Inventor · disambiguated record
Seiko Yoshida
Also filed as: YOSHIDA SEIKO
7 granted patents·448 citations·filing 1994–1998
88Inventor score
Top patents by PatentIndex Score
7 records- 0195US5763315AShallow trench isolation with oxide-nitride/oxynitride linerIBM·Filed 1997·Granted Jun 9, 1998·199 cites·9 claims
- 0294US6046487AShallow trench isolation with oxide-nitride/oxynitride linerIBM·Filed 1997·Granted Apr 4, 2000·169 cites·4 claims
- 0370US6333274B2Method of manufacturing a semiconductor device including a seamless shallow trench isolation stepTOSHIBA KK·Filed 1998·Granted Dec 25, 2001·39 cites·4 claims
- 0446US6051885ASemiconductor device having a conductor with a wedge shaped depressionTOSHIBA KK·Filed 1998·Granted Apr 18, 2000·14 cites·12 claims
- 0546US5719072AMethod of manufacturing a semiconductor using multi-layer antireflective layerTOSHIBA KK·Filed 1995·Granted Feb 17, 1998·12 cites·22 claims
- 0643US5486719ASemiconductor device including insulating film arrangement having low reflectanceTOSHIBA KK·Filed 1994·Granted Jan 23, 1996·11 cites·9 claims
- 0736US5885863AMethod of making a contact for contacting an impurity region formed in a semiconductor substrateTOSHIBA KK·Filed 1997·Granted Mar 23, 1999·4 cites·8 claims
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