Inventor · disambiguated record
Ei Yano
Also filed as: YANO EI
72 granted patents·8 pending applications·1,489 citations·filing 1992–2010
99Inventor score
Top patents by PatentIndex Score
80 records- 0196US6329125B2Chemically amplified resist compositions and process for the formation of resist patternsFUJITSU LTD·Filed 2000·Granted Dec 11, 2001·154 cites·1 claims
- 0296US6013416AChemically amplified resist compositions and process for the formation of resist patternsFUJITSU LTD·Filed 1996·Granted Jan 11, 2000·164 cites·15 claims
- 0396US5968713AChemically amplified resist compositions and process for the formation of resist patternsFUJITSU LTD·Filed 1997·Granted Oct 19, 1999·165 cites·20 claims
- 0494US6613834B2Low dielectric constant film material, film and semiconductor device using such materialFUJITSU LTD·Filed 2001·Granted Sep 2, 2003·51 cites·6 claims
- 0592US6200725B1Chemically amplified resist compositions and process for the formation of resist patternsFUJITSU LTD·Filed 1997·Granted Mar 13, 2001·105 cites·8 claims
- 0691US7202679B2Contactor having conductive particles in a hole as a contact electrodeFUJITSU LTD·Filed 2006·Granted Apr 10, 2007·18 cites·21 claims
- 0791US6780498B2Silicon-based composition, low dielectric constant film, semiconductor device, and method for producing low dielectric constant filmFUJITSU LTD·Filed 2001·Granted Aug 24, 2004·31 cites·13 claims
- 0891US6342562B1Silicon-containing polymer, process for its production, resist composition employing it, pattern-forming method and electronic device fabrication methodFUJITSU LTD·Filed 2000·Granted Jan 29, 2002·41 cites·9 claims
- 0989US7262142B2Semiconductor device fabrication methodFUJITSU LTD·Filed 2005·Granted Aug 28, 2007·14 cites·17 claims
- 1089US6027856ANegative-type resist composition and process for forming resist patternsFUJITSU LTD·Filed 1999·Granted Feb 22, 2000·67 cites·13 claims
- 1188US6506534B1Negative resist composition, method for the formation of resist patterns and process for the production of electronic devicesFUJITSU LTD·Filed 2000·Granted Jan 14, 2003·29 cites·11 claims
- 1284US6958525B2Low dielectric constant film material, film and semiconductor device using such materialFUJITSU LTD·Filed 2003·Granted Oct 25, 2005·17 cites·6 claims
- 1383US7488569B2Negative resist composition, a method for forming a resist pattern thereof, and a method for fabricating a semiconductor deviceFUJITSU LTD·Filed 2006·Granted Feb 10, 2009·5 cites·18 claims
- 1483US7476970B2Composition for forming insulating film and method for fabricating semiconductor deviceFUJITSU LTD·Filed 2006·Granted Jan 13, 2009·7 cites·1 claims
- 1583US5444811AOrganic functional optical thin film, fabrication and use thereofFUJITSU LTD·Filed 1992·Granted Aug 22, 1995·46 cites·88 claims
- 1682US8334091B2Resist pattern swelling material, and method for patterning using sameNOZAKI KOJI·Filed 2008·Granted Dec 18, 2012·7 cites·15 claims
- 1782US7659357B2Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the sameFUJITSU LTD·Filed 2005·Granted Feb 9, 2010·10 cites·2 claims
- 1880US6727515B2Insulation film forming material, insulation film, method for forming the insulation film, and semiconductor deviceFUJITSU LTD·Filed 2002·Granted Apr 27, 2004·15 cites·21 claims
- 1979US6541077B1Silicon-containing polymer, process for its production, resist composition employing it, pattern-forming method and electronic device fabrication methodFUJITSU LTD·Filed 2001·Granted Apr 1, 2003·16 cites·15 claims
- 2078US6545363B2Contactor having conductive particles in a hole as a contact electrodeFUJITSU LTD·Filed 2001·Granted Apr 8, 2003·19 cites·6 claims
- 2175US7189783B2Resist pattern thickening material, resist pattern and forming process thereof, and semiconductor device and manufacturing process thereofFUJITSU LTD·Filed 2002·Granted Mar 13, 2007·13 cites·20 claims
- 2275US6451501B1Acid sensitive copolymer, resist composition and resist pattern forming methodFUJITSU LTD·Filed 2000·Granted Sep 17, 2002·14 cites·14 claims
- 2375US6278192B1Semiconductor device with encapsulating material composed of silicaFUJITSU LTD·Filed 1999·Granted Aug 21, 2001·45 cites·25 claims
- 2474US8349542B2Manufacturing process of semiconductor deviceFUJITSU LTD·Filed 2010·Granted Jan 8, 2013·2 cites·4 claims
- 2574US7744768B2Resist pattern thickening material, resist pattern and forming process thereof, and semiconductor device and manufacturing process thereofFUJITSU LTD·Filed 2006·Granted Jun 29, 2010·3 cites·7 claims
- 2674US6565419B1Method of removing particles from stage and cleaning plateADVANTEST CORP·Filed 2000·Granted May 20, 2003·17 cites·12 claims
- 2774US5910392AResist composition, a process for forming a resist pattern and a process for manufacturing a semiconductor deviceFUJITSU LTD·Filed 1997·Granted Jun 8, 1999·46 cites·17 claims
- 2873US6338903B1Resin composition for semiconductor encapsulation, method and apparatus for producing the composition, as well as semiconductor device using the compositionFUJITSU LTD·Filed 2000·Granted Jan 15, 2002·19 cites·10 claims
- 2973US6052261AMethod for manufacturing magnetoresistance headFUJITSU LTD·Filed 1996·Granted Apr 18, 2000·23 cites·28 claims
- 3070US5482174AMethod for removing copper oxide on the surface of a copper film and a method for patterning a copper filmFUJITSU LTD·Filed 1994·Granted Jan 9, 1996·30 cites·16 claims
- 3168US7830013B2Material for forming adhesion reinforcing layer, adhesion reinforcing layer, semiconductor device, and manufacturing method thereofFUJITSU LTD·Filed 2006·Granted Nov 9, 2010·1 cites·13 claims
- 3268US5633121AMethod for examining surface of copper layer in circuit board and process for producing circuit boardFUJITSU LTD·Filed 1996·Granted May 27, 1997·28 cites·15 claims
- 3367US7655576B2Insulator film, manufacturing method of multilayer wiring device and multilayer wiring deviceFUJITSU LTD·Filed 2007·Granted Feb 2, 2010·2 cites·9 claims
- 3467US6773867B2Negative resist composition, method for the formation of resist patterns and process for the production of electronic devicesFUJITSU LTD·Filed 2002·Granted Aug 10, 2004·7 cites·39 claims
- 3566US6770417B2Negative resist composition, process for forming resist patterns, and process for manufacturing electron deviceFUJITSU LTD·Filed 2001·Granted Aug 3, 2004·20 cites·37 claims
- 3663US7235866B2Low dielectric constant film material, film and semiconductor device using such materialFUJITSU LTD·Filed 2005·Granted Jun 26, 2007·2 cites·3 claims
- 3762US7358299B2Silicon-based composition, low dielectric constant film, semiconductor device, and method for producing low dielectric constant filmFUJITSU LTD·Filed 2004·Granted Apr 15, 2008·4 cites·7 claims
- 3862US6887644B1Polymer compound for a chemical amplification resist and a fabrication process of a semiconductor device using such a chemical amplification resistFUJITSU LTD·Filed 1998·Granted May 3, 2005·26 cites·27 claims
- 3962US6844135B2Chemically amplified resist material and patterning method using sameFUJITSU LTD·Filed 2003·Granted Jan 18, 2005·16 cites·8 claims
- 4061US7232769B2Method of forming amorphous silica-based coating film with low dielectric constant and thus obtained silica-based coating filmFUJITSU LTD·Filed 2003·Granted Jun 19, 2007·7 cites·32 claims
- 4160US7122288B2Negative resist composition, a method for forming a resist pattern thereof, and a method for fabricating a semiconductor deviceFUJITSU LTD·Filed 2002·Granted Oct 17, 2006·4 cites·29 claims
- 4260US6794112B2Negative resist composition, method for the formation of resist patterns and process for the production of electronic devicesFUJITSU LTD·Filed 2002·Granted Sep 21, 2004·4 cites·6 claims
- 4359US8124239B2Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the sameNAKATA YOSHIHIRO·Filed 2009·Granted Feb 28, 2012·0 cites·3 claims
- 4459US7144968B2Silicon-containing polymer, process for its production, resist composition employing it, pattern-forming method and electronic device fabrication methodFUJITSU LTD·Filed 2001·Granted Dec 5, 2006·4 cites·10 claims
- 4558US7985700B2Composition for forming insulating film and method for fabricating semiconductor deviceFUJITSU LTD·Filed 2008·Granted Jul 26, 2011·0 cites·11 claims
- 4658US6200724B1Chemical amplification resist compositions and process for the formation of resist patternsFUJITSU LTD·Filed 1996·Granted Mar 13, 2001·16 cites·16 claims
- 4757US8378489B2Semiconductor device and manufacturing method thereforFUJITSU LTD·Filed 2009·Granted Feb 19, 2013·0 cites·19 claims
- 4857US7038477B2Contactor having conductive particles in a hole as a contact electrodeFUJITSU LTD·Filed 2004·Granted May 2, 2006·5 cites·1 claims
- 4957US6937038B2Contactor having conductive particles in a hole as a contact electrodeFUJITSU LTD·Filed 2003·Granted Aug 30, 2005·5 cites·6 claims
- 5057US6794113B2Negative resist composition, method for the formation of resist patterns and process for the production of electronic devicesFUJITSU LTD·Filed 2002·Granted Sep 21, 2004·3 cites·20 claims
Showing the top 50 of 80 patent records by PatentIndex Score.
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