Inventor · disambiguated record
Guy Wicker
Also filed as: WICKER GUY · WICKER GUY C · WICKER GUY CHARLES
58 granted patents·9 pending applications·7,688 citations·filing 1986–2017
99Inventor score
Top patents by PatentIndex Score
67 records- 0199US6673700B2Reduced area intersection between electrode and programming elementOVONYX INC·Filed 2001·Granted Jan 6, 2004·648 cites·14 claims
- 0299US6621095B2Method to enhance performance of thermal resistor deviceOVONYX INC·Filed 2001·Granted Sep 16, 2003·480 cites·13 claims
- 0399US6597009B2Reduced contact area of sidewall conductorINTEL CORP·Filed 2002·Granted Jul 22, 2003·520 cites·6 claims
- 0499US6429064B1Reduced contact area of sidewall conductorINTEL CORP·Filed 2000·Granted Aug 6, 2002·529 cites·13 claims
- 0599US6339544B1Method to enhance performance of thermal resistor deviceINTEL CORP·Filed 2000·Granted Jan 15, 2002·756 cites·22 claims
- 0699US6314014B1Programmable resistance memory arrays with reference cellsOVONYX INC·Filed 1999·Granted Nov 6, 2001·513 cites·99 claims
- 0799US5714768ASecond-layer phase change memory array on top of a logic deviceENERGY CONVERSION DEVICES INC·Filed 1995·Granted Feb 3, 1998·540 cites·23 claims
- 0899US5414271AElectrically erasable memory elements having improved set resistance stabilityENERGY CONVERSION DEVICES INC·Filed 1991·Granted May 9, 1995·448 cites·32 claims
- 0999US5341328AElectrically erasable memory elements having reduced switching current requirements and increased write/erase cycle lifeENERGY CONVERSION DEVICES INC·Filed 1992·Granted Aug 23, 1994·403 cites·30 claims
- 1099US5166758AElectrically erasable phase change memoryENERGY CONVERSION DEVICES INC·Filed 1991·Granted Nov 24, 1992·861 cites·28 claims
- 1198US6969866B1Electrically programmable memory element with improved contactsOVONYX INC·Filed 1999·Granted Nov 29, 2005·196 cites·33 claims
- 1298US5694054AIntegrated drivers for flat panel displays employing chalcogenide logic elementsENERGY CONVERSION DEVICES INC·Filed 1995·Granted Dec 2, 1997·205 cites·19 claims
- 1398US5159661AVertically interconnected parallel distributed processorENERGY CONVERSION DEVICES INC·Filed 1990·Granted Oct 27, 1992·249 cites·33 claims
- 1497US7839674B2Programmable matrix array with chalcogenide materialOVONYX INC·Filed 2008·Granted Nov 23, 2010·51 cites·23 claims
- 1597US7646630B2Programmable matrix array with chalcogenide materialOVONYX INC·Filed 2005·Granted Jan 12, 2010·63 cites·23 claims
- 1697US4766471AThin film electro-optical devicesENERGY CONVERSION DEVICES INC·Filed 1986·Granted Aug 23, 1988·299 cites·9 claims
- 1796US10147876B1Phase change memory electrode with multiple thermal interfacesSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Dec 4, 2018·23 cites·18 claims
- 1896US7499315B2Programmable matrix array with chalcogenide materialOVONYX INC·Filed 2005·Granted Mar 3, 2009·47 cites·108 claims
- 1996US6867425B2Lateral phase change memory and method thereforINTEL CORP·Filed 2002·Granted Mar 15, 2005·87 cites·22 claims
- 2096US6075719AMethod of programming phase-change memory elementENERGY CONVERSION DEVICES INC·Filed 1999·Granted Jun 13, 2000·179 cites·18 claims
- 2195US6608773B2Programmable resistance memory arrayOVONYX INC·Filed 2001·Granted Aug 19, 2003·82 cites·11 claims
- 2293US7864567B2Programming a normally single phase chalcogenide material for use as a memory of FPLAOVONYX INC·Filed 2008·Granted Jan 4, 2011·25 cites·29 claims
- 2393US7205562B2Phase change memory and method thereforINTEL CORP·Filed 2002·Granted Apr 17, 2007·45 cites·24 claims
- 2490US7414883B2Programming a normally single phase chalcogenide material for use as a memory or FPLAINTEL CORP·Filed 2006·Granted Aug 19, 2008·19 cites·32 claims
