Inventor · disambiguated record
Tzu-Yen Hsieh
Also filed as: HSIEH TZU-YEN
24 granted patents·1 pending application·174 citations·filing 1989–2022
95Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD9HSIEH TZU-YEN5TAIWAN SEMICONDUCTOR MFG4AGERE SYSTEMS INC2ADVANCED MICRO DEVICES INC1
Top patents by PatentIndex Score
25 records- 0194US9934971B2Method of forming an integrated circuit using a patterned mask layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 3, 2018·6 cites·20 claims
- 0293US9640398B2Method of forming an integrated circuit using a patterned mask layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 2, 2017·6 cites·20 claims
- 0392US11462408B2Method of forming an integrated circuit using a patterned mask layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 4, 2022·2 cites·20 claims
- 0492US9923079B2Composite dummy gate with conformal polysilicon layer for FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 20, 2018·8 cites·20 claims
- 0592US8772183B2Method of forming an integrated circuitHSIEH TZU-YEN·Filed 2011·Granted Jul 8, 2014·11 cites·20 claims
- 0690US10665457B2Method of forming an integrated circuit using a patterned mask layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 26, 2020·3 cites·20 claims
- 0790US9123743B2FinFETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 1, 2015·9 cites·20 claims
- 0890US4923022AAutomatic mailing apparatusCHANG CHIEN HUA·Filed 1989·Granted May 8, 1990·93 cites·7 claims
- 0986US9059085B2Method of forming an integrated circuit using a patterned mask layerTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jun 16, 2015·4 cites·20 claims
- 1083US12027370B2Method of forming an integrated circuit using a patterned mask layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 2, 2024·0 cites·20 claims
- 1179US8680671B2Self-aligned double patterning for memory and other microelectronic devicesHSIEH TZU-YEN·Filed 2009·Granted Mar 25, 2014·7 cites·17 claims
- 1269US7279429B1Method to improve ignition in plasma etching or plasma deposition stepsADVANCED MICRO DEVICES INC·Filed 2004·Granted Oct 9, 2007·7 cites·23 claims
- 1366US9287179B2Composite dummy gate with conformal polysilicon layer for FinFET deviceHUANG YUAN-SHENG·Filed 2012·Granted Mar 15, 2016·2 cites·20 claims
- 1463US6790753B2Field plated schottky diode and method of fabrication thereforAGERE SYSTEMS INC·Filed 2003·Granted Sep 14, 2004·10 cites·15 claims
- 1558US10269581B2Method of fabricating a semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·0 cites·20 claims
- 1654US6690037B1Field plated Schottky diodeAGERE SYSTEMS INC·Filed 2000·Granted Feb 10, 2004·6 cites·16 claims
- 1753US9779963B2Method of fabricating a semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 3, 2017·0 cites·20 claims
- 1853US9276089B2FinFETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Mar 1, 2016·0 cites·20 claims
- 1953US9147679B2Method of semiconductor integrated circuit fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Sep 29, 2015·0 cites·19 claims
- 2052US9111861B2Method of fabricating a semiconductor structure with ion-implanted conductive layerHSIEH TZU-YEN·Filed 2012·Granted Aug 18, 2015·0 cites·20 claims
- 2150US10854433B2In-situ real-time plasma chamber condition monitoringAPPLIED MATERIALS INC·Filed 2019·Granted Dec 1, 2020·0 cites·20 claims
- 2249US2014191308A1Self-aligned double patterning for memory and other microelectronic devicesSPANSION LLC·Filed 2014·Application pending·0 cites
- 2348US8691655B2Method of semiconductor integrated circuit fabricationHSIEH TZU-YEN·Filed 2012·Granted Apr 8, 2014·0 cites·20 claims
- 2446US9054125B2Method for making semiconductor device with gate profile controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jun 9, 2015·0 cites·17 claims
- 2540US8853092B2Self-aligned patterning with implantationHSIEH TZU-YEN·Filed 2011·Granted Oct 7, 2014·0 cites·19 claims
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