Inventor · disambiguated record
Takyiu Liu
Also filed as: LIU TAKYIU
8 granted patents·1 pending application·243 citations·filing 1994–2019
89Inventor score
Top patents by PatentIndex Score
9 records- 0192US5663583ALow-noise and power ALGaPSb/GaInAs HEMTs and pseudomorpohic HEMTs on GaAs substrateHUGHES AIRCRAFT CO·Filed 1995·Granted Sep 2, 1997·128 cites·32 claims
- 0276US5548140AHigh-Speed, low-noise millimeterwave hemt and pseudomorphic hemtHUGHES AIRCRAFT CO·Filed 1995·Granted Aug 20, 1996·35 cites·9 claims
- 0367US5606185AParabolically graded base-collector double heterojunction bipolar transistorHUGHES AIRCRAFT CO·Filed 1994·Granted Feb 25, 1997·28 cites·19 claims
- 0450US5603765AMethod of growing high breakdown voltage allnas layers in InP devices by low temperature molecular beam epitaxyHUGHES AIRCRAFT CO·Filed 1995·Granted Feb 18, 1997·17 cites·20 claims
- 0548US5721161AMethod of making high-speed, low-noise millimeterwave HEMT and pseudormorphic HEMTHUGHES AIRCRAFT CO·Filed 1995·Granted Feb 24, 1998·10 cites·15 claims
- 0646US2020340775A1Electromagnetic Coil-gun Launch SystemsZHOU JOSHUA Z·Filed 2019·Application pending·0 cites
- 0743US5612551AAlPSb/InP single heterojunction bipolar transistor on InP substrate for high-speed, high-power applicationsHUGHES AIRCRAFT CO·Filed 1996·Granted Mar 18, 1997·9 cites·8 claims
- 0839US5753545AEffective constant doping in a graded compositional alloyHUGHES ELECTRONICS CORP·Filed 1994·Granted May 19, 1998·11 cites·24 claims
- 0936US5610086AMethod of making an AlPSb/InP single heterojunction bipolar transistor on InP substrate for high-speed, high-power applicationsHUGHES AIRCRAFT CO·Filed 1995·Granted Mar 11, 1997·5 cites·12 claims
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