- 2589US6567296B1Memory deviceST MICROELECTRONICS SRL·Filed 2001·Granted May 20, 2003·54 cites·20 claims
- 2687US8344348B2Memory deviceOVONYX INC·Filed 2008·Granted Jan 1, 2013·15 cites·30 claims
- 2786US7649191B2Forming a carbon layer between phase change layers of a phase change memoryINTEL CORP·Filed 2007·Granted Jan 19, 2010·11 cites·21 claims
- 2886US7339815B2Method of operating a programmable resistance memory arrayOVONYX INC·Filed 2006·Granted Mar 4, 2008·14 cites·6 claims
- 2984US8134860B2Shunted phase change memoryWICKER GUY·Filed 2010·Granted Mar 13, 2012·5 cites·11 claims
- 3084US5180690AMethod of forming a layer of doped crystalline semiconductor alloy materialENERGY CONVERSION DEVICES INC·Filed 1990·Granted Jan 19, 1993·98 cites·32 claims
- 3182US7282730B2Forming a carbon layer between phase change layers of a phase change memoryINTEL CORP·Filed 2005·Granted Oct 16, 2007·6 cites·8 claims
- 3279US5694146AActive matrix LCD array employing thin film chalcogenide threshold switches to isolate individual pixelsENERGY CONVERSION DEVICES INC·Filed 1994·Granted Dec 2, 1997·40 cites·20 claims
- 3378US9343676B2Heating phase change materialMICRON TECHNOLOGY INC·Filed 2014·Granted May 17, 2016·2 cites·18 claims
- 3478US7504675B2Phase change memories with improved programming characteristicsINTEL CORP·Filed 2007·Granted Mar 17, 2009·7 cites·13 claims
- 3577US7242019B2Shunted phase change memoryINTEL CORP·Filed 2002·Granted Jul 10, 2007·14 cites·26 claims
- 3677US6987688B2Die customization using programmable resistance memory elementsOVONYX INC·Filed 2003·Granted Jan 17, 2006·17 cites·11 claims
- 3775US7589364B2Electrically rewritable non-volatile memory element and method of manufacturing the sameELPIDA MEMORY INC·Filed 2005·Granted Sep 15, 2009·7 cites·3 claims
- 3874US7525117B2Chalcogenide devices and materials having reduced germanium or telluruim contentOVONYX INC·Filed 2005·Granted Apr 28, 2009·6 cites·15 claims
- 3974US7119355B2Lateral phase change memory and method thereforINTEL CORP·Filed 2005·Granted Oct 10, 2006·4 cites·10 claims
- 4074US5757446ALiquid crystal display matrix array employing ovonic threshold switching devices to isolate individual pixelsENERGY CONVERSION DEVICES INC·Filed 1995·Granted May 26, 1998·47 cites·26 claims
- 4171US7423897B2Method of operating a programmable resistance memory arrayOVONYX INC·Filed 2004·Granted Sep 9, 2008·15 cites·19 claims
- 4270US7358521B2Lateral phase change memory and method thereforINTEL CORP·Filed 2006·Granted Apr 15, 2008·3 cites·10 claims
- 4368US4792859ADigitizing wand adapted for manual and automatic operationOVONIC IMAGING SYSTEMS INC·Filed 1987·Granted Dec 20, 1988·26 cites·2 claims
- 4467US7916514B2Shunted phase change memoryINTEL CORP·Filed 2007·Granted Mar 29, 2011·2 cites·11 claims
- 4564US8379439B2Programmable matrix array with chalcogenide materialOVONYX INC·Filed 2009·Granted Feb 19, 2013·4 cites·12 claims
- 4664US6770524B2Method to enhance performance of thermal resistor deviceINTEL CORP·Filed 2003·Granted Aug 3, 2004·6 cites·3 claims
- 4763US7407829B2Electrically programmable memory element with improved contactsOVONYX INC·Filed 2004·Granted Aug 5, 2008·9 cites·64 claims
- 4862US8217379B2Arsenic-containing variable resistance materialsSCHELL CARL·Filed 2009·Granted Jul 10, 2012·0 cites·27 claims
- 4962US7786462B2Chalcogenide devices exhibiting stable operation from the as-fabricated stateOVONYX INC·Filed 2007·Granted Aug 31, 2010·1 cites·9 claims
- 5061US7816660B2Lateral phase change memoryST MICROELECTRONICS SRL·Filed 2006·Granted Oct 19, 2010·1 cites·28 claims
Showing the top 50 of 67 patent records by PatentIndex Score.
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