Inventor · disambiguated record
Kiyoshi Uchiyama
Also filed as: UCHIYAMA KIYOSHI
19 granted patents·2 pending applications·272 citations·filing 1988–2017
95Inventor score
Files withMATSUSHITA ELECTRIC INDUSTRIAL CO LTD10SYMETRIX CORP7Glorin Group1JTEKT CORP1SEIKO SEIKI KABUSHIK KAISHA1
Top patents by PatentIndex Score
21 records- 0187US6326315B1Low temperature rapid ramping anneal method for fabricating layered superlattice materials and making electronic devices including sameSYMETRIX CORP·Filed 2000·Granted Dec 4, 2001·43 cites·27 claims
- 0286US6831313B2Ferroelectric composite material, method of making same and memory utilizing sameSYMETRIX CORP·Filed 2002·Granted Dec 14, 2004·34 cites·14 claims
- 0385US6787181B2Chemical vapor deposition method of making layered superlattice materials using trimethylbismuthSYMETRIX CORP·Filed 2001·Granted Sep 7, 2004·34 cites·23 claims
- 0484US6489645B1Integrated circuit device including a layered superlattice material with an interface buffer layerMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Dec 3, 2002·28 cites·24 claims
- 0582US10507865B2Steering apparatusJTEKT CORP·Filed 2017·Granted Dec 17, 2019·3 cites·8 claims
- 0678US9744988B2Electric power steering apparatusTOYOTA MOTOR CO LTD·Filed 2016·Granted Aug 29, 2017·4 cites·3 claims
- 0778US6562678B1Chemical vapor deposition process for fabricating layered superlattice materialsSYMETRIX CORP·Filed 2000·Granted May 13, 2003·14 cites·44 claims
- 0870US6605477B2Integrated circuit device including a layered superlattice material with an interface buffer layerMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Aug 12, 2003·11 cites·28 claims
- 0969US6396095B1Semiconductor memory and method of driving semiconductor memoryMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted May 28, 2002·14 cites·3 claims
- 1068US6706585B2Chemical vapor deposition process for fabricating layered superlattice materialsSYMETRIX CORP·Filed 2003·Granted Mar 16, 2004·7 cites·17 claims
- 1167US6351004B1Tunneling transistor applicable to nonvolatile memoryMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Feb 26, 2002·13 cites·13 claims
- 1264US6607980B2Rapid-temperature pulsing anneal method at low temperature for fabricating layered superlattice materials and making electronic devices including sameSYMETRIX CORP·Filed 2001·Granted Aug 19, 2003·9 cites·41 claims
- 1357US6876030B2Semiconductor memory deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Apr 5, 2005·7 cites·13 claims
- 1455US6713799B2Electrodes for ferroelectric componentsMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Mar 30, 2004·4 cites·13 claims
- 1551US5222074AThermal decomposition cellMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1991·Granted Jun 22, 1993·9 cites·26 claims
- 1649US6580632B2Semiconductor memory device, method for driving the same and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Jun 17, 2003·4 cites·20 claims
- 1747US6660536B2Method of making ferroelectric material utilizing anneal in an electrical fieldSYMETRIX CORP·Filed 2002·Granted Dec 9, 2003·1 cites·37 claims
- 1844US4998859ATransferring apparatus operated in a vacuum chamberSEIKO SEIKI KABUSHIK KAISHA·Filed 1988·Granted Mar 12, 1991·19 cites·7 claims
- 1943US5194400AMethod for fabricating a semiconductor laser device using (Alx Ga1-x)y In1-y P semiconductor clad layersMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1991·Granted Mar 16, 1993·14 cites·9 claims
- 2043US2013025200A1System & Method for mixing and distributing air and steam in a gasifierGlorin Group·Filed 2011·Application pending·0 cites
- 2137US2005184328A1Semiconductor device and its manufacturing methodMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Application pending·0 cites
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