Inventor · disambiguated record
Fumitake Mieno
Also filed as: MIENO FUMITAKE
53 granted patents·4 pending applications·1,425 citations·filing 1987–2015
98Inventor score
Files withFUJITSU LTD19MIENO FUMITAKE15SEMICONDUCTOR MFG INT SHANGHAI9SEMICONDUCTOR MFG INT CORP4JI HUA3
Top patents by PatentIndex Score
57 records- 0196US8158512B2Atomic layer deposition method and semiconductor device formed by the sameJI HUA·Filed 2008·Granted Apr 17, 2012·463 cites·16 claims
- 0294US4825809AChemical vapor deposition apparatus having an ejecting head for ejecting a laminated reaction gas flowFUJITSU LTD·Filed 1988·Granted May 2, 1989·90 cites·7 claims
- 0393US4855254AMethod of growing a single crystalline β-SiC layer on a silicon substrateFUJITSU LTD·Filed 1988·Granted Aug 8, 1989·71 cites·12 claims
- 0490US9257538B2Fin-type field effect transistor and manufacturing method thereofSEMICONDUCTOR MFG INT SHANGHAI·Filed 2014·Granted Feb 9, 2016·9 cites·17 claims
- 0590US4804560AMethod of selectively depositing tungsten upon a semiconductor substrateFUJITSU LTD·Filed 1987·Granted Feb 14, 1989·125 cites·2 claims
- 0689US5362981AIntegrated semiconductor device having a buried semiconductor layer and fabrication method thereofFUJITSU LTD·Filed 1993·Granted Nov 8, 1994·68 cites·15 claims
- 0788US9419057B2Resistive random access memory device and manufacturing methodsSEMICONDUCTOR MFG INT BEIJING CORP·Filed 2015·Granted Aug 16, 2016·5 cites·20 claims
- 0888US5609721ASemiconductor device manufacturing apparatus and its cleaning methodFUJITSU LTD·Filed 1995·Granted Mar 11, 1997·112 cites·21 claims
- 0987US4879255AMethod for fabricating bipolar-MOS devicesFUJITSU LTD·Filed 1988·Granted Nov 7, 1989·58 cites·2 claims
- 1084US8835213B2Semiconductor device and manufacturing method thereofMIENO FUMITAKE·Filed 2012·Granted Sep 16, 2014·6 cites·17 claims
- 1183US4966861AVapor deposition method for simultaneously growing an epitaxial silicon layer and a polycrystalline silicone layer over a selectively oxidized silicon substrateFUJITSU LTD·Filed 1989·Granted Oct 30, 1990·73 cites·8 claims
- 1281US8492213B2Transistor and method for forming the sameMIENO FUMITAKE·Filed 2011·Granted Jul 23, 2013·5 cites·11 claims
- 1381US8409883B2Method for fabricating a phase change memoryMIENO FUMITAKE·Filed 2011·Granted Apr 2, 2013·4 cites·15 claims
- 1481US8273639B2Atomic layer deposition method and semiconductor device formed by the sameJI HUA·Filed 2008·Granted Sep 25, 2012·8 cites·14 claims
- 1580US5103285ASilicon carbide barrier between silicon substrate and metal layerFUJITSU LTD·Filed 1988·Granted Apr 7, 1992·40 cites·8 claims
- 1680US4876219AMethod of forming a heteroepitaxial semiconductor thin film using amorphous buffer layersFUJITSU LTD·Filed 1989·Granted Oct 24, 1989·52 cites·8 claims
- 1779US7887884B2Method for atomic layer deposition of materials using an atmospheric pressure for semiconductor devicesSEMICONDUCTOR MFG INT SHANGHAI·Filed 2005·Granted Feb 15, 2011·3 cites·23 claims
- 1879US7569487B2Method for atomic layer deposition of materials using a pre-treatment for semiconductor devicesSEMICONDUCTOR MFG INT SHANGHAI·Filed 2006·Granted Aug 4, 2009·3 cites·19 claims
- 1978US7709386B2Atomic layer deposition method and semiconductor device formed by the sameSEMICONDUCTOR MFG INT SHANGHAI·Filed 2008·Granted May 4, 2010·6 cites·29 claims
- 2076US5270224AMethod of manufacturing a semiconductor device having a region doped to a level exceeding the solubility limitFUJITSU LTD·Filed 1992·Granted Dec 14, 1993·41 cites·5 claims
- 2175US5111266ASemiconductor device having a region doped to a level exceeding the solubility limitFUJITSU LTD·Filed 1991·Granted May 5, 1992·38 cites·9 claims
- 2274US9425278B2Segregated FinFET structure and manufacturing methodSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2014·Granted Aug 23, 2016·3 cites·15 claims
- 2370US7615475B2Method for fabricating landing polysilicon contact structures for semiconductor devicesSEMICONDUCTOR MFG INT SHANGHAI·Filed 2006·Granted Nov 10, 2009·3 cites·20 claims
