Inventor · disambiguated record
Pascal Fonteneau
Also filed as: FONTENEAU PASCAL
22 granted patents·5 pending applications·35 citations·filing 2013–2025
92Inventor score
Files withST MICROELECTRONICS SA9ST MICROELECTRONICS CROLLES 2 SAS8COMMISSARIAT L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES5COMMISSARIAT ENERGIE ATOMIQUE2ST MICROELECTRONICS INT NV2
Top patents by PatentIndex Score
27 records- 0188US9905565B1Memory cellST MICROELECTRONICS SA·Filed 2017·Granted Feb 27, 2018·7 cites·21 claims
- 0285US11398521B2Back-side illuminated image sensorST MICROELECTRONICS CROLLES 2 SAS·Filed 2020·Granted Jul 26, 2022·2 cites·20 claims
- 0384US2025344531A1Photodiode comprising a memory areaST MICROELECTRONICS CROLLES 2 SAS·Filed 2025·Application pending·0 cites
- 0483US11031433B2Back-side illuminated image sensorST MICROELECTRONICS CROLLES 2 SAS·Filed 2019·Granted Jun 8, 2021·3 cites·20 claims
- 0583US10978487B2Inverting circuitST MICROELECTRONICS CROLLES 2 SAS·Filed 2019·Granted Apr 13, 2021·4 cites·26 claims
- 0677US9666577B2On-SOI integrated circuit equipped with a device for protecting against electrostatic dischargesCOMMISSARIAT L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES·Filed 2014·Granted May 30, 2017·3 cites·16 claims
- 0777US9209211B2Vertical gate transistor and pixel structure comprising such a transistorST MICROELECTRONICS SA·Filed 2015·Granted Dec 8, 2015·3 cites·17 claims
- 0875US9165943B2ON-SOI integrated circuit comprising a thyristor (SCR) for protection against electrostatic dischargesCOMMISSARIAT L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES·Filed 2013·Granted Oct 20, 2015·4 cites·14 claims
- 0971US9012955B2MOS transistor on SOI protected against overvoltagesST MICROELECTRONICS SA·Filed 2013·Granted Apr 21, 2015·3 cites·10 claims
- 1070US12199131B2Back-side illuminated image sensorST MICROELECTRONICS CROLLES 2 SAS·Filed 2022·Granted Jan 14, 2025·0 cites·17 claims
- 1170US9337302B2On-SOI integrated circuit comprising a subjacent protection transistorCommissariat à l'énergie atomique et aux énergies alternatives·Filed 2013·Granted May 10, 2016·3 cites·12 claims
- 1265US11610933B2Back-side illuminated image sensorST MICROELECTRONICS CROLLES 2 SAS·Filed 2021·Granted Mar 21, 2023·0 cites·18 claims
- 1364US9354391B2Overvoltage protection component and an assembly of integrated circuit chips having said overvoltage protection componentST MICROELECTRONICS SA·Filed 2014·Granted May 31, 2016·1 cites·26 claims
- 1463US9478570B2Vertical gate transistor and pixel structure comprising such a transistorST MICROELECTRONICS SA·Filed 2015·Granted Oct 25, 2016·1 cites·15 claims
- 1559US9391057B2Integrated circuit on SOI comprising a transistor protecting from electrostatic dischargesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2014·Granted Jul 12, 2016·1 cites·8 claims
- 1654US2023317744A1Photodiode and fabrication method of a photodiodeST MICROELECTRONICS CROLLES 2 SAS·Filed 2023·Application pending·0 cites
- 1754US2025176285A1Light detecting pixel using vertical gates and planar gatesST MICROELECTRONICS INT NV·Filed 2023·Application pending·0 cites
- 1851US10312240B2Memory cellST MICROELECTRONICS SA·Filed 2018·Granted Jun 4, 2019·0 cites·25 claims
- 1951US9530922B2Overvoltage protection components in an optoelectronic circuit on SOIST MICROELECTRONICS SA·Filed 2014·Granted Dec 27, 2016·0 cites·27 claims
- 2049US9453977B2Assembly of integrated circuit chips having an overvoltage protection componentST MICROELECTRONICS SA·Filed 2016·Granted Sep 27, 2016·0 cites·13 claims
- 2148US10062681B2SOI integrated circuit equipped with a device for protecting against electrostatic dischargesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted Aug 28, 2018·0 cites·18 claims
- 2248US2025185405A1Light detecting pixel using vertical gatesST MICROELECTRONICS INT NV·Filed 2023·Application pending·0 cites
- 2345US9018729B2Adjustable avalanche diode in an integrated circuitST MICROELECTRONICS SA·Filed 2013·Granted Apr 28, 2015·0 cites·3 claims
- 2443US9165908B2On-SOI integrated circuit comprising a triac for protection against electrostatic dischargesCOMMISSARIAT L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES·Filed 2013·Granted Oct 20, 2015·0 cites·14 claims
- 2542US9029955B2Integrated circuit on SOI comprising a bipolar transistor with isolating trenches of distinct depthsCOMMISSARIAT L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES·Filed 2013·Granted May 12, 2015·0 cites·11 claims
- 2642US2019341478A1Z2-fet structureST MICROELECTRONICS CROLLES 2 SAS·Filed 2019·Application pending·0 cites
- 2737US9653476B2On-SOI integrated circuit comprising a lateral diode for protection against electrostatic dischargesCOMMISSARIAT L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES·Filed 2013·Granted May 16, 2017·0 cites·17 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →