Inventor · disambiguated record
Johan Darmawan
Also filed as: DARMAWAN JOHAN · DARMAWAN JOHAN A · DARMAWAN JOHAN AGUS
13 granted patents·2 pending applications·233 citations·filing 1988–2008
93Inventor score
Files withCREE MICROWAVE INC5NAT SEMICONDUCTOR CORP5CREE MICROWAVE LLC2ADVANCED MICRO DEVICES INC1CREE INC1
Top patents by PatentIndex Score
15 records- 0188US7061057B2Laterally diffused MOS transistor having N+ source contact to N-doped substrateCREE MICROWAVE LLC·Filed 2004·Granted Jun 13, 2006·47 cites·22 claims
- 0281US6740548B2Method of manufacture of silicon on insulator device with improved heat removalCREE MICROWAVE INC·Filed 2002·Granted May 25, 2004·29 cites·9 claims
- 0379US6727127B1Laterally diffused MOS transistor (LDMOS) and method of making sameCREE INC·Filed 2002·Granted Apr 27, 2004·27 cites·11 claims
- 0477US6900501B2Silicon on insulator device with improved heat removalCREE MICROWAVE INC·Filed 2001·Granted May 31, 2005·22 cites·4 claims
- 0575USRE42403ELaterally diffused MOS transistor having N+ source contact to N-doped substrateROVEC ACQUISITIONS LTD LLC·Filed 2008·Granted May 31, 2011·7 cites·29 claims
- 0672US5994759ASemiconductor-on-insulator structure with reduced parasitic capacitanceNAT SEMICONDUCTOR CORP·Filed 1998·Granted Nov 30, 1999·36 cites·12 claims
- 0769US7307314B2LDMOS transistor with improved gate shieldCREE MICROWAVE LLC·Filed 2004·Granted Dec 11, 2007·19 cites·7 claims
- 0855US6548869B2Voltage limiting protection for high frequency power deviceCREE MICROWAVE INC·Filed 2001·Granted Apr 15, 2003·7 cites·12 claims
- 0953US6265248B1Method for producing semiconductor-on-insulator structure with reduced parasitic capacitanceNAT SEMICONDUCTOR CORP·Filed 1999·Granted Jul 24, 2001·16 cites·20 claims
- 1051US4853344AMethod of integrated circuit isolation oxidizing walls of isolation slot, growing expitaxial layer over isolation slot, and oxidizing epitaxial layer over isolation slotADVANCED MICRO DEVICES INC·Filed 1988·Granted Aug 1, 1989·17 cites·21 claims
- 1137US5681765AProcess for fabricating single polysilicon high performance BICMOSNAT SEMICONDUCTOR CORP·Filed 1996·Granted Oct 28, 1997·6 cites·5 claims
- 1237US2005280087A1Laterally diffused MOS transistor having source capacitor and gate shieldCREE MICROWAVE INC·Filed 2004·Application pending·0 cites
- 1334US2005280085A1LDMOS transistor having gate shield and trench source capacitorCREE MICROWAVE INC·Filed 2004·Application pending·0 cites
- 1430US5786222AMethod of manufacturing high performance bipolar transistors in a BiCMOS processNAT SEMICONDUCTOR CORP·Filed 1996·Granted Jul 28, 1998·0 cites·42 claims
- 1529US5594268AMethod of manufacturing high performance bipolar transistors in a BICMOS processNAT SEMICONDUCTOR CORP·Filed 1994·Granted Jan 14, 1997·0 cites·2 claims
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