Inventor · disambiguated record
Pin-Ren Dai
Also filed as: DAI PIN-REN
49 granted patents·4 pending applications·102 citations·filing 2017–2025
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD53
Top patents by PatentIndex Score
53 records- 0198US10276794B1Memory device and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·18 cites·20 claims
- 0297US11171284B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 9, 2021·4 cites·20 claims
- 0397US10937652B1Method and structure of cut end with self-aligned double patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 2, 2021·11 cites·20 claims
- 0497US10644231B2Memory device and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 5, 2020·22 cites·20 claims
- 0596US12127489B2Integrated circuit structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 22, 2024·1 cites·20 claims
- 0694US11848207B2Method and structure of cut end with self-aligned double patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 19, 2023·2 cites·20 claims
- 0794US11683988B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 20, 2023·2 cites·20 claims
- 0894US10700264B2Memory device and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 30, 2020·4 cites·20 claims
- 0994US10355198B2Memory device and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 16, 2019·8 cites·20 claims
- 1092US10636963B2Magnetic tunnel junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 28, 2020·7 cites·20 claims
- 1191US10270028B1Memory device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·7 cites·20 claims
- 1290US12219880B2Integrated circuit deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Feb 4, 2025·0 cites·20 claims
- 1390US10985312B2Methods of fabricating magneto-resistive random-access memory (MRAM) devices with self-aligned top electrode via and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 20, 2021·2 cites·20 claims
- 1488US11189658B2Magnetic random access memory and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 30, 2021·4 cites·20 claims
- 1587US12069958B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 20, 2024·0 cites·20 claims
- 1687US2025308899A1Method and structure of cut end with self-aligned double patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1786US12368046B2Method and structure of cut end with self-aligned double patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 22, 2025·0 cites·20 claims
- 1886US2025275482A1Magnetic tunnel junction devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1986US2025308932A1Methods of Etching Metals in Semiconductor DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2085US12354881B2Methods of etching metals in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 8, 2025·0 cites·20 claims
- 2185US12302761B2Magnetic tunnel junction devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
- 2284US11171052B2Methods of forming interconnect structures with selectively deposited pillars and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 9, 2021·3 cites·20 claims
- 2383US12464954B2Magneto-resistive random-access memory (MRAM) devices with self-aligned top electrode viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 4, 2025·0 cites·20 claims
- 2483US12074059B2Semiconductor arrangement and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 27, 2024·0 cites·20 claims
- 2583US11158518B2Methods of etching metals in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 26, 2021·2 cites·20 claims
- 2681US11031284B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 8, 2021·1 cites·20 claims
- 2781US10971682B2Method for fabricating memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 6, 2021·1 cites·20 claims
- 2880US11854836B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 26, 2023·0 cites·20 claims
- 2980US10741417B2Method for forming interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 11, 2020·2 cites·20 claims
- 3080US2025280735A1Structure and Method for an MRAM Device with a Multi-Layer Top ElectrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3179US11856866B2Magnetic tunnel junction devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 3278US12310255B2Structure and method for an MRAM device with a multi-layer top electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 20, 2025·0 cites·20 claims
- 3378US11849645B2Integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 19, 2023·0 cites·20 claims
- 3477US11588107B2Integrated circuit structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 21, 2023·0 cites·20 claims
- 3576US11776845B2Semiconductor arrangement and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 3, 2023·0 cites·20 claims
- 3675US11915943B2Methods of etching metals in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 27, 2024·0 cites·20 claims
- 3774US11569096B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 31, 2023·0 cites·20 claims
- 3873US11723282B2Magneto-resistive random-access memory (MRAM) devices with self-aligned top electrode viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 8, 2023·0 cites·20 claims
- 3972US11329216B2Magnetic tunnel junction devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 10, 2022·0 cites·20 claims
- 4072US11063217B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 13, 2021·0 cites·20 claims
- 4172US10685869B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 16, 2020·1 cites·20 claims
- 4271US11355701B2Integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·0 cites·20 claims
- 4371US11018027B2Interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 25, 2021·0 cites·20 claims
- 4469US11189524B2Semiconductor arrangement and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 30, 2021·0 cites·20 claims
- 4569US10879458B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 29, 2020·0 cites·20 claims
- 4668US10734580B2Memory device and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 4, 2020·0 cites·20 claims
- 4766US10964888B2Magnetic tunnel junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 30, 2021·0 cites·20 claims
- 4863US11563167B2Structure and method for an MRAM device with a multi-layer top electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 24, 2023·0 cites·20 claims
- 4961US10756258B2Memory device and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 25, 2020·0 cites·20 claims
- 5052US10622551B2Manufacturing techniques and devices for magnetic tunnel junction devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 14, 2020·0 cites·20 claims
Showing the top 50 of 53 patent records by PatentIndex Score.
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