Inventor · disambiguated record
Chi-Cherng Jeng
Also filed as: JENG CHI-CHERNG
117 granted patents·6 pending applications·276 citations·filing 2002–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD100TAIWAN SEMICONDUCTOR MFG17TAIWAN SEMICONDUCTOR MANFACTURING COMPANY LTD2IND TECH RES INST1JANGJIAN SHIU-KO1
Top patents by PatentIndex Score
123 records- 0197US9130072B1Backside illuminated image sensor and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Sep 8, 2015·27 cites·20 claims
- 0295US9337192B2Metal gate stack having TaAlCN layerTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted May 10, 2016·13 cites·18 claims
- 0393US10276620B2Image sensor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 30, 2019·9 cites·20 claims
- 0493US9024369B2Metal shield structure and methods for BSI image sensorsTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted May 5, 2015·8 cites·20 claims
- 0592US10014224B2Structure and formation method of fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 3, 2018·5 cites·20 claims
- 0691US9490365B2Structure and formation method of fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 8, 2016·7 cites·20 claims
- 0791US9293490B2Deep trench isolation with air-gap in backside illumination image sensor chipsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 22, 2016·9 cites·20 claims
- 0890US10340192B2FinFET gate structure and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 2, 2019·5 cites·20 claims
- 0989US10777592B2Image sensor and method for manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 15, 2020·2 cites·20 claims
- 1089US9502538B2Structure and formation method of fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 22, 2016·8 cites·20 claims
- 1189US9130077B2Structure of dielectric grid with a metal pillar for semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 8, 2015·6 cites·20 claims
- 1288US9419048B2Method of manufracturing structure of dielectric grid for a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 16, 2016·2 cites·20 claims
- 1388US9123839B2Image sensor with stacked grid structureTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 1, 2015·8 cites·20 claims
- 1488US8816415B2Photodiode with concave reflectorTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 26, 2014·4 cites·12 claims
- 1588US2024363439A1Structure and formation method of fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1687US9824929B2FinFET gate structure and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 21, 2017·4 cites·20 claims
- 1787US9721883B1Integrated circuit and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 1, 2017·6 cites·18 claims
- 1886US9627426B2Image sensor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 18, 2017·6 cites·20 claims
- 1986US9324752B2Image sensor device with light blocking structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 26, 2016·4 cites·20 claims
- 2085US9768221B2Pad structure layout for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Sep 19, 2017·8 cites·19 claims
- 2185US9397129B2Dielectric film for image sensorTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jul 19, 2016·3 cites·20 claims
- 2284US12288798B2Backside illuminated image sensor device with shielding layer and forming methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 29, 2025·0 cites·20 claims
- 2384US9773911B2Fin field effect transistor and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 26, 2017·3 cites·15 claims
- 2484US9640456B2Support structure for integrated circuitryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted May 2, 2017·5 cites·20 claims
- 2584US6830981B2Vertical nanotube transistor and process for fabricating the sameIND TECH RES INST·Filed 2002·Granted Dec 14, 2004·43 cites·14 claims
- 2684US2024297079A1Semiconductor device having planar transistor and finfetTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2783US10056426B2Apparatus and method for fabricating a light guiding gridTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 21, 2018·5 cites·20 claims
- 2883US9548329B2Backside illuminated image sensor and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 17, 2017·6 cites·20 claims
- 2983US9337303B2Metal gate stack having TiAICN as work function layer and/or blocking/wetting layerTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted May 10, 2016·6 cites·20 claims
- 3082US9060144B2Image sensor and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 16, 2015·4 cites·10 claims
- 3181US12087643B2Structure and formation method of fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 10, 2024·0 cites·20 claims
- 3281US9698214B1Capacitor structure of integrated circuit chip and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 4, 2017·4 cites·20 claims
- 3381US2025261458A1Backside illuminated image sensor device with shielding layer and forming methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3480US9224781B2Structure of dielectric grid for a semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 29, 2015·1 cites·19 claims
- 3580US2023246047A1Image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3679US11309423B2Fin field effect transistor (finFET) device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 19, 2022·2 cites·20 claims
- 3779US10340301B2Support structure for integrated circuitryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 2, 2019·2 cites·20 claims
- 3879US9842932B1FinFET with P/N stacked fins and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 12, 2017·2 cites·20 claims
- 3979US9591242B2Black level control for image sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Mar 7, 2017·3 cites·20 claims
- 4079US9558955B2Formation method of semiconductor device that includes performing hydrogen-containing plasma treatment on metal gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 31, 2017·3 cites·20 claims
- 4178US12009262B2Semiconductor device having planar transistor and FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 11, 2024·0 cites·20 claims
- 4278US11810939B2Method of forming backside illuminated image sensor device with shielding layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 7, 2023·0 cites·20 claims
- 4378US10276720B2Method for forming fin field effect transistor (FINFET) device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·2 cites·20 claims
- 4478US10037921B2Structure and formation method of fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 31, 2018·2 cites·20 claims
- 4578US9985122B2Semiconductor structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 29, 2018·2 cites·20 claims
- 4678US9978790B2Image sensor and method for manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted May 22, 2018·2 cites·20 claims
- 4778US9478660B2Protection layer on fin of fin field effect transistor (FinFET) device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 25, 2016·2 cites·18 claims
- 4877US9490346B2Structure and formation method of fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 8, 2016·4 cites·20 claims
- 4977US8610230B1HfO2/SiO2-Si interface improvement for CMOS image sensorTAIWAN SEMICONDUCTOR MANFACTURING COMPANY LTD·Filed 2012·Granted Dec 17, 2013·2 cites·20 claims
- 5075US11227886B2Mechanisms for forming image sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 18, 2022·0 cites·20 claims
Showing the top 50 of 123 patent records by PatentIndex Score.
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