Inventor · disambiguated record
Gary M. Dolny
Also filed as: DOLNY GARY · DOLNY GARY M · DOLNY GARY MARK
41 granted patents·3 pending applications·767 citations·filing 1986–2022
98Inventor score
Top patents by PatentIndex Score
44 records- 0198US7504303B2Trench-gate field effect transistors and methods of forming the sameFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Mar 17, 2009·94 cites·21 claims
- 0298US7352036B2Semiconductor power device having a top-side drain using a sinker trenchFAIRCHILD SEMICONDUCTOR·Filed 2005·Granted Apr 1, 2008·55 cites·7 claims
- 0396US10892362B1Devices for LDMOS and other MOS transistors with hybrid contactSILICET LLC·Filed 2020·Granted Jan 12, 2021·12 cites·19 claims
- 0496US8803207B2Shielded gate field effect transistorsGREBS THOMAS E·Filed 2011·Granted Aug 12, 2014·26 cites·20 claims
- 0596US8026558B2Semiconductor power device having a top-side drain using a sinker trenchFAIRCHILD SEMICONDUCTOR·Filed 2010·Granted Sep 27, 2011·19 cites·12 claims
- 0696US7923776B2Trench-gate field effect transistor with channel enhancement region and methods of forming the sameFAIRCHILD SEMICONDUCTOR·Filed 2010·Granted Apr 12, 2011·19 cites·13 claims
- 0795US11322611B2Methods for LDMOS and other MOS transistors with hybrid contactSILICET LLC·Filed 2020·Granted May 3, 2022·5 cites·4 claims
- 0895US7416948B2Trench FET with improved body to gate alignmentFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Aug 26, 2008·30 cites·44 claims
- 0994US8043913B2Method of forming trench-gate field effect transistorsFAIRCHILD SEMICONDUCTOR·Filed 2011·Granted Oct 25, 2011·13 cites·18 claims
- 1093US8143123B2Methods of forming inter-poly dielectric (IPD) layers in power semiconductor devicesGREBS THOMAS E·Filed 2008·Granted Mar 27, 2012·15 cites·19 claims
- 1192US7804150B2Lateral trench gate FET with direct source-drain current pathFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Sep 28, 2010·17 cites·29 claims
- 1290US11522053B2LDMOS with self-aligned body and hybrid sourceAMPLEXIA LLC·Filed 2021·Granted Dec 6, 2022·4 cites·24 claims
- 1390US8148749B2Trench-shielded semiconductor deviceGREBS THOMAS E·Filed 2009·Granted Apr 3, 2012·21 cites·34 claims
- 1490US6818947B2Buried gate-field termination structureFAIRCHILD SEMICONDUCTOR·Filed 2002·Granted Nov 16, 2004·63 cites·10 claims
- 1589US9947787B2Devices and methods for a power transistor having a schottky or schottky-like contactSILICET LLC·Filed 2017·Granted Apr 17, 2018·8 cites·5 claims
- 1688US10510869B2Devices and methods for a power transistor having a Schottky or Schottky-like contactSILICET LLC·Filed 2018·Granted Dec 17, 2019·7 cites·17 claims
- 1788US6638826B2Power MOS device with buried gateFAIRCHILD SEMICONDUCTOR·Filed 2002·Granted Oct 28, 2003·43 cites·17 claims
- 1887US7732876B2Power transistor with trench sinker for contacting the backsideFAIRCHILD SEMICONDUCTOR·Filed 2008·Granted Jun 8, 2010·7 cites·20 claims
- 1987US5932892AHigh-voltage transistorSARNOFF CORP·Filed 1997·Granted Aug 3, 1999·69 cites·6 claims
- 2086US8884365B2Trench-gate field effect transistorFAIRCHILD SEMICONDUCTOR·Filed 2013·Granted Nov 11, 2014·4 cites·20 claims
- 2185US5587329AMethod for fabricating a switching transistor having a capacitive network proximate a drift regionSARNOFF DAVID RES CENTER·Filed 1994·Granted Dec 24, 1996·76 cites·4 claims
