Inventor · disambiguated record
John Kouvetakis
Also filed as: KOUVETAKIS JOHN
23 granted patents·10 pending applications·1,844 citations·filing 1994–2012
96Inventor score
Files withUNIV ARIZONA14KOUVETAKIS JOHN11UNIV ARIZONA STATE3ARIZONA BOARD OF REGENTA A BOD1ARIZONA BOARD OF REGENTS A COR1
Top patents by PatentIndex Score
33 records- 0197US7598513B2SixSnyGe1-x-y and related alloy heterostructures based on Si, Ge and SnUNIV ARIZONA STATE·Filed 2004·Granted Oct 6, 2009·524 cites·26 claims
- 0296US7589003B2GeSn alloys and ordered phases with direct tunable bandgaps grown directly on siliconUNIV ARIZONA STATE·Filed 2004·Granted Sep 15, 2009·549 cites·22 claims
- 0394US7238596B2Method for preparing Ge1-x-ySnxEy (E=P, As, Sb) semiconductors and related Si-Ge-Sn-E and Si-Ge-E analogsARIZONA BOARD OF REGENTA A BOD·Filed 2004·Granted Jul 3, 2007·544 cites·25 claims
- 0492US8029905B2GeSiSn-based compounds, templates, and semiconductor structuresUNIV ARIZONA·Filed 2006·Granted Oct 4, 2011·23 cites·19 claims
- 0592US6897471B1Strain-engineered direct-gap Ge/SnxGe1-x heterodiode and multi-quantum-well photodetectors, laser, emitters and modulators grown on SnySizGe1-y-z-buffered siliconUS AIR FORCE·Filed 2003·Granted May 24, 2005·69 cites·12 claims
- 0682US7915104B1Methods and compositions for preparing tensile strained Ge on Ge1-ySny buffered semiconductor substratesUNIV ARIZONA·Filed 2008·Granted Mar 29, 2011·6 cites·21 claims
- 0781US8821635B2Method for growing Si-Ge semiconductor materials and devices on substratesKOUVETAKIS JOHN·Filed 2005·Granted Sep 2, 2014·9 cites·39 claims
- 0879US7582891B2Materials and optical devices based on group IV quantum wells grown on Si-Ge-Sn buffered siliconARIZONA BOARD OF REGENTS A COR·Filed 2005·Granted Sep 1, 2009·9 cites·5 claims
- 0976US6911084B2Low temperature epitaxial growth of quaternary wide bandgap semiconductorsUNIV ARIZONA·Filed 2001·Granted Jun 28, 2005·20 cites·19 claims
- 1075US7781356B2Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layerUNIV ARIZONA·Filed 2004·Granted Aug 24, 2010·17 cites·45 claims
- 1174US8043980B2Methods for making and using halosilylgermanesUNIV ARIZONA·Filed 2008·Granted Oct 25, 2011·4 cites·76 claims
- 1274US6207844B1Compounds and methods for depositing pure thin films of gallium nitride semiconductorUNIV ARIZONA·Filed 1999·Granted Mar 27, 2001·40 cites·5 claims
- 1372US8216537B2Silicon-germanium hydrides and methods for making and using sameKOUVETAKIS JOHN·Filed 2006·Granted Jul 10, 2012·4 cites·58 claims
- 1470US5606056ACarbon nitride and its synthesisUNIV ARIZONA·Filed 1994·Granted Feb 25, 1997·21 cites·4 claims
- 1558US8568681B2Hydride compounds with silicon and germanium core atoms and method of synthesizing sameKOUVETAKIS JOHN·Filed 2011·Granted Oct 29, 2013·0 cites·9 claims
- 1656US7910468B1Methods and compositions for preparing Ge/Si semiconductor substratesUNIV ARIZONA·Filed 2008·Granted Mar 22, 2011·0 cites·27 claims
- 1755US7374738B2Superhard dielectric compounds and methods of preparationUNIV ARIZONA STATE·Filed 2002·Granted May 20, 2008·5 cites·1 claims
- 1854US8803194B2Zirconium and hafnium boride alloy templates on silicon for nitride integration applicationsKOUVETAKIS JOHN·Filed 2008·Granted Aug 12, 2014·0 cites·13 claims
- 1952US8133802B2Silicon-germanium hydrides and methods for making and using sameKOUVETAKIS JOHN·Filed 2006·Granted Mar 13, 2012·0 cites·34 claims
- 2051US8524582B2Silicon-germanium hydrides and methods for making and using sameKOUVETAKIS JOHN·Filed 2012·Granted Sep 3, 2013·0 cites·10 claims
- 2151US7981392B2Hydride compounds with silicon and germanium core atoms and method of synthesizing sameUNIV ARIZONA·Filed 2004·Granted Jul 19, 2011·0 cites·15 claims
- 2249US2011254052A1Hybrid Group IV/III-V Semiconductor StructuresUNIV ARIZONA·Filed 2009·Application pending·0 cites
- 2348US8545627B2Zirconium and hafnium boride alloy templates on silicon for nitride integration applicationsKOUVETAKIS JOHN·Filed 2011·Granted Oct 1, 2013·0 cites·18 claims
- 2448US2011045646A1Selective deposition of sige layers from single source of si-ge hydridesUNIV ARIZONA·Filed 2009·Application pending·0 cites
- 2548US2011316043A1Thin Group IV Semiconductor StructuresKOUVETAKIS JOHN·Filed 2009·Application pending·0 cites
- 2648US2009324475A1Superhard dielectric compounds and methods of preparationUNIV ARIZONA·Filed 2008·Application pending·0 cites
- 2747US2011062496A1Methods and Compositions for Preparing Ge/Si Semiconductor SubstratesUNIV ARIZONA·Filed 2010·Application pending·0 cites
- 2847US2011198729A1Methods and Compositions for Preparing Tensile Strained Ge on Ge1-ySNy Buffered Semiconductor SubstratesUNIV ARIZONA·Filed 2011·Application pending·0 cites
- 2947US2012025212A1GeSn Infrared PhotodetectorsKOUVETAKIS JOHN·Filed 2009·Application pending·0 cites
- 3046US8518360B2Silicon-germanium hydrides and methods for making and using sameKOUVETAKIS JOHN·Filed 2012·Granted Aug 27, 2013·0 cites·46 claims
- 3137US2004129200A1Active electronic devices based on gallium nitride and its alloys grown on silicon substrates with buffer layers of SiCAINFiled 2003·Application pending·0 cites
- 3236US2013313579A1Dilute sn-doped ge alloysKOUVETAKIS JOHN·Filed 2011·Application pending·0 cites
- 3336US2004261689A1Low temperature epitaxial growth of quartenary wide bandgap semiconductorsFiled 2002·Application pending·0 cites
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