- 2469US8933428B2Phase change memorySEMICONDUCTOR MFG INT CORP·Filed 2013·Granted Jan 13, 2015·1 cites·12 claims
- 2569US5082695AMethod of fabricating an x-ray exposure maskFUJITSU LTD·Filed 1989·Granted Jan 21, 1992·19 cites·11 claims
- 2668US8415218B2Atomic layer deposition epitaxial silicon growth for TFT flash memory cellMIENO FUMITAKE·Filed 2008·Granted Apr 9, 2013·2 cites·15 claims
- 2767US8951871B2Semiconductor device and manufacturing method thereofMIENO FUMITAKE·Filed 2011·Granted Feb 10, 2015·2 cites·22 claims
- 2866US5518937ASemiconductor device having a region doped to a level exceeding the solubility limitFUJITSU LTD·Filed 1995·Granted May 21, 1996·26 cites·2 claims
- 2964US8865552B2Fin field effect transistor and fabrication methodSEMICONDUCTOR MFG INT CORP·Filed 2013·Granted Oct 21, 2014·1 cites·18 claims
- 3064US8420466B2Method of forming TFT floating gate memory cell structuresMIENO FUMITAKE·Filed 2008·Granted Apr 16, 2013·2 cites·19 claims
- 3163US8420511B2Transistor and method for forming the sameMIENO FUMITAKE·Filed 2011·Granted Apr 16, 2013·1 cites·20 claims
- 3261US5589410AAn integrated semiconductor device having a buried semiconductor layer and fabrication method thereofFUJITSU LTD·Filed 1994·Granted Dec 31, 1996·17 cites·5 claims
- 3360US9263566B2Semiconductor device and manufacturing method thereofMIENO FUMITAKE·Filed 2012·Granted Feb 16, 2016·1 cites·8 claims
- 3459US8105920B2Semiconductor device with amorphous silicon mas memory cell structure and manufacturing method thereofMIENO FUMITAKE·Filed 2008·Granted Jan 31, 2012·1 cites·19 claims
- 3559US8101478B2TFT MONOS or SONOS memory cell structuresMIENO FUMITAKE·Filed 2008·Granted Jan 24, 2012·1 cites·17 claims
- 3654US5843829AMethod for fabricating a semiconductor device including a step for forming an amorphous silicon layer followed by a crystallization thereofFUJITSU LTD·Filed 1995·Granted Dec 1, 1998·19 cites·10 claims
- 3753US8906785B2Method of epitaxially growing silicon by atomic layer deposition for TFT flash memory cellSEMICONDUCTOR MFG INT SHANGHAI·Filed 2013·Granted Dec 9, 2014·0 cites·10 claims
- 3852US8569798B1Semicondcutor device comprising transistorSEMICONDUCTOR MFG INT CORP·Filed 2013·Granted Oct 29, 2013·0 cites·9 claims
- 3952US8481348B2Phase change memory and method for fabricating the sameMIENO FUMITAKE·Filed 2011·Granted Jul 9, 2013·0 cites·12 claims
- 4051US8941170B2TFT floating gate memory cell structuresSEMICONDUCTOR MFG INT SHANGHAI·Filed 2013·Granted Jan 27, 2015·0 cites·12 claims
- 4146US5264038AChemical vapor deposition systemFUJITSU LTD·Filed 1990·Granted Nov 23, 1993·13 cites·10 claims
- 4245US8513079B2TFT SAS memory cell structuresMIENO FUMITAKE·Filed 2008·Granted Aug 20, 2013·0 cites·14 claims
- 4344US9525046B2Metal gate stack structure and manufacturing methodSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2015·Granted Dec 20, 2016·0 cites·20 claims
- 4444US2010001353A1SANOS Memory Cell StructureSEMICONDUCTOR MFG INT SHANGHAI·Filed 2008·Application pending·0 cites
- 4543US8872243B2Semiconductor device and related manufacturing methodMIENO FUMITAKE·Filed 2012·Granted Oct 28, 2014·0 cites·18 claims
- 4643US5881876AMethod and vessel for storing a substrate cleaning brushDAINIPPON SCREEN MFG·Filed 1996·Granted Mar 16, 1999·12 cites·30 claims
- 4743US5233163AGraphite columnar heating body for semiconductor wafer heatingFUJITSU LTD·Filed 1991·Granted Aug 3, 1993·14 cites·23 claims
- 4841US7670900B2Method and structure for fabricating capacitor devices for integrated circuitsSEMICONDUCTOR MFG INT SHANGHAI·Filed 2006·Granted Mar 2, 2010·0 cites·12 claims
- 4941US2013228864A1Fin field effect transistor and fabrication methodSEMICONDUCTOR MFG INT CORP·Filed 2013·Application pending·0 cites
- 5040US2013109145A1Method of manufacturing semiconductor deviceMIENO FUMITAKE·Filed 2012·Application pending·0 cites
Showing the top 50 of 57 patent records by PatentIndex Score.
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