Inventor · disambiguated record
Shiu-Ko Jangjian
Also filed as: JANGJIAN SHIU-KO
160 granted patents·15 pending applications·439 citations·filing 2003–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD135TAIWAN SEMICONDUCTOR MFG16JANGJIAN SHIU-KO15HSIEH PING-PANG1Hong min hao1
Top patents by PatentIndex Score
175 records- 0198US9876114B2Structure and method for 3D FinFET metal gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 23, 2018·61 cites·20 claims
- 0298US9620610B1FinFET gate structure and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 11, 2017·22 cites·19 claims
- 0397US9257476B2Grids in backside illumination image sensor chips and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Feb 9, 2016·11 cites·20 claims
- 0497US9219092B2Grids in backside illumination image sensor chips and methods for forming the sameJANGJIAN SHIU-KO·Filed 2012·Granted Dec 22, 2015·24 cites·20 claims
- 0596US10367021B2Image sensor device and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jul 30, 2019·12 cites·20 claims
- 0696US9478581B2Grids in backside illumination image sensor chips and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 25, 2016·9 cites·20 claims
- 0796US9437484B2Etch stop layer in integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 6, 2016·28 cites·20 claims
- 0895US9337192B2Metal gate stack having TaAlCN layerTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted May 10, 2016·13 cites·18 claims
- 0994US10998415B2Metal gate scheme for device and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 4, 2021·7 cites·20 claims
- 1094US9837306B2Interconnection structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 5, 2017·9 cites·20 claims
- 1194US9728646B2Flat STI surface for gate oxide uniformity in Fin FET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 8, 2017·7 cites·19 claims
- 1294US9691766B1Fin field effect transistor and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 27, 2017·16 cites·13 claims
- 1393US10090242B2Etch stop layer in integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 2, 2018·8 cites·20 claims
- 1493US10090206B2FinFET gate structure and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 2, 2018·6 cites·20 claims
- 1593US9024369B2Metal shield structure and methods for BSI image sensorsTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted May 5, 2015·8 cites·20 claims
- 1692US10014224B2Structure and formation method of fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 3, 2018·5 cites·20 claims
- 1792US8907385B2Surface treatment for BSI image sensorsTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Dec 9, 2014·7 cites·13 claims
- 1891US9490365B2Structure and formation method of fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 8, 2016·7 cites·20 claims
- 1991US9406675B1FinFET structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 2, 2016·7 cites·20 claims
- 2091US2025366087A1Method for manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2190US10340192B2FinFET gate structure and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 2, 2019·5 cites·20 claims
- 2290US10192988B2Flat STI surface for gate oxide uniformity in Fin FET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 29, 2019·4 cites·20 claims
- 2390US9466494B2Selective growth for high-aspect ration metal fillTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 11, 2016·8 cites·20 claims
- 2489US10020401B2Methods for straining a transistor gate through interlayer dielectric (ILD) doping schemesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 10, 2018·4 cites·20 claims
- 2589US9502538B2Structure and formation method of fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 22, 2016·8 cites·20 claims
- 2688US11522001B2Image sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 6, 2022·1 cites·20 claims
- 2788US10629708B2Semiconductor device structure with barrier layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 21, 2020·4 cites·20 claims
- 2888US9041140B2Grids in backside illumination image sensor chips and methods for forming the sameJANGJIAN SHIU-KO·Filed 2012·Granted May 26, 2015·4 cites·19 claims
- 2988US2024363439A1Structure and formation method of fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3087US9824929B2FinFET gate structure and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 21, 2017·4 cites·20 claims
- 3187US9721883B1Integrated circuit and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 1, 2017·6 cites·18 claims
- 3286US11929328B2Conductive contact having barrier layers with different depthsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 12, 2024·1 cites·20 claims
- 3386US11551979B2Method for manufacturing semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 10, 2023·1 cites·20 claims
- 3486US2025287637A1Flat sti surface for gate oxide uniformity in fin fet devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3585US10510588B2Interconnection structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 17, 2019·3 cites·20 claims
- 3685US9397129B2Dielectric film for image sensorTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jul 19, 2016·3 cites·20 claims
- 3785US8294202B2Metal gate structure of a semiconductor deviceJANGJIAN SHIU-KO·Filed 2010·Granted Oct 23, 2012·8 cites·21 claims
- 3884US9941376B2Metal gate scheme for device and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 10, 2018·3 cites·20 claims
- 3984US9640456B2Support structure for integrated circuitryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted May 2, 2017·5 cites·20 claims
- 4084US8890273B2Methods and apparatus for an improved reflectivity optical grid for image sensorsJANGJIAN SHIU-KO·Filed 2012·Granted Nov 18, 2014·3 cites·15 claims
- 4184US8772899B2Method and apparatus for backside illumination sensorJANGJIAN SHIU-KO·Filed 2012·Granted Jul 8, 2014·3 cites·20 claims
- 4284US2024297079A1Semiconductor device having planar transistor and finfetTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4383US11257953B2Selective growth for high-aspect ratio metal fillTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 22, 2022·2 cites·20 claims
- 4483US10886226B2Conductive contact having staircase barrier layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 5, 2021·2 cites·20 claims
- 4583US9548329B2Backside illuminated image sensor and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 17, 2017·6 cites·20 claims
- 4683US9337303B2Metal gate stack having TiAICN as work function layer and/or blocking/wetting layerTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted May 10, 2016·6 cites·20 claims
- 4783US2024379557A1Conductive contact having barrier layers with different depthsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4882US12272708B2Image sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 8, 2025·0 cites·20 claims
- 4982US10658252B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 19, 2020·2 cites·20 claims
- 5082US10269664B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·2 cites·20 claims
Showing the top 50 of 175 patent records by PatentIndex Score.
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