Inventor · disambiguated record
Sung-Kweon Baek
Also filed as: BAEK SUNG-KWEON
15 granted patents·8 pending applications·45 citations·filing 2006–2024
90Inventor score
Top patents by PatentIndex Score
23 records- 0187US9368589B2Semiconductor device and semiconductor moduleSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jun 14, 2016·10 cites·25 claims
- 0283US10685708B2Semiconductor device including volatile and non-volatile memory cellsSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 16, 2020·4 cites·19 claims
- 0379US7585729B2Method of manufacturing a non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 8, 2009·6 cites·33 claims
- 0475US7608509B2Method of manufacturing a flash memory device having compensation members formed on edge portions of a tunnel oxide layerSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 27, 2009·6 cites·14 claims
- 0572US7473959B2Non-volatile semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 6, 2009·5 cites·10 claims
- 0671US8008154B2Methods of forming impurity containing insulating films and flash memory devices including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 30, 2011·3 cites·21 claims
- 0769US8785267B2Methods of manufacturing semiconductor devices including transistorsBAEK SUNG-KWEON·Filed 2012·Granted Jul 22, 2014·3 cites·17 claims
- 0869US7893482B2Semiconductor devices having tunnel and gate insulating layersSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Feb 22, 2011·3 cites·10 claims
- 0966US2024306384A1Semiconductor devices, nonvolatile memory devices including the same, electronic systems including the same, and methods for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1063US8330207B2Flash memory device including multilayer tunnel insulator and method of fabricating the sameBAEK SUNG-KWEON·Filed 2008·Granted Dec 11, 2012·3 cites·9 claims
- 1161US9443735B2Method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Sep 13, 2016·1 cites·11 claims
- 1259US12016177B2Semiconductor devices, nonvolatile memory devices including the same, electronic systems including the same, and methods for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jun 18, 2024·0 cites·17 claims
- 1359US7670916B2Semiconductor device doped with Sb, Ga, or Bi and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Mar 2, 2010·1 cites·10 claims
- 1451US7537993B2Methods of forming semiconductor devices having tunnel and gate insulating layersSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 26, 2009·0 cites·12 claims
- 1549US2009179252A1Flash memory device including multilayer tunnel insulator and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 1648US7799639B2Methods of fabricating non-volatile memory devices including a chlorine cured tunnel oxide layerSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 21, 2010·0 cites·17 claims
- 1748US7531865B2Semiconductor device doped with Sb, Ga or Bi and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 12, 2009·0 cites·6 claims
- 1847US2009203190A1Method of forming a mask stack pattern and method of manufacturing a flash memory device including an active area having rounded cornersSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 1944US2009072294A1Method of manufacturing a non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 2043US2008073690A1Flash memory device including multilayer tunnel insulator and method of fabricating the sameBAEK SUNG-KWEON·Filed 2006·Application pending·0 cites
- 2142US2008085584A1Oxidation/heat treatment methods of manufacturing non-volatile memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 2240US2014035058A1Semiconductor Devices and Methods of Manufacturing the SameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
- 2332US2015228722A1Semiconductor device including fin-type field effect transistorSAMSUNG ELECTRONICS CO LTD·Filed 2015·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →