Inventor · disambiguated record
Chantal Arena
Also filed as: ARENA CHANTAL · ARENA CHANTAL J
75 granted patents·25 pending applications·1,205 citations·filing 1992–2023
99Inventor score
Files withSOITEC SILICON ON INSULATOR33ARENA CHANTAL31ASM INC16LAWRENCE SEMICONDUCTOR RES LABORATORY INC4BERTRAM JR RONALD THOMAS3
Top patents by PatentIndex Score
100 records- 0196US8471243B1Photoactive devices with improved distribution of charge carriers, and methods of forming sameARENA CHANTAL·Filed 2012·Granted Jun 25, 2013·16 cites·49 claims
- 0296US8436363B2Metallic carrier for layer transfer and methods for forming the sameWERKHOVEN CHRISTIAAN J·Filed 2011·Granted May 7, 2013·31 cites·37 claims
- 0396US7816236B2Selective deposition of silicon-containing filmsASM INC·Filed 2006·Granted Oct 19, 2010·42 cites·34 claims
- 0495US5232508AGaseous phase chemical treatment reactorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1992·Granted Aug 3, 1993·461 cites·19 claims
- 0594US7402504B2Epitaxial semiconductor deposition methods and structuresASM INC·Filed 2006·Granted Jul 22, 2008·21 cites·23 claims
- 0693US7785995B2Semiconductor buffer structuresASM INC·Filed 2006·Granted Aug 31, 2010·16 cites·33 claims
- 0793US7682947B2Epitaxial semiconductor deposition methods and structuresASM INC·Filed 2007·Granted Mar 23, 2010·21 cites·34 claims
- 0892US10014429B2Semiconductor structures including bonding layers, multi-junction photovoltaic cells and related methodsSOITEC SILICON ON INSULATOR·Filed 2015·Granted Jul 3, 2018·13 cites·11 claims
- 0992US8323407B2Gallium trichloride injection schemeARENA CHANTAL·Filed 2011·Granted Dec 4, 2012·10 cites·17 claims
- 1092US7732306B2Methods for producing improved epitaxial materialsSOITEC SILICON ON INSULATOR·Filed 2008·Granted Jun 8, 2010·25 cites·23 claims
- 1192US7238595B2Epitaxial semiconductor deposition methods and structuresASM INC·Filed 2004·Granted Jul 3, 2007·47 cites·29 claims
- 1292US6998305B2Enhanced selectivity for epitaxial depositionASM INC·Filed 2004·Granted Feb 14, 2006·68 cites·40 claims
- 1391US8382898B2Methods for high volume manufacture of group III-V semiconductor materialsSOITEC SILICON ON INSULATOR·Filed 2007·Granted Feb 26, 2013·10 cites·24 claims
- 1490US9038565B2Abatement of reaction gases from gallium nitride depositionSOITEC SILICON ON INSULATOR·Filed 2013·Granted May 26, 2015·3 cites·17 claims
- 1589US8585820B2Abatement of reaction gases from gallium nitride depositionARENA CHANTAL·Filed 2007·Granted Nov 19, 2013·6 cites·22 claims
- 1689US8388755B2Thermalization of gaseous precursors in CVD reactorsARENA CHANTAL·Filed 2008·Granted Mar 5, 2013·13 cites·23 claims
- 1789US8197597B2Gallium trichloride injection schemeARENA CHANTAL·Filed 2007·Granted Jun 12, 2012·12 cites·20 claims
- 1889US7902045B2Process for fabricating a structure for epitaxy without an exclusion zoneSOITEC SILICON ON INSULATOR·Filed 2008·Granted Mar 8, 2011·14 cites·16 claims
- 1988US8367520B2Methods and structures for altering strain in III-nitride materialsSOITEC SILICON ON INSULATOR·Filed 2009·Granted Feb 5, 2013·12 cites·16 claims
- 2088US5635093AHeating plate for heating an object placed on its surface and chemical treatment reactor equipped with said plateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1996·Granted Jun 3, 1997·95 cites·9 claims
- 2187US8642995B2Photoactive devices with improved distribution of charge carriers, and methods of forming sameSOITEC SILICON ON INSULATOR·Filed 2013·Granted Feb 4, 2014·4 cites·20 claims
- 2287US8329565B2Methods for improving the quality of structures comprising semiconductor materialsARENA CHANTAL·Filed 2011·Granted Dec 11, 2012·9 cites·23 claims
- 2386US7396415B2Apparatus and methods for isolating chemical vapor reactions at a substrate surfaceASM INC·Filed 2005·Granted Jul 8, 2008·12 cites·17 claims
- 2485US9412580B2Methods for forming group III-nitride materials and structures formed by such methodsARENA CHANTAL·Filed 2011·Granted Aug 9, 2016·7 cites·15 claims
- 2584US8574968B2Epitaxial methods and templates grown by the methodsARENA CHANTAL·Filed 2008·Granted Nov 5, 2013·12 cites·19 claims
- 2684US8154022B2Process for fabricating a structure for epitaxy without an exclusion zoneARENA CHANTAL·Filed 2010·Granted Apr 10, 2012·6 cites·12 claims
- 2784US7022593B2SiGe rectification processASM INC·Filed 2004·Granted Apr 4, 2006·29 cites·25 claims
- 2883US9048169B2Formation of substantially pit free indium gallium nitrideARENA CHANTAL·Filed 2009·Granted Jun 2, 2015·8 cites·10 claims
- 2983US8178427B2Epitaxial methods for reducing surface dislocation density in semiconductor materialsARENA CHANTAL·Filed 2010·Granted May 15, 2012·5 cites·20 claims
- 3082US8247314B2Methods for improving the quality of structures comprising semiconductor materialsARENA CHANTAL·Filed 2009·Granted Aug 21, 2012·7 cites·7 claims
- 3182US7115521B2Epitaxial semiconductor deposition methods and structuresASM INC·Filed 2004·Granted Oct 3, 2006·20 cites·18 claims
- 3280US9246057B2Semiconductor structures having active regions comprising InGaN, methods of forming such semiconductor structures, and light emitting devices formed from such semiconductor structuresSOITEC SILICON ON INSULATOR·Filed 2014·Granted Jan 26, 2016·5 cites·20 claims
- 3379US9343626B2Semiconductor structures having active regions comprising InGaN, methods of forming such semiconductor structures, and light emitting devices formed from such semiconductor structuresSOITEC SILICON ON INSULATOR·Filed 2014·Granted May 17, 2016·4 cites·13 claims
- 3479US8887650B2Temperature-controlled purge gate valve for chemical vapor deposition chamberSOITEC SILICON ON INSULATOR·Filed 2013·Granted Nov 18, 2014·3 cites·19 claims
- 3578US9481944B2Gas injectors including a funnel- or wedge-shaped channel for chemical vapor deposition (CVD) systems and CVD systems with the sameSOITEC SILICON ON INSULATOR·Filed 2013·Granted Nov 1, 2016·1 cites·9 claims
- 3678US8431419B2UV absorption based monitor and control of chloride gas streamBERTRAM JR RONALD THOMAS·Filed 2009·Granted Apr 30, 2013·3 cites·15 claims
- 3777US9324911B2Methods of fabricating dilute nitride semiconductor materials for use in photoactive devices and related structuresSOITEC SILICON ON INSULATOR·Filed 2012·Granted Apr 26, 2016·4 cites·29 claims
- 3876US9117955B2Semiconductor structures having active regions comprising ingan, methods of forming such semiconductor structures, and light emitting devices formed from such semiconductor structuresSOITEC SILICON ON INSULATOR·Filed 2014·Granted Aug 25, 2015·3 cites·19 claims
- 3976US7452757B2Silicon-on-insulator structures and methodsASM INC·Filed 2003·Granted Nov 18, 2008·17 cites·12 claims
- 4075US8377802B2III-V semiconductor structures and methods for forming the sameSOITEC SILICON ON INSULATOR·Filed 2011·Granted Feb 19, 2013·3 cites·13 claims
- 4174US9023721B2Methods of forming bulk III-nitride materials on metal-nitride growth template layers, and structures formed by such methodsARENA CHANTAL·Filed 2011·Granted May 5, 2015·3 cites·12 claims
- 4273US7666799B2Epitaxial growth of relaxed silicon germanium layersASM INC·Filed 2009·Granted Feb 23, 2010·3 cites·12 claims
- 4372US8741385B2Thermalization of gaseous precursors in CVD reactorsSOITEC SILICON ON INSULATOR·Filed 2013·Granted Jun 3, 2014·2 cites·18 claims
- 4472US8278193B2Methods of forming layers of semiconductor material having reduced lattice strain, semiconductor structures, devices and engineered substrates including sameARENA CHANTAL·Filed 2009·Granted Oct 2, 2012·3 cites·41 claims
- 4571US8236593B2Methods for improving the quality of epitaxially-grown semiconductor materialsARENA CHANTAL·Filed 2008·Granted Aug 7, 2012·4 cites·16 claims
- 4670US9580836B2Equipment for high volume manufacture of group III-V semiconductor materialsARENA CHANTAL·Filed 2007·Granted Feb 28, 2017·1 cites·19 claims
- 4770US8318612B2Methods for improving the quality of group III-nitride materials and structures produced by the methodsARENA CHANTAL·Filed 2008·Granted Nov 27, 2012·3 cites·17 claims
- 4868US8765508B2Methods of fabricating semiconductor structures or devices using layers of semiconductor material having selected or controlled lattice parametersARENA CHANTAL·Filed 2009·Granted Jul 1, 2014·3 cites·12 claims
- 4968US8692260B2Method of forming a composite laser substrateARENA CHANTAL·Filed 2009·Granted Apr 8, 2014·2 cites·13 claims
- 5068US7514372B2Epitaxial growth of relaxed silicon germanium layersASM INC·Filed 2004·Granted Apr 7, 2009·9 cites·46 claims
Showing the top 50 of 100 patent records by PatentIndex Score.
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