Inventor · disambiguated record
Hou-Ju Li
Also filed as: LI HOU-JU
11 granted patents·2 pending applications·613 citations·filing 2009–2023
88Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD9CHUANG HARRY1LI HOU-JU1SHEN CHUN-LIANG1TAIWAN SEMICONDUCTOR MFG1
Top patents by PatentIndex Score
13 records- 0195US8729634B2FinFET with high mobility and strain channelSHEN CHUN-LIANG·Filed 2012·Granted May 20, 2014·581 cites·20 claims
- 0292US10115808B2finFET device and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 30, 2018·6 cites·20 claims
- 0391US11450757B2FinFET device and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·2 cites·20 claims
- 0489US10770570B2FinFET device and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 8, 2020·4 cites·20 claims
- 0588US8125051B2Device layout for gate last processCHUANG HARRY·Filed 2009·Granted Feb 28, 2012·16 cites·20 claims
- 0685US11776911B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 3, 2023·1 cites·20 claims
- 0774US2023387024A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 0868US9368628B2FinFET with high mobility and strain channelLI HOU-JU·Filed 2012·Granted Jun 14, 2016·3 cites·21 claims
- 0957US12205849B2Semiconductor device structure with source/drain structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 21, 2025·0 cites·20 claims
- 1055US11024582B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 1, 2021·0 cites·20 claims
- 1153US9997629B2FinFET with high mobility and strain channelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 12, 2018·0 cites·19 claims
- 1247US11264380B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 1, 2022·0 cites·20 claims
- 1345US2010078728A1Raise s/d for gate-last ild0 gap fillingTAIWAN SEMICONDUCTOR MFG·Filed 2009·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →