Inventor · disambiguated record
John Mark Meldrim
Also filed as: MELDRIM JOHN M · MELDRIM JOHN MARK
66 granted patents·11 pending applications·161 citations·filing 2005–2025
98Inventor score
Files withMICRON TECHNOLOGY INC67LODESTAR LICENSING GROUP LLC3MELDRIM JOHN MARK2HU YONGJUN JEFF1HULL JEFFERY B1
Top patents by PatentIndex Score
77 records- 0198US9166158B2Apparatuses including electrodes having a conductive barrier material and methods of forming sameMICRON TECHNOLOGY INC·Filed 2013·Granted Oct 20, 2015·28 cites·16 claims
- 0297US10283524B1Methods of filling horizontally-extending openings of integrated assembliesMICRON TECHNOLOGY INC·Filed 2017·Granted May 7, 2019·17 cites·9 claims
- 0397US10170493B1Assemblies having vertically-stacked conductive structuresMICRON TECHNOLOGY INC·Filed 2017·Granted Jan 1, 2019·13 cites·16 claims
- 0495US11710710B2Microelectronic devices with a polysilicon structure adjacent a staircase structure, and related methodsMICRON TECHNOLOGY INC·Filed 2021·Granted Jul 25, 2023·2 cites·20 claims
- 0593US11705500B2Assemblies having conductive structures with three or more different materialsMICRON TECHNOLOGY INC·Filed 2021·Granted Jul 18, 2023·2 cites·16 claims
- 0693US11088088B2Microelectronic devices with polysilicon fill material between opposing staircase structures, and related devices, systems, and methodsMICRON TECHNOLOGY INC·Filed 2019·Granted Aug 10, 2021·6 cites·18 claims
- 0792US10847367B2Methods of forming tungsten structuresMICRON TECHNOLOGY INC·Filed 2018·Granted Nov 24, 2020·7 cites·26 claims
- 0892US10344398B2Source material for electronic device applicationsMICRON TECHNOLOGY INC·Filed 2016·Granted Jul 9, 2019·7 cites·14 claims
- 0992US10217936B2Apparatuses including electrodes having a conductive barrier material and methods of forming sameMICRON TECHNOLOGY INC·Filed 2018·Granted Feb 26, 2019·4 cites·20 claims
- 1091US11646206B2Methods of forming tungsten structuresMICRON TECHNOLOGY INC·Filed 2020·Granted May 9, 2023·2 cites·20 claims
- 1191US10069069B2Apparatuses including electrodes having a conductive barrier material and methods of forming sameMICRON TECHNOLOGY INC·Filed 2017·Granted Sep 4, 2018·4 cites·19 claims
- 1291US9608185B2Ohmic contacts for semiconductor structuresMICRON TECHNOLOGY INC·Filed 2014·Granted Mar 28, 2017·6 cites·4 claims
- 1390US10361214B2Methods of filling openings with conductive material, and assemblies having vertically-stacked conductive structuresMICRON TECHNOLOGY INC·Filed 2018·Granted Jul 23, 2019·3 cites·17 claims
- 1490US10062844B2Apparatuses including electrodes having a conductive barrier material and methods of forming sameMICRON TECHNOLOGY INC·Filed 2015·Granted Aug 28, 2018·4 cites·18 claims
- 1589US10354989B1Integrated assemblies and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2018·Granted Jul 16, 2019·5 cites·32 claims
- 1689US2024407160A1Methods of Filling Openings with Conductive Material, and Assemblies Having Vertically-Stacked Conductive StructuresMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 1789US2025015245A1Ohmic contacts for semiconductor structuresMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 1887US10998481B2Ohmic contacts for semiconductor structuresMICRON TECHNOLOGY INC·Filed 2019·Granted May 4, 2021·1 cites·18 claims
- 1987US10957775B2Assemblies having conductive structures with three or more different materialsMICRON TECHNOLOGY INC·Filed 2019·Granted Mar 23, 2021·3 cites·33 claims
- 2086US10651381B2Apparatuses including electrodes having a conductive barrier material and methods of forming sameMICRON TECHNOLOGY INC·Filed 2018·Granted May 12, 2020·2 cites·17 claims
- 2186US8877624B2Semiconductor structuresHULL JEFFERY B·Filed 2013·Granted Nov 4, 2014·9 cites·7 claims
- 2284US11127899B2Conductive interconnects suitable for utilization in integrated assemblies, and methods of forming conductive interconnectsMICRON TECHNOLOGY INC·Filed 2019·Granted Sep 21, 2021·3 cites·25 claims
- 2384US10573661B2Methods of filling horizontally-extending openings of integrated assembliesMICRON TECHNOLOGY INC·Filed 2019·Granted Feb 25, 2020·2 cites·18 claims
- 2484US9773807B1Conductive components and memory assembliesMICRON TECHNOLOGY INC·Filed 2017·Granted Sep 26, 2017·4 cites·26 claims
- 2583US12218081B2Microelectronic devices with a polysilicon structure above a staircase structure, and related methodsLODESTAR LICENSING GROUP LLC·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
