Inventor · disambiguated record
Mu-Hui Park
Also filed as: PARK MU-HUI
24 granted patents·4 pending applications·144 citations·filing 2005–2021
95Inventor score
Top patents by PatentIndex Score
28 records- 0196US7349245B2Non-volatile phase-change memory device and associated program-suspend-read operationSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 25, 2008·55 cites·42 claims
- 0291US7656719B2Phase change memory device generating program current and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 2, 2010·14 cites·11 claims
- 0386US9805807B2Operation method operating nonvolatile memory device having plurality of memory blocksSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Oct 31, 2017·8 cites·7 claims
- 0485US8320171B2Phase change memory devices and memory systems including the samePARK MU-HUI·Filed 2010·Granted Nov 27, 2012·13 cites·15 claims
- 0584US8259511B2Phase change memory device generating program current and method thereofCHO BEAK-HYUNG·Filed 2011·Granted Sep 4, 2012·5 cites·12 claims
- 0684US7548467B2Bias voltage generator and method generating bias voltage for semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 16, 2009·14 cites·20 claims
- 0783US10102897B2Memory device and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 16, 2018·6 cites·20 claims
- 0874US9058874B2Sensing circuits and phase change memory devices including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jun 16, 2015·5 cites·21 claims
- 0973US10083746B2Memory device and method for operating memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 25, 2018·3 cites·20 claims
- 1073US9478302B2Nonvolatile memory device and method for sensing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Oct 25, 2016·3 cites·14 claims
- 1173US7986551B2Phase change random access memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Jul 26, 2011·4 cites·5 claims
- 1269US9728254B2Nonvolatile memory device and method for sensing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Aug 8, 2017·2 cites·8 claims
- 1368US9368201B2Nonvolatile memory device having resistive memory cell and method sensing data in sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jun 14, 2016·3 cites·20 claims
- 1466US9627056B2Resistive memory device and memory system including resistive memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 18, 2017·2 cites·20 claims
- 1565US10388699B2Three-dimensional semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Aug 20, 2019·1 cites·15 claims
- 1662US10546637B2Method of operating resistive memory device reducing read disturbanceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jan 28, 2020·1 cites·17 claims
- 1761US11948631B2Memory device and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Apr 2, 2024·0 cites·11 claims
- 1860US7936612B2Phase change memory device generating program current and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted May 3, 2011·0 cites·16 claims
- 1957US7639558B2Phase change random access memory (PRAM) deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 29, 2009·3 cites·20 claims
- 2054US10784311B2Three-dimensional semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Sep 22, 2020·0 cites·20 claims
- 2154US7672156B2Phase change random access memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 2, 2010·2 cites·21 claims
- 2249US10770138B2Method of operating resistive memory device reducing read disturbanceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Sep 8, 2020·0 cites·20 claims
- 2345US11056187B2Memory device with read-write-read memory controllerSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jul 6, 2021·0 cites·8 claims
- 2440US2010220522A1Phase change random access memory and method of controlling read operation thereofSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
- 2539US9361977B2Reliable read operation for nonvolatile memory device with resistance material that reads data based on reference currentSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jun 7, 2016·0 cites·20 claims
- 2638US2007091665A1Phase change random access memory and method of controlling read operation thereofOH HYUNG-ROK·Filed 2006·Application pending·0 cites
- 2737US2008291715A1Nonvolatile memory device using variable resistive materialsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 2835US2010124101A1Phase-change random access memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
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