Inventor · disambiguated record
Paul Brabant
Also filed as: BRABANT PAUL · BRABANT PAUL D · BRABANT PAUL DAVID
19 granted patents·7 pending applications·471 citations·filing 2002–2015
96Inventor score
Top patents by PatentIndex Score
26 records- 0196US7816236B2Selective deposition of silicon-containing filmsASM INC·Filed 2006·Granted Oct 19, 2010·42 cites·34 claims
- 0295US7648579B2Substrate support system for reduced autodoping and backside depositionASM INC·Filed 2005·Granted Jan 19, 2010·42 cites·30 claims
- 0395US7462239B2Low temperature load and bakeASM INC·Filed 2006·Granted Dec 9, 2008·50 cites·53 claims
- 0494US7402504B2Epitaxial semiconductor deposition methods and structuresASM INC·Filed 2006·Granted Jul 22, 2008·21 cites·23 claims
- 0593US7682947B2Epitaxial semiconductor deposition methods and structuresASM INC·Filed 2007·Granted Mar 23, 2010·21 cites·34 claims
- 0693US7479443B2Germanium depositionASM INC·Filed 2007·Granted Jan 20, 2009·16 cites·15 claims
- 0792US7238595B2Epitaxial semiconductor deposition methods and structuresASM INC·Filed 2004·Granted Jul 3, 2007·47 cites·29 claims
- 0892US6998305B2Enhanced selectivity for epitaxial depositionASM INC·Filed 2004·Granted Feb 14, 2006·68 cites·40 claims
- 0991US7901968B2Heteroepitaxial deposition over an oxidized surfaceASM INC·Filed 2006·Granted Mar 8, 2011·16 cites·16 claims
- 1089US7329593B2Germanium depositionASM INC·Filed 2005·Granted Feb 12, 2008·31 cites·59 claims
- 1187US7029995B2Methods for depositing amorphous materials and using them as templates for epitaxial films by solid phase epitaxyASM INC·Filed 2004·Granted Apr 18, 2006·39 cites·36 claims
- 1286US8088225B2Substrate support system for reduced autodoping and backside depositionGOODMAN MATT G·Filed 2009·Granted Jan 3, 2012·17 cites·13 claims
- 1385US7108748B2Low temperature load and bakeASM INC·Filed 2002·Granted Sep 19, 2006·31 cites·4 claims
- 1482US7115521B2Epitaxial semiconductor deposition methods and structuresASM INC·Filed 2004·Granted Oct 3, 2006·20 cites·18 claims
- 1576US8759200B2Methods and apparatus for selective epitaxy of Si-containing materials and substitutionally doped crystalline Si-containing materialFRANCIS TERRY ARTHUR·Filed 2011·Granted Jun 24, 2014·5 cites·18 claims
- 1675US7837795B2Low temperature load and bakeASM INC·Filed 2006·Granted Nov 23, 2010·4 cites·23 claims
- 1757US8642454B2Low temperature selective epitaxy of silicon germanium alloys employing cyclic deposit and etchBRABANT PAUL D·Filed 2012·Granted Feb 4, 2014·1 cites·25 claims
- 1854US8530340B2Epitaxial semiconductor deposition methods and structuresBRABANT PAUL D·Filed 2009·Granted Sep 10, 2013·0 cites·15 claims
- 1948US2013040440A1EPITAXIAL PROCESS WITH SURFACE CLEANING FIRST USING HCl/GeH4/H2SiCl2IBM·Filed 2012·Application pending·0 cites
- 2046US2013040438A1EPITAXIAL PROCESS WITH SURFACE CLEANING FIRST USING HCl/GeH4/H2SiCl2IBM·Filed 2011·Application pending·0 cites
- 2145US9218962B2Low temperature epitaxy of a semiconductor alloy including silicon and germanium employing a high order silane precursorGLOBALFOUNDRIES INC·Filed 2013·Granted Dec 22, 2015·0 cites·19 claims
- 2242US2008081112A1Batch reaction chamber employing separate zones for radiant heating and resistive heatingBRABANT PAUL·Filed 2006·Application pending·0 cites
- 2338US2006211248A1Purifier for chemical reactorBRABANT PAUL D·Filed 2006·Application pending·0 cites
- 2435US2014120678A1Methods for Selective and Conformal Epitaxy of Highly Doped Si-containing Materials for Three Dimensional StructuresSHINRIKI MANABU·Filed 2013·Application pending·0 cites
- 2533US2017194138A1Low temperature selective deposition employing a germanium-containing gas assisted etchIBM·Filed 2015·Application pending·0 cites
- 2631US2012024223A1Thin films and methods of making them using cyclohexasilaneTORRES JR ROBERT·Filed 2011·Application pending·0 cites
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