- 2284US6445035B1Power MOS device with buried gate and grooveFAIRCHILD SEMICONDUCTOR·Filed 2000·Granted Sep 3, 2002·32 cites·14 claims
- 2382US7755137B2Bandgap engineered MOS-gated power transistorsFAIRCHILD SEMICONDUCTOR·Filed 2005·Granted Jul 13, 2010·8 cites·20 claims
- 2482US6635535B2Dense trench MOSFET with decreased etch sensitivity to deposition and etch processingFAIRCHILD SEMICONDUCTOR·Filed 2001·Granted Oct 21, 2003·28 cites·3 claims
- 2580US8872278B2Integrated gate runner and field implant termination for trench devicesHAO JIFA·Filed 2011·Granted Oct 28, 2014·9 cites·18 claims
- 2678US8441069B2Structure and method for forming trench-gate field effect transistor with source plugYILMAZ HAMZA·Filed 2011·Granted May 14, 2013·2 cites·20 claims
- 2777US8148233B2Semiconductor power device having a top-side drain using a sinker trenchGREBS THOMAS E·Filed 2011·Granted Apr 3, 2012·2 cites·14 claims
- 2875US6831329B2Quick punch through IGBT having gate-controllable DI/DT and reduced EMI during inductive turn offFAIRCHILD SEMICONDUCTOR·Filed 2002·Granted Dec 14, 2004·21 cites·26 claims
- 2973US7436021B2Dense trench MOSFET with decreased etch sensitivity to deposition and etch processingFAIRCHILD SEMICONDUCTOR·Filed 2003·Granted Oct 14, 2008·16 cites·7 claims
- 3071US11646371B2MOSFET transistors with hybrid contactAMPLEXIA LLC·Filed 2022·Granted May 9, 2023·0 cites·23 claims
- 3171US8076722B2PN junction and MOS capacitor hybrid resurf transistorLEIBIGER STEVEN·Filed 2010·Granted Dec 13, 2011·3 cites·10 claims
- 3260US12113106B2LDMOS with self-aligned body and hybrid sourceAMPLEXIA LLC·Filed 2022·Granted Oct 8, 2024·0 cites·6 claims
- 3359US2009230465A1Trench-Gate Field Effect Transistors and Methods of Forming the SameYILMAZ HAMZA·Filed 2009·Application pending·0 cites
- 3456US8129778B2Semiconductor devices and methods for making the sameKIM SUKU·Filed 2009·Granted Mar 6, 2012·1 cites·20 claims
- 3556US8039897B2Lateral MOSFET with substrate drain connectionFAIRCHILD SEMICONDUCTOR·Filed 2008·Granted Oct 18, 2011·0 cites·21 claims
- 3656US5736752AActive matrix electroluminescent display pixel element having a field shield means between the pixel and the switchSARNOFF DAVID RES CENTER·Filed 1996·Granted Apr 7, 1998·16 cites·15 claims
- 3755US2012153384A1Semiconductor Power Device Having A Top-side Drain Using A Sinker TrenchGREBS THOMAS E·Filed 2012·Application pending·0 cites
- 3851US8124981B2Rugged semiconductor device architectureREXER CHRISTOPHER L·Filed 2008·Granted Feb 28, 2012·2 cites·24 claims
- 3949US2012018803A1Lateral drain mosfet with substrate drain connectionGREBS THOMAS E·Filed 2011·Application pending·0 cites
- 4047US7795671B2PN junction and MOS capacitor hybrid RESURF transistorFAIRCHILD SEMICONDUCTOR·Filed 2007·Granted Sep 14, 2010·0 cites·24 claims
- 4143US8097510B2Method of forming lateral trench gate FET with direct source-drain current pathJEON CHANG-KI·Filed 2010·Granted Jan 17, 2012·0 cites·15 claims
- 4241US4700460AMethod for fabricating bidirectional vertical power MOS deviceRCA CORP·Filed 1986·Granted Oct 20, 1987·8 cites·7 claims
- 4339US4641164ABidirectional vertical power MOS device and fabrication methodRCA CORP·Filed 1986·Granted Feb 3, 1987·9 cites·3 claims
- 4433US4998156AStructure for a complementary-symmetry COMFET pairGEN ELECTRIC·Filed 1988·Granted Mar 5, 1991·3 cites·4 claims
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