Inventor · disambiguated record
Weize Xiong
Also filed as: XIONG WEIZE · XIONG WEIZE W
19 granted patents·11 pending applications·159 citations·filing 2004–2014
94Inventor score
Top patents by PatentIndex Score
30 records- 0195US7638843B2Integrating high performance and low power multi-gate devicesTEXAS INSTRUMENTS INC·Filed 2006·Granted Dec 29, 2009·53 cites·14 claims
- 0293US7683417B2Memory device with memory cell including MuGFET and fin capacitorTEXAS INSTRUMENTS INC·Filed 2007·Granted Mar 23, 2010·25 cites·7 claims
- 0389US7094650B2Gate electrode for FinFET deviceTEXAS INSTRUMENTS INC·Filed 2005·Granted Aug 22, 2006·20 cites·20 claims
- 0487US8138035B2Method for forming integrated circuits with aligned (100) NMOS and (110) PMOS FinFET sidewall channelsXIONG WEIZE·Filed 2011·Granted Mar 20, 2012·7 cites·14 claims
- 0583US8114727B2Disposable spacer integration with stress memorization technique and silicon-germaniumXIONG WEIZE·Filed 2009·Granted Feb 14, 2012·10 cites·11 claims
- 0682US7939393B2Method of adjusting FDSOI threshold voltage through oxide charges generation in the buried oxideTEXAS INSTRUMENTS INC·Filed 2008·Granted May 10, 2011·8 cites·27 claims
- 0780US9053966B2Integrated circuits with aligned (100) NMOS and (110) PMOS finFET sidewall channelsTEXAS INSTRUMENTS INC·Filed 2014·Granted Jun 9, 2015·3 cites·2 claims
- 0880US8872220B2Integrated circuits with aligned (100) NMOS and (110) PMOS FinFET sidewall channelsTEXAS INSTRUMENTS INC·Filed 2013·Granted Oct 28, 2014·3 cites·20 claims
- 0975US7582521B2Dual metal gates for mugfet deviceTEXAS INSTRUMENTS INC·Filed 2007·Granted Sep 1, 2009·6 cites·18 claims
- 1066US8377772B2CMOS integration method for optimal IO transistor VTTEXAS INSTRUMENTS INC·Filed 2010·Granted Feb 19, 2013·2 cites·16 claims
- 1165US8470707B2Silicide methodXIONG WEIZE·Filed 2011·Granted Jun 25, 2013·2 cites·13 claims
- 1265US8410519B2Integrated circuits with aligned (100) NMOS and (110) PMOS FinFET sidewall channelsXIONG WEIZE·Filed 2012·Granted Apr 2, 2013·1 cites·19 claims
- 1365US7238567B2System and method for integrating low schottky barrier metal source/drainTEXAS INSTRUMENTS INC·Filed 2004·Granted Jul 3, 2007·12 cites·13 claims
- 1462US7897994B2Method of making (100) NMOS and (110) PMOS sidewall surface on the same fin orientation for multiple gate MOSFET with DSB substrateTEXAS INSTRUMENTS INC·Filed 2007·Granted Mar 1, 2011·1 cites·14 claims
- 1560US7960234B2Multiple-gate MOSFET device and associated manufacturing methodsTEXAS INSTRUMENTS INC·Filed 2007·Granted Jun 14, 2011·2 cites·14 claims
- 1660US7253043B2Short channel semiconductor device fabricationTEXAS INSTRUMENTS INC·Filed 2005·Granted Aug 7, 2007·2 cites·20 claims
- 1758US8067792B2Memory device with memory cell including MuGFET and FIN capacitorXIONG WEIZE·Filed 2009·Granted Nov 29, 2011·1 cites·14 claims
- 1850US8581317B2SOI MuGFETs having single gate electrode levelTIGELAAR HOWARD·Filed 2008·Granted Nov 12, 2013·1 cites·19 claims
- 1949US2011306170A1Novel Method to Improve Performance by Enhancing Poly Gate Doping Concentration in an Embedded SiGe PMOS ProcessWANG XIN·Filed 2009·Application pending·0 cites
- 2046US8043947B2Method to eliminate re-crystallization border defects generated during solid phase epitaxy of a DSB substrateTEXAS INSTRUMENTS INC·Filed 2007·Granted Oct 25, 2011·0 cites·15 claims
- 2145US2009098702A1Method to Form CMOS Circuits Using Optimized SidewallsTEXAS INSTRUMENTS INC·Filed 2008·Application pending·0 cites
- 2244US2009096055A1Method to form cmos circuits with sub 50nm sti structures using selective epitaxial silicon post sti etchTEXAS INSTRUMENTS INC·Filed 2008·Application pending·0 cites
- 2341US2008290414A1Integrating strain engineering to maximize system-on-a-chip performanceTEXAS INSTRUMENTS INC·Filed 2007·Application pending·0 cites
- 2441US2009142915A1Gate structure and method of forming the sameXIONG WEIZE·Filed 2007·Application pending·0 cites
- 2540US2008014689A1Method for making planar nanowire surround gate mosfetTEXAS INSTRUMENTS INC·Filed 2006·Application pending·0 cites
- 2640US2008303095A1Varying mugfet width to adjust device characteristicsXIONG WEIZE·Filed 2007·Application pending·0 cites
- 2739US2007257319A1Integrating high performance and low power multi-gate devicesTEXAS INSTRUMENTS INC·Filed 2006·Application pending·0 cites
- 2836US2012280324A1Sram structure and process with improved stabilityXIONG WEIZE·Filed 2011·Application pending·0 cites
- 2934US2006286759A1Metal oxide semiconductor (MOS) device having both an accumulation and a enhancement mode transistor device on a similar substrate and a method of manufacture thereforTEXAS INSTRUMENTS INC·Filed 2005·Application pending·0 cites
- 3033US2012119824A1Bias voltage sourceSESHADRI ANAND·Filed 2011·Application pending·0 cites
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