Inventor · disambiguated record
Chun Che Lin
Also filed as: LIN CHUN-CHE
48 granted patents·10 pending applications·180 citations·filing 2001–2025
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD39LEXTAR ELECTRONICS CORP3TAIWAN SEMICONDUCTOR MFG3EPISTAR CORP2CHUNG SHAN INST OF SCIENCE1
Top patents by PatentIndex Score
58 records- 0198US9876114B2Structure and method for 3D FinFET metal gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 23, 2018·61 cites·20 claims
- 0296US10367021B2Image sensor device and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jul 30, 2019·12 cites·20 claims
- 0396US9437484B2Etch stop layer in integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 6, 2016·28 cites·20 claims
- 0494US10998415B2Metal gate scheme for device and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 4, 2021·7 cites·20 claims
- 0594US9691766B1Fin field effect transistor and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 27, 2017·16 cites·13 claims
- 0693US10090242B2Etch stop layer in integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 2, 2018·8 cites·20 claims
- 0792US8907385B2Surface treatment for BSI image sensorsTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Dec 9, 2014·7 cites·13 claims
- 0891US2025366087A1Method for manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0990US9466494B2Selective growth for high-aspect ration metal fillTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 11, 2016·8 cites·20 claims
- 1088US11522001B2Image sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 6, 2022·1 cites·20 claims
- 1184US9941376B2Metal gate scheme for device and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 10, 2018·3 cites·20 claims
- 1283US11257953B2Selective growth for high-aspect ratio metal fillTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 22, 2022·2 cites·20 claims
- 1382US12272708B2Image sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 8, 2025·0 cites·20 claims
- 1482US10658252B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 19, 2020·2 cites·20 claims
- 1582US10269664B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·2 cites·20 claims
- 1682US8815630B1Back side illumination (BSI) sensors, manufacturing methods thereof, and semiconductor device manufacturing methodsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 26, 2014·5 cites·20 claims
- 1781US9871100B2Trench structure of semiconductor device having uneven nitrogen distribution linerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 16, 2018·2 cites·20 claims
- 1881US9722076B2Method for manufacturing semiconductor device with contamination improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 1, 2017·3 cites·18 claims
- 1978US11942419B2Etch stop layer in integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 26, 2024·0 cites·20 claims
- 2078US10631392B2EUV collector contamination preventionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 21, 2020·1 cites·20 claims
- 2178US9478660B2Protection layer on fin of fin field effect transistor (FinFET) device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 25, 2016·2 cites·18 claims
- 2277US10854713B2Method for forming trench structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 1, 2020·1 cites·20 claims
- 2377US10797176B2Selective growth for high-aspect ratio metal fillTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 6, 2020·1 cites·20 claims
- 2475US10818716B2Image sensor device and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 27, 2020·0 cites·20 claims
- 2575US10522640B2Metal gate scheme for device and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·1 cites·20 claims
- 2673US8269411B2Display device with quantum dot phosphor and manufacturing method thereofYU YI-CHENG·Filed 2010·Granted Sep 18, 2012·4 cites·21 claims
- 2772US12464786B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 4, 2025·0 cites·20 claims
- 2872US12297366B2Quantum dot oil-based ink and pattern recognition systemLEXTAR ELECTRONICS CORP·Filed 2022·Granted May 13, 2025·0 cites·16 claims
- 2972US11404368B2Etch stop layer in integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·0 cites·20 claims
- 3071US9985133B2Protection layer on fin of fin field effect transistor (FinFET) device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 29, 2018·1 cites·17 claims
- 3168US10868063B2Surface treatment for BSI image sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·0 cites·20 claims
- 3265US2025320406A1Quantum dot material, method for preparing the same, and quantum dot film and backlight module using the sameFOXCONN TECH CO LTD·Filed 2025·Application pending·0 cites
- 3363US11879084B2Phosphate phosphor, light emitting device, and detecting deviceLEXTAR ELECTRONICS CORP·Filed 2020·Granted Jan 23, 2024·0 cites·15 claims
- 3462US11219115B2EUV collector contamination preventionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 4, 2022·0 cites·20 claims
- 3561US10040994B2Phosphor, fabricating method thereof, and light-emitting device and backlight module employing the sameLEXTAR ELECTRONICS CORP·Filed 2016·Granted Aug 7, 2018·1 cites·15 claims
- 3661US2015279880A1Backside illuminated image sensor and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Application pending·0 cites
- 3760US11004973B2Semiconductor device with contamination improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 11, 2021·0 cites·20 claims
- 3860US10720386B2Etch stop layer in integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 21, 2020·0 cites·20 claims
- 3958US9978793B2Surface treatment for BSI image sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted May 22, 2018·0 cites·20 claims
- 4057US10957545B2Method for manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 23, 2021·0 cites·20 claims
- 4157US10109741B2Selective growth for high-aspect ratio metal fillTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 23, 2018·0 cites·20 claims
- 4255US10312366B2Semiconductor device with contamination improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 4, 2019·0 cites·20 claims
- 4355US9824943B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 21, 2017·0 cites·20 claims
- 4450US10861701B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 8, 2020·0 cites·20 claims
- 4549US2015232751A1Fluoride fluorescent composition and wavelength-converting device of projector using sameDELTA ELECTRONICS INC·Filed 2014·Application pending·0 cites
- 4648US8471460B1PhosphorLIN CHUN-CHE·Filed 2012·Granted Jun 25, 2013·0 cites·15 claims
- 4747US2015368556A1Method of synthesizing composite phosphor by phase transitionNAT INST CHUNG SHAN SCIENCE & TECHNOLOGY·Filed 2014·Application pending·0 cites
- 4846US9926488B2PhosphorEPISTAR CORP·Filed 2015·Granted Mar 27, 2018·0 cites·13 claims
- 4945US9484505B2LED structure applied to backlight sourceUNITY OPTO TECHNOLOGY CO LTD·Filed 2014·Granted Nov 1, 2016·0 cites·2 claims
- 5045US7538615B2Differential feedback amplifier circuit with cross coupled capacitorsNOVATEK MICROELECTRONICS CORP·Filed 2007·Granted May 26, 2009·1 cites·8 claims
Showing the top 50 of 58 patent records by PatentIndex Score.
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