Inventor · disambiguated record
Jung Sunwoo
Also filed as: SUNWOO JUNG
14 granted patents·27 citations·filing 2004–2020
87Inventor score
Top patents by PatentIndex Score
14 records- 0185US9928140B2Non-volatile memory device and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Mar 27, 2018·5 cites·20 claims
- 0284US11636895B2Non-volatile resistive memory device including a plurality of write modesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Apr 25, 2023·2 cites·20 claims
- 0378US9405615B2Method of operating nonvolatile memory device comprising resistance materialSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Aug 2, 2016·6 cites·17 claims
- 0470US10074426B2Memory device having resistance change material and operating method for the memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 11, 2018·1 cites·20 claims
- 0563US7245140B2Parameter measurement of semiconductor device from pin with on die termination circuitSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 17, 2007·7 cites·18 claims
- 0655US7936615B2Methods for supplying power supply voltages in semiconductor memory devices and semiconductor memory devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted May 3, 2011·3 cites·20 claims
- 0755US7844773B2Refresh circuit and refresh method in semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 30, 2010·3 cites·16 claims
- 0848US10409515B2Nonvolatile memory device for performing at least one of randomization operation and error correction operationSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 10, 2019·0 cites·19 claims
- 0941US8576644B2Memory devices having controllers that divide command signals into two signals and systems including such memory devicesJEON SEONG HYUN·Filed 2012·Granted Nov 5, 2013·0 cites·23 claims
- 1040US10580488B2Memory device for generating a compensation current based on a difference between a first read voltage and a second read voltage and a method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Mar 3, 2020·0 cites·20 claims
- 1140US10340000B2Operating method of memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jul 2, 2019·0 cites·15 claims
- 1239US11238927B2Memory device having program current adjustible based on detected holding voltageSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Feb 1, 2022·0 cites·20 claims
- 1338US10706920B2Memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jul 7, 2020·0 cites·19 claims
- 1438US7659785B2Voltage controlled oscillator and PLL having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 9, 2010·0 cites·6 claims
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