- 2680US10361216B2Methods used in forming an array of elevationally-extending transistorsMICRON TECHNOLOGY INC·Filed 2017·Granted Jul 23, 2019·2 cites·29 claims
- 2778US10553611B2Memory arrays and methods of fabricating integrated structureMICRON TECHNOLOGY INC·Filed 2019·Granted Feb 4, 2020·1 cites·9 claims
- 2878US10164044B2Gate stacksMICRON TECHNOLOGY INC·Filed 2015·Granted Dec 25, 2018·2 cites·32 claims
- 2978US7557032B2Silicided recessed siliconMICRON TECHNOLOGY INC·Filed 2005·Granted Jul 7, 2009·6 cites·12 claims
- 3078US2025183196A1Microelectronic devices with a polysilicon structure above a staircase structure, and related methodsLODESTAR LICENSING GROUP LLC·Filed 2025·Application pending·0 cites
- 3177US12324157B2Integrated circuitry, comprising a pair of opposing lateral projections in insulating material in a cavityMICRON TECHNOLOGY INC·Filed 2023·Granted Jun 3, 2025·0 cites·12 claims
- 3277US2025261367A1Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory CellsMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 3376US11990528B2Assemblies having conductive structures with three or more different materialsLODESTAR LICENSING GROUP LLC·Filed 2022·Granted May 21, 2024·0 cites·16 claims
- 3476US7977236B2Method of forming a transistor gate of a recessed access device, method of forming a recessed transistor gate and a non-recessed transistor gate, and method of fabricating an integrated circuitMICRON TECHNOLOGY INC·Filed 2009·Granted Jul 12, 2011·5 cites·16 claims
- 3575US12114492B2Memories having vertically stacked conductive filled structuresMICRON TECHNOLOGY INC·Filed 2020·Granted Oct 8, 2024·0 cites·31 claims
- 3675US2021257526A1Ohmic contacts for semiconductor structuresMICRON TECHNOLOGY INC·Filed 2021·Application pending·0 cites
- 3774US10446727B2Ohmic contacts for semiconductor structuresMICRON TECHNOLOGY INC·Filed 2017·Granted Oct 15, 2019·1 cites·18 claims
- 3873US11158718B2Assemblies which include wordlines having a first metal-containing material at least partially surrounding a second metal-containing material and having different crystallinity than the second metal-containing materialMICRON TECHNOLOGY INC·Filed 2019·Granted Oct 26, 2021·1 cites·47 claims
- 3973US10840255B2Methods of filling openings with conductive material, and assemblies having vertically-stacked conductive structuresMICRON TECHNOLOGY INC·Filed 2020·Granted Nov 17, 2020·0 cites·11 claims
- 4072US12034057B2Assemblies which include wordlines having a first metal-containing material at least partially surrounding a second metal-containing material and having different crystallinity than the second metal-containing materialMICRON TECHNOLOGY INC·Filed 2021·Granted Jul 9, 2024·0 cites·36 claims
- 4172US10943920B2Methods of fabricating integrated structuresMICRON TECHNOLOGY INC·Filed 2020·Granted Mar 9, 2021·0 cites·16 claims
- 4272US9935120B2Methods of fabricating integrated structuresMICRON TECHNOLOGY INC·Filed 2016·Granted Apr 3, 2018·1 cites·5 claims
- 4372US8728930B2Methods of forming metal silicide-comprising material and methods of forming metal silicide-comprising contactsWELLS DAVID H·Filed 2011·Granted May 20, 2014·2 cites·48 claims
- 4469US12432984B2Microelectronic devices including stack structures having doped interfacial regions, and related systems and methodsMICRON TECHNOLOGY INC·Filed 2022·Granted Sep 30, 2025·0 cites·11 claims
- 4569US11647633B2Methods used in forming integrated circuitry comprising a stack comprising vertically-alternating first tiers and second tiers with the stack comprising a cavity therein that comprises a stair-step structureMICRON TECHNOLOGY INC·Filed 2020·Granted May 9, 2023·0 cites·12 claims
- 4669US10943921B2Methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2020·Granted Mar 9, 2021·0 cites·14 claims
- 4768US10916564B2Assemblies having vertically-extending structures, and methods of forming assemblies having vertically-extending channel material pillarsMICRON TECHNOLOGY INC·Filed 2020·Granted Feb 9, 2021·0 cites·19 claims
- 4868US10559579B2Assemblies having vertically-stacked conductive structuresMICRON TECHNOLOGY INC·Filed 2019·Granted Feb 11, 2020·0 cites·13 claims
- 4968US10304749B2Method and apparatus for improved etch stop layer or hard mask layer of a memory deviceINTEL CORP·Filed 2017·Granted May 28, 2019·1 cites·13 claims
- 5068US10014319B1Conductive components and memory assembliesMICRON TECHNOLOGY INC·Filed 2017·Granted Jul 3, 2018·1 cites·23 claims
Showing the top 50 of 77 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →