Inventor · disambiguated record
Michimasa Miyanaga
Also filed as: MIYANAGA MICHIMASA
33 granted patents·13 pending applications·453 citations·filing 1998–2015
96Inventor score
Files withSUMITOMO ELECTRIC INDUSTRIES32SATOH ISSEI5MIYANAGA MICHIMASA3MIZUHARA NAHO3ARAKAWA SATOSHI1
Top patents by PatentIndex Score
46 records- 0199US7390359B2Nitride semiconductor waferSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted Jun 24, 2008·276 cites·6 claims
- 0296US8404042B2Group-III nitride crystal compositeMIZUHARA NAHO·Filed 2012·Granted Mar 26, 2013·28 cites·20 claims
- 0391US8258051B2Method of manufacturing III-nitride crystal, and semiconductor device utilizing the crystalMIZUHARA NAHO·Filed 2009·Granted Sep 4, 2012·14 cites·8 claims
- 0491US6800360B2Porous ceramics and method of preparing the same as well as microstrip substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2002·Granted Oct 5, 2004·52 cites·17 claims
- 0583US7995267B2Wavelength converter manufacturing method and wavelength converterSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Granted Aug 9, 2011·7 cites·7 claims
- 0682US8872309B2Composite of III-nitride crystal on laterally stacked substratesSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Oct 28, 2014·3 cites·3 claims
- 0781US8709923B2Method of manufacturing III-nitride crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Apr 29, 2014·3 cites·6 claims
- 0876US6544917B1Si3N4 ceramic, Si-base composition for its production, and method for its productionSUMITOMO ELECTRIC INDUSTRIES·Filed 2000·Granted Apr 8, 2003·14 cites·12 claims
- 0975US8361226B2III-nitride single-crystal growth methodSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Granted Jan 29, 2013·2 cites·10 claims
- 1074US8367577B2Thin film of aluminum nitride and process for producing the thin film of aluminum nitrideSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Granted Feb 5, 2013·1 cites·5 claims
- 1172US8702865B2AlxGa1-xN crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2012·Granted Apr 22, 2014·2 cites·2 claims
- 1266US9064706B2Composite of III-nitride crystal on laterally stacked substratesSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Jun 23, 2015·1 cites·4 claims
- 1366US8259386B2Wavelength conversion element and method for manufacturing wavelength conversion elementSATOH ISSEI·Filed 2009·Granted Sep 4, 2012·2 cites·6 claims
- 1465US8323402B2Method for growing aluminum nitride crystal, process for producing aluminum nitride crystal, and aluminum nitride crystalTANIZAKI KEISUKE·Filed 2008·Granted Dec 4, 2012·3 cites·15 claims
- 1561US8715414B2Process for producing Si(1-v-w-x)CwAlxNv base material, process for producing epitaxial wafer, Si(1-v-w-x)CwAlxNv base material, and epitaxial waferSATOH ISSEI·Filed 2009·Granted May 6, 2014·1 cites·9 claims
- 1660US6143677ASilicon nitride sinter having high thermal conductivity and process for preparing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 1998·Granted Nov 7, 2000·16 cites·10 claims
- 1758US8357597B2Process for producing Si(1-v-w-x)CwAlxNv base material, process for producing epitaxial wafer, Si(1-v-w-x)CwAlxNv base material, and epitaxial waferSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Granted Jan 22, 2013·0 cites·3 claims
- 1857US8293011B2Method for growing group III nitride semiconductor crystal and growing device for group III nitride semiconductor crystalMIYANAGA MICHIMASA·Filed 2008·Granted Oct 23, 2012·2 cites·5 claims
- 1957US7041366B2Porous silicon nitride ceramics and method for producing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2002·Granted May 9, 2006·3 cites·7 claims
- 2055US8829658B2Method of manufacturing nitride substrate, and nitride substrateARAKAWA SATOSHI·Filed 2009·Granted Sep 9, 2014·0 cites·3 claims
- 2154US8540817B2Method of manufacturing a Si(1-v-w-x)CwAlxNv substrate, method of manufacturing an epitaxial wafer, Si(1-v-w-x)CwAlxNv substrate, and epitaxial waferSATOH ISSEI·Filed 2009·Granted Sep 24, 2013·0 cites·4 claims
- 2254US2014357067A1Method of manufacturing nitride substrate, and nitride substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Application pending·0 cites
