gate and method of fabricating thereofC2AMPS AB·Filed 2020·Granted Aug 26, 2025·0 cites·8 claims
- 1632US11621346B2Vertical metal oxide semiconductor field effect transistor (MOSFET) and a method of forming the sameC2AMPS AB·Filed 2018·Granted Apr 4, 2023·0 cites·11 claims
- 1724US2018358225A1Method for producing complimentary devicesWERNERSSON LARS ERIK·Filed 2016·Application pending·0 cites
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