- 2353US8937339B2Si(1-V-W-X)CWAlXNV substrate, and epitaxial waferSUMITOMO ELECTRIC INDUSTRIES·Filed 2012·Granted Jan 20, 2015·0 cites·2 claims
- 2453US6001759ASilicon nitride sintered body, method of preparing the same and nitrided compactSUMITOMO ELECTRIC INDUSTRIES·Filed 1998·Granted Dec 14, 1999·12 cites·19 claims
- 2553US2011110840A1Method for producing group iii-nitride crystal and group iii-nitride crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Application pending·0 cites
- 2652US8377204B2Group III nitride single crystal and method of its growthSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted Feb 19, 2013·0 cites·1 claims
- 2752US2011042684A1Method of Growing AlN Crystals, and AlN LaminateSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Application pending·0 cites
- 2851US8363326B2AlxGa(1-x)N single crystal, method of producing AlxGa(1-x)N single crystal, and optical lensSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Granted Jan 29, 2013·0 cites·9 claims
- 2951US6617272B2Si3N4 sintered body with high thermal conductivity and method for producing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2001·Granted Sep 9, 2003·3 cites·6 claims
- 3050US8293012B2Method for growing AlxGa1-xN crystal, and AlxGa1-xN crystal substrateMIYANAGA MICHIMASA·Filed 2007·Granted Oct 23, 2012·0 cites·6 claims
- 3149US8591653B2Compound semiconductor single-crystal manufacturing device and manufacturing methodSATOH ISSEI·Filed 2009·Granted Nov 26, 2013·0 cites·11 claims
- 3249US2011076453A1AlxGa1-xN Single Crystal and Electromagnetic Wave Transmission BodySUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Application pending·0 cites
- 3348US2010307405A1Method for Growing AlxGa1-xN Single CrystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Application pending·0 cites
- 3448US2011114016A1AlGaN BULK CRYSTAL MANUFACTURING METHOD AND AlGaN SUBSTRATE MANUFACTURING METHODSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Application pending·0 cites
- 3547US2010242833A1AlN Crystal and Method of Its GrowthSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Application pending·0 cites
- 3646US2011104438A1AlxGa(1-x)N SINGLE CRYSTAL, METHOD OF PRODUCING AlxGa(1-x)N SINGLE CRYSTAL, AND OPTICAL COMPONENTSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Application pending·0 cites
- 3745US8470090B2AlN crystal and method for growing the same, and AlN crystal substrateMIZUHARA NAHO·Filed 2006·Granted Jun 25, 2013·0 cites·3 claims
- 3845US2009280354A1Process for Producing Substrate of AlN Crystal, Method of Growing AlN Crystal, and Substrate of AlN CrystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Application pending·0 cites
- 3944US2009087645A1Method for Manufacturing Aluminum Nitride Crystal, Aluminum Nitride Crystal, Aluminum Nitride Crystal Substrate and Semiconductor DeviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Application pending·0 cites
- 4043US9254519B2Composite material, part for continuous casting, continuous casting nozzle, continuous casting method, cast material, and magnesium alloy cast coil materialMIYANAGA MICHIMASA·Filed 2011·Granted Feb 9, 2016·0 cites·18 claims
- 4143US2008217745A1Nitride Semiconductor WaferSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Application pending·0 cites
- 4241US9222160B2Coil material and method for manufacturing the sameNUMANO MASATADA·Filed 2011·Granted Dec 29, 2015·0 cites·38 claims
- 4341US2017283915A1Magnesium alloy, magnesium alloy sheet, magnesium alloy structural member, and method for producing magnesium alloySUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Application pending·0 cites
- 4437US8613802B2Nitride semiconductor crystal manufacturing apparatus, nitride semiconductor crystal manufacturing method, and nitride semiconductor crystalSATOH ISSEI·Filed 2010·Granted Dec 24, 2013·0 cites·3 claims
- 4537US6599637B1Silicon nitride composite substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 1999·Granted Jul 29, 2003·8 cites·9 claims
- 4636US2011265709A1Nitride Semiconductor Crystal Manufacturing Method, Nitride Semiconductor Crystal, and Nitride Semiconductor Crystal Manufacturing ApparatusSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Application pending·0